DK139798C - Thyristor med monolitisk integreret diode og fremgangsmaade til fremstilling deraf - Google Patents

Thyristor med monolitisk integreret diode og fremgangsmaade til fremstilling deraf

Info

Publication number
DK139798C
DK139798C DK611774A DK611774A DK139798C DK 139798 C DK139798 C DK 139798C DK 611774 A DK611774 A DK 611774A DK 611774 A DK611774 A DK 611774A DK 139798 C DK139798 C DK 139798C
Authority
DK
Denmark
Prior art keywords
monolitic
thyristor
manufacture
integrated diode
diode
Prior art date
Application number
DK611774A
Other languages
Danish (da)
English (en)
Other versions
DK139798B (da
DK611774A (enrdf_load_stackoverflow
Inventor
E Borchert
H Gesing
R Schimmer
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732360081 external-priority patent/DE2360081C3/de
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Publication of DK611774A publication Critical patent/DK611774A/da
Publication of DK139798B publication Critical patent/DK139798B/da
Application granted granted Critical
Publication of DK139798C publication Critical patent/DK139798C/da

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
DK611774A 1973-12-03 1974-11-25 Thyristor med monolitisk integreret diode og fremgangsmaade til fremstilling deraf DK139798C (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732360081 DE2360081C3 (de) 1973-12-03 Thyristor mit monolithisch integrierter Diode und Verfahren zu seiner Herstellung

Publications (3)

Publication Number Publication Date
DK611774A DK611774A (enrdf_load_stackoverflow) 1975-07-28
DK139798B DK139798B (da) 1979-04-17
DK139798C true DK139798C (da) 1979-09-17

Family

ID=5899690

Family Applications (1)

Application Number Title Priority Date Filing Date
DK611774A DK139798C (da) 1973-12-03 1974-11-25 Thyristor med monolitisk integreret diode og fremgangsmaade til fremstilling deraf

Country Status (6)

Country Link
AT (1) AT361043B (enrdf_load_stackoverflow)
DK (1) DK139798C (enrdf_load_stackoverflow)
FI (1) FI61773C (enrdf_load_stackoverflow)
FR (1) FR2253285B1 (enrdf_load_stackoverflow)
GB (1) GB1495295A (enrdf_load_stackoverflow)
IT (1) IT1030860B (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2451106A1 (fr) * 1979-03-09 1980-10-03 Thomson Csf Dispositif semi-conducteur de commutation a frequence elevee
DE3004681A1 (de) * 1980-02-08 1981-08-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Integrierte schaltungsanordnung mit einer diode
FR2514558A1 (fr) * 1981-10-13 1983-04-15 Silicium Semiconducteur Ssc Procede de fabrication de thyristor asymetrique a diode de conduction inverse par diffusion au phosphure de gallium
FR2574594B1 (fr) * 1984-12-11 1987-01-16 Silicium Semiconducteur Ssc Structure integree de triac a commande par diac
GB2256744A (en) * 1991-06-11 1992-12-16 Texas Instruments Ltd A monolithic semiconductor component for transient voltage suppression
GB2256743A (en) * 1991-06-11 1992-12-16 Texas Instruments Ltd A semiconductor component for transient voltage limiting
JPH05152564A (ja) * 1991-12-02 1993-06-18 Mitsubishi Electric Corp 逆導通ゲートターンオフサイリスタおよびその製造方法

Also Published As

Publication number Publication date
IT1030860B (it) 1979-04-10
FR2253285A1 (enrdf_load_stackoverflow) 1975-06-27
DK139798B (da) 1979-04-17
DE2360081B2 (de) 1977-04-28
FI61773C (fi) 1982-09-10
GB1495295A (en) 1977-12-14
DK611774A (enrdf_load_stackoverflow) 1975-07-28
DE2360081A1 (de) 1975-06-12
FR2253285B1 (enrdf_load_stackoverflow) 1979-07-27
ATA962674A (de) 1980-07-15
FI348874A7 (enrdf_load_stackoverflow) 1975-06-04
AT361043B (de) 1981-02-10
FI61773B (fi) 1982-05-31

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