FI123487B - Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle - Google Patents
Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle Download PDFInfo
- Publication number
- FI123487B FI123487B FI20095676A FI20095676A FI123487B FI 123487 B FI123487 B FI 123487B FI 20095676 A FI20095676 A FI 20095676A FI 20095676 A FI20095676 A FI 20095676A FI 123487 B FI123487 B FI 123487B
- Authority
- FI
- Finland
- Prior art keywords
- vacuum
- chambers
- substrates
- chamber
- vacuum chambers
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20095676A FI123487B (fi) | 2009-06-15 | 2009-06-15 | Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle |
CN201080026506.XA CN102803558B (zh) | 2009-06-15 | 2010-06-14 | 原子层沉积设备 |
PCT/FI2010/050492 WO2010146234A1 (fr) | 2009-06-15 | 2010-06-14 | Appareil |
EP10744971A EP2462256A1 (fr) | 2009-06-15 | 2010-06-14 | Appareil |
US13/320,982 US20120067284A1 (en) | 2009-06-15 | 2010-06-14 | Apparatus |
TW099119401A TW201116647A (en) | 2009-06-15 | 2010-06-15 | Apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20095676 | 2009-06-15 | ||
FI20095676A FI123487B (fi) | 2009-06-15 | 2009-06-15 | Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle |
Publications (3)
Publication Number | Publication Date |
---|---|
FI20095676A0 FI20095676A0 (fi) | 2009-06-15 |
FI20095676A FI20095676A (fi) | 2010-12-16 |
FI123487B true FI123487B (fi) | 2013-05-31 |
Family
ID=40825379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20095676A FI123487B (fi) | 2009-06-15 | 2009-06-15 | Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120067284A1 (fr) |
EP (1) | EP2462256A1 (fr) |
CN (1) | CN102803558B (fr) |
FI (1) | FI123487B (fr) |
TW (1) | TW201116647A (fr) |
WO (1) | WO2010146234A1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI20115073A0 (fi) * | 2011-01-26 | 2011-01-26 | Beneq Oy | Laitteisto, menetelmä ja reaktiokammio |
CN102644063A (zh) * | 2012-04-20 | 2012-08-22 | 北京七星华创电子股份有限公司 | 用于实现原子层沉积工艺的设备 |
CN110724937A (zh) * | 2018-07-16 | 2020-01-24 | 江苏迈纳德微纳技术有限公司 | 用于高纯薄膜沉积的原子层沉积系统 |
FI129627B (en) * | 2019-06-28 | 2022-05-31 | Beneq Oy | Nuclear layer cultivation equipment |
FI129580B (en) * | 2021-03-30 | 2022-05-13 | Beneq Oy | Charging device, arrangement and method for charging the reaction chamber |
FI130387B (fi) | 2021-03-30 | 2023-08-07 | Beneq Oy | Atomikerroskasvatuslaite |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3707672A1 (de) * | 1987-03-10 | 1988-09-22 | Sitesa Sa | Epitaxieanlage |
JPH06188229A (ja) * | 1992-12-16 | 1994-07-08 | Tokyo Electron Yamanashi Kk | エッチングの後処理方法 |
JP3380652B2 (ja) * | 1995-05-26 | 2003-02-24 | 東京エレクトロン株式会社 | 処理装置 |
FI118343B (fi) * | 1999-12-28 | 2007-10-15 | Asm Int | Laite ohutkalvojen valmistamiseksi |
US6902624B2 (en) * | 2001-10-29 | 2005-06-07 | Genus, Inc. | Massively parallel atomic layer deposition/chemical vapor deposition system |
JP2003297901A (ja) * | 2002-04-05 | 2003-10-17 | Supurauto:Kk | 基板処理システムおよびその処理方法 |
JP3702257B2 (ja) * | 2002-08-23 | 2005-10-05 | ファナック株式会社 | ロボットハンドリング装置 |
US6916374B2 (en) * | 2002-10-08 | 2005-07-12 | Micron Technology, Inc. | Atomic layer deposition methods and atomic layer deposition tools |
US20090016853A1 (en) * | 2007-07-09 | 2009-01-15 | Woo Sik Yoo | In-line wafer robotic processing system |
US8282334B2 (en) * | 2008-08-01 | 2012-10-09 | Picosun Oy | Atomic layer deposition apparatus and loading methods |
-
2009
- 2009-06-15 FI FI20095676A patent/FI123487B/fi active IP Right Grant
-
2010
- 2010-06-14 EP EP10744971A patent/EP2462256A1/fr not_active Withdrawn
- 2010-06-14 CN CN201080026506.XA patent/CN102803558B/zh active Active
- 2010-06-14 WO PCT/FI2010/050492 patent/WO2010146234A1/fr active Application Filing
- 2010-06-14 US US13/320,982 patent/US20120067284A1/en not_active Abandoned
- 2010-06-15 TW TW099119401A patent/TW201116647A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TW201116647A (en) | 2011-05-16 |
US20120067284A1 (en) | 2012-03-22 |
WO2010146234A1 (fr) | 2010-12-23 |
CN102803558A (zh) | 2012-11-28 |
CN102803558B (zh) | 2015-06-17 |
FI20095676A (fi) | 2010-12-16 |
EP2462256A1 (fr) | 2012-06-13 |
FI20095676A0 (fi) | 2009-06-15 |
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