FI61773C - Tyristor med monolitiskt integrerad diod och foerfarande foer dess framstaellning - Google Patents
Tyristor med monolitiskt integrerad diod och foerfarande foer dess framstaellning Download PDFInfo
- Publication number
- FI61773C FI61773C FI3488/74A FI348874A FI61773C FI 61773 C FI61773 C FI 61773C FI 3488/74 A FI3488/74 A FI 3488/74A FI 348874 A FI348874 A FI 348874A FI 61773 C FI61773 C FI 61773C
- Authority
- FI
- Finland
- Prior art keywords
- layer
- diode
- thyristor
- diffusion
- base layer
- Prior art date
Links
- 230000010354 integration Effects 0.000 title 1
- 238000009792 diffusion process Methods 0.000 claims description 40
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 15
- 230000007423 decrease Effects 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- -1 phosphorus nitride Chemical class 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 230000020477 pH reduction Effects 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910005540 GaP Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000004922 lacquer Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101150074984 RFT1 gene Proteins 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
- H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2360081 | 1973-12-03 | ||
| DE19732360081 DE2360081C3 (de) | 1973-12-03 | Thyristor mit monolithisch integrierter Diode und Verfahren zu seiner Herstellung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI348874A7 FI348874A7 (enrdf_load_stackoverflow) | 1975-06-04 |
| FI61773B FI61773B (fi) | 1982-05-31 |
| FI61773C true FI61773C (fi) | 1982-09-10 |
Family
ID=5899690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI3488/74A FI61773C (fi) | 1973-12-03 | 1974-12-02 | Tyristor med monolitiskt integrerad diod och foerfarande foer dess framstaellning |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT361043B (enrdf_load_stackoverflow) |
| DK (1) | DK139798C (enrdf_load_stackoverflow) |
| FI (1) | FI61773C (enrdf_load_stackoverflow) |
| FR (1) | FR2253285B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1495295A (enrdf_load_stackoverflow) |
| IT (1) | IT1030860B (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2451106A1 (fr) * | 1979-03-09 | 1980-10-03 | Thomson Csf | Dispositif semi-conducteur de commutation a frequence elevee |
| DE3004681A1 (de) * | 1980-02-08 | 1981-08-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Integrierte schaltungsanordnung mit einer diode |
| FR2514558A1 (fr) * | 1981-10-13 | 1983-04-15 | Silicium Semiconducteur Ssc | Procede de fabrication de thyristor asymetrique a diode de conduction inverse par diffusion au phosphure de gallium |
| FR2574594B1 (fr) * | 1984-12-11 | 1987-01-16 | Silicium Semiconducteur Ssc | Structure integree de triac a commande par diac |
| GB2256743A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A semiconductor component for transient voltage limiting |
| GB2256744A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A monolithic semiconductor component for transient voltage suppression |
| JPH05152564A (ja) * | 1991-12-02 | 1993-06-18 | Mitsubishi Electric Corp | 逆導通ゲートターンオフサイリスタおよびその製造方法 |
-
1974
- 1974-11-25 DK DK611774A patent/DK139798C/da active
- 1974-12-02 AT AT962674A patent/AT361043B/de not_active IP Right Cessation
- 1974-12-02 IT IT30084/74A patent/IT1030860B/it active
- 1974-12-02 FI FI3488/74A patent/FI61773C/fi active
- 1974-12-03 FR FR7439527A patent/FR2253285B1/fr not_active Expired
- 1974-12-03 GB GB52228/74A patent/GB1495295A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AT361043B (de) | 1981-02-10 |
| FI348874A7 (enrdf_load_stackoverflow) | 1975-06-04 |
| DK139798B (da) | 1979-04-17 |
| FR2253285A1 (enrdf_load_stackoverflow) | 1975-06-27 |
| IT1030860B (it) | 1979-04-10 |
| DE2360081B2 (de) | 1977-04-28 |
| FI61773B (fi) | 1982-05-31 |
| DK139798C (da) | 1979-09-17 |
| DE2360081A1 (de) | 1975-06-12 |
| DK611774A (enrdf_load_stackoverflow) | 1975-07-28 |
| GB1495295A (en) | 1977-12-14 |
| ATA962674A (de) | 1980-07-15 |
| FR2253285B1 (enrdf_load_stackoverflow) | 1979-07-27 |
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