FR2253285B1 - - Google Patents

Info

Publication number
FR2253285B1
FR2253285B1 FR7439527A FR7439527A FR2253285B1 FR 2253285 B1 FR2253285 B1 FR 2253285B1 FR 7439527 A FR7439527 A FR 7439527A FR 7439527 A FR7439527 A FR 7439527A FR 2253285 B1 FR2253285 B1 FR 2253285B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7439527A
Other languages
French (fr)
Other versions
FR2253285A1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732360081 external-priority patent/DE2360081C3/de
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of FR2253285A1 publication Critical patent/FR2253285A1/fr
Application granted granted Critical
Publication of FR2253285B1 publication Critical patent/FR2253285B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
FR7439527A 1973-12-03 1974-12-03 Expired FR2253285B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732360081 DE2360081C3 (de) 1973-12-03 Thyristor mit monolithisch integrierter Diode und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
FR2253285A1 FR2253285A1 (enrdf_load_stackoverflow) 1975-06-27
FR2253285B1 true FR2253285B1 (enrdf_load_stackoverflow) 1979-07-27

Family

ID=5899690

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7439527A Expired FR2253285B1 (enrdf_load_stackoverflow) 1973-12-03 1974-12-03

Country Status (6)

Country Link
AT (1) AT361043B (enrdf_load_stackoverflow)
DK (1) DK139798C (enrdf_load_stackoverflow)
FI (1) FI61773C (enrdf_load_stackoverflow)
FR (1) FR2253285B1 (enrdf_load_stackoverflow)
GB (1) GB1495295A (enrdf_load_stackoverflow)
IT (1) IT1030860B (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2451106A1 (fr) * 1979-03-09 1980-10-03 Thomson Csf Dispositif semi-conducteur de commutation a frequence elevee
DE3004681A1 (de) * 1980-02-08 1981-08-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Integrierte schaltungsanordnung mit einer diode
FR2514558A1 (fr) * 1981-10-13 1983-04-15 Silicium Semiconducteur Ssc Procede de fabrication de thyristor asymetrique a diode de conduction inverse par diffusion au phosphure de gallium
FR2574594B1 (fr) * 1984-12-11 1987-01-16 Silicium Semiconducteur Ssc Structure integree de triac a commande par diac
GB2256743A (en) * 1991-06-11 1992-12-16 Texas Instruments Ltd A semiconductor component for transient voltage limiting
GB2256744A (en) * 1991-06-11 1992-12-16 Texas Instruments Ltd A monolithic semiconductor component for transient voltage suppression
JPH05152564A (ja) * 1991-12-02 1993-06-18 Mitsubishi Electric Corp 逆導通ゲートターンオフサイリスタおよびその製造方法

Also Published As

Publication number Publication date
AT361043B (de) 1981-02-10
FI61773C (fi) 1982-09-10
FI348874A7 (enrdf_load_stackoverflow) 1975-06-04
DK139798B (da) 1979-04-17
FR2253285A1 (enrdf_load_stackoverflow) 1975-06-27
IT1030860B (it) 1979-04-10
DE2360081B2 (de) 1977-04-28
FI61773B (fi) 1982-05-31
DK139798C (da) 1979-09-17
DE2360081A1 (de) 1975-06-12
DK611774A (enrdf_load_stackoverflow) 1975-07-28
GB1495295A (en) 1977-12-14
ATA962674A (de) 1980-07-15

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Legal Events

Date Code Title Description
ST Notification of lapse