GB1495295A - Thyristor combined with monolithically integrated diode and method for producing it - Google Patents
Thyristor combined with monolithically integrated diode and method for producing itInfo
- Publication number
- GB1495295A GB1495295A GB52228/74A GB5222874A GB1495295A GB 1495295 A GB1495295 A GB 1495295A GB 52228/74 A GB52228/74 A GB 52228/74A GB 5222874 A GB5222874 A GB 5222874A GB 1495295 A GB1495295 A GB 1495295A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- thyristor
- diode
- layers
- produced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 4
- 229910052698 phosphorus Inorganic materials 0.000 abstract 4
- 239000011574 phosphorus Substances 0.000 abstract 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- -1 phosphorus nitride Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
- H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732360081 DE2360081C3 (de) | 1973-12-03 | Thyristor mit monolithisch integrierter Diode und Verfahren zu seiner Herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1495295A true GB1495295A (en) | 1977-12-14 |
Family
ID=5899690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB52228/74A Expired GB1495295A (en) | 1973-12-03 | 1974-12-03 | Thyristor combined with monolithically integrated diode and method for producing it |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT361043B (enrdf_load_stackoverflow) |
| DK (1) | DK139798C (enrdf_load_stackoverflow) |
| FI (1) | FI61773C (enrdf_load_stackoverflow) |
| FR (1) | FR2253285B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1495295A (enrdf_load_stackoverflow) |
| IT (1) | IT1030860B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3004681A1 (de) * | 1980-02-08 | 1981-08-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Integrierte schaltungsanordnung mit einer diode |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2451106A1 (fr) * | 1979-03-09 | 1980-10-03 | Thomson Csf | Dispositif semi-conducteur de commutation a frequence elevee |
| FR2514558A1 (fr) * | 1981-10-13 | 1983-04-15 | Silicium Semiconducteur Ssc | Procede de fabrication de thyristor asymetrique a diode de conduction inverse par diffusion au phosphure de gallium |
| FR2574594B1 (fr) * | 1984-12-11 | 1987-01-16 | Silicium Semiconducteur Ssc | Structure integree de triac a commande par diac |
| GB2256744A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A monolithic semiconductor component for transient voltage suppression |
| GB2256743A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A semiconductor component for transient voltage limiting |
| JPH05152564A (ja) * | 1991-12-02 | 1993-06-18 | Mitsubishi Electric Corp | 逆導通ゲートターンオフサイリスタおよびその製造方法 |
-
1974
- 1974-11-25 DK DK611774A patent/DK139798C/da active
- 1974-12-02 IT IT30084/74A patent/IT1030860B/it active
- 1974-12-02 FI FI3488/74A patent/FI61773C/fi active
- 1974-12-02 AT AT962674A patent/AT361043B/de not_active IP Right Cessation
- 1974-12-03 FR FR7439527A patent/FR2253285B1/fr not_active Expired
- 1974-12-03 GB GB52228/74A patent/GB1495295A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3004681A1 (de) * | 1980-02-08 | 1981-08-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Integrierte schaltungsanordnung mit einer diode |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1030860B (it) | 1979-04-10 |
| FR2253285A1 (enrdf_load_stackoverflow) | 1975-06-27 |
| DK139798B (da) | 1979-04-17 |
| DE2360081B2 (de) | 1977-04-28 |
| FI61773C (fi) | 1982-09-10 |
| DK611774A (enrdf_load_stackoverflow) | 1975-07-28 |
| DE2360081A1 (de) | 1975-06-12 |
| FR2253285B1 (enrdf_load_stackoverflow) | 1979-07-27 |
| ATA962674A (de) | 1980-07-15 |
| FI348874A7 (enrdf_load_stackoverflow) | 1975-06-04 |
| AT361043B (de) | 1981-02-10 |
| FI61773B (fi) | 1982-05-31 |
| DK139798C (da) | 1979-09-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |