GB1263175A - Semiconductor controlled rectifier circuit - Google Patents

Semiconductor controlled rectifier circuit

Info

Publication number
GB1263175A
GB1263175A GB3632769A GB3632769A GB1263175A GB 1263175 A GB1263175 A GB 1263175A GB 3632769 A GB3632769 A GB 3632769A GB 3632769 A GB3632769 A GB 3632769A GB 1263175 A GB1263175 A GB 1263175A
Authority
GB
United Kingdom
Prior art keywords
gate
triggered
regenerative
division
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3632769A
Inventor
Brian Leonard William Holloway
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Brake English Electric Semi Conductors Ltd
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake English Electric Semi Conductors Ltd
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake English Electric Semi Conductors Ltd, Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake English Electric Semi Conductors Ltd
Priority to GB3632769A priority Critical patent/GB1263175A/en
Publication of GB1263175A publication Critical patent/GB1263175A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Rectifiers (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

1,263,175. S.C.R. circuits. WESTING- HOUSE BRAKE ENGLISH ELECTRIC SEMICONDUCTORS Ltd. 23 June, 1970 [18 July, 1969], No. 36327/69. Heading H3T. [Also in Division H2] One or more parallel connected S.C.R.s 20, 30 are triggered by the regenerative gate current which is produced in a regenerative gate S.C.R. 10 after it has been triggered by a circuit 11, 14, 12. A regenerative (or inverse) gate S.C.R. is triggered by making its gate more negative than its cathode, and once triggered its gate is effectively connected to the anode, thereby providing a positive potential on its gate electrode, with a very short rise time. As shown, this potential is connected through a diode 16 to trigger standard S.C.R.s 20, 30. In an alternative embodiment (Fig. 2, not shown), all the S.C.R.s are of the regenerative gate type and the gate of the first one is connected to the others via a polarity changing transformer (18). Diodes (23, 33) block the initial triggering pulse from the further S.C.R.s and further diodes (22, 32) provide a path for their respective gate currents. The first S.C.R. 10 need not be in the main current path as shown. The application is to power switching to an unspecified load 3, one arrangement switching 20,000 amps at 1000 A/ micro second. The three terminal S.C.R. 10 shown is described in Specification 1,174,899 (Division H1); alternatively a four terminal version may be used as described in Specification 1,263,174.
GB3632769A 1969-07-18 1969-07-18 Semiconductor controlled rectifier circuit Expired GB1263175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3632769A GB1263175A (en) 1969-07-18 1969-07-18 Semiconductor controlled rectifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3632769A GB1263175A (en) 1969-07-18 1969-07-18 Semiconductor controlled rectifier circuit

Publications (1)

Publication Number Publication Date
GB1263175A true GB1263175A (en) 1972-02-09

Family

ID=10387128

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3632769A Expired GB1263175A (en) 1969-07-18 1969-07-18 Semiconductor controlled rectifier circuit

Country Status (1)

Country Link
GB (1) GB1263175A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3322641A1 (en) * 1982-06-25 1984-01-05 Hitachi, Ltd., Tokyo PARALLEL SWITCHED GTO THYRISTORS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3322641A1 (en) * 1982-06-25 1984-01-05 Hitachi, Ltd., Tokyo PARALLEL SWITCHED GTO THYRISTORS

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