FI20095676A - Laitteisto - Google Patents

Laitteisto Download PDF

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Publication number
FI20095676A
FI20095676A FI20095676A FI20095676A FI20095676A FI 20095676 A FI20095676 A FI 20095676A FI 20095676 A FI20095676 A FI 20095676A FI 20095676 A FI20095676 A FI 20095676A FI 20095676 A FI20095676 A FI 20095676A
Authority
FI
Finland
Application number
FI20095676A
Other languages
English (en)
Swedish (sv)
Other versions
FI20095676A0 (fi
FI123487B (fi
Inventor
Pekka Soininen
Jarmo Skarp
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20095676A priority Critical patent/FI123487B/fi
Publication of FI20095676A0 publication Critical patent/FI20095676A0/fi
Priority to US13/320,982 priority patent/US20120067284A1/en
Priority to PCT/FI2010/050492 priority patent/WO2010146234A1/en
Priority to CN201080026506.XA priority patent/CN102803558B/zh
Priority to EP10744971A priority patent/EP2462256A1/en
Priority to TW099119401A priority patent/TW201116647A/zh
Publication of FI20095676A publication Critical patent/FI20095676A/fi
Application granted granted Critical
Publication of FI123487B publication Critical patent/FI123487B/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
FI20095676A 2009-06-15 2009-06-15 Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle FI123487B (fi)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FI20095676A FI123487B (fi) 2009-06-15 2009-06-15 Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle
US13/320,982 US20120067284A1 (en) 2009-06-15 2010-06-14 Apparatus
PCT/FI2010/050492 WO2010146234A1 (en) 2009-06-15 2010-06-14 Apparatus
CN201080026506.XA CN102803558B (zh) 2009-06-15 2010-06-14 原子层沉积设备
EP10744971A EP2462256A1 (en) 2009-06-15 2010-06-14 Apparatus
TW099119401A TW201116647A (en) 2009-06-15 2010-06-15 Apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20095676 2009-06-15
FI20095676A FI123487B (fi) 2009-06-15 2009-06-15 Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle

Publications (3)

Publication Number Publication Date
FI20095676A0 FI20095676A0 (fi) 2009-06-15
FI20095676A true FI20095676A (fi) 2010-12-16
FI123487B FI123487B (fi) 2013-05-31

Family

ID=40825379

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20095676A FI123487B (fi) 2009-06-15 2009-06-15 Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle

Country Status (6)

Country Link
US (1) US20120067284A1 (fi)
EP (1) EP2462256A1 (fi)
CN (1) CN102803558B (fi)
FI (1) FI123487B (fi)
TW (1) TW201116647A (fi)
WO (1) WO2010146234A1 (fi)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI20115073A0 (fi) 2011-01-26 2011-01-26 Beneq Oy Laitteisto, menetelmä ja reaktiokammio
CN102644063A (zh) * 2012-04-20 2012-08-22 北京七星华创电子股份有限公司 用于实现原子层沉积工艺的设备
CN110724937A (zh) * 2018-07-16 2020-01-24 江苏迈纳德微纳技术有限公司 用于高纯薄膜沉积的原子层沉积系统
FI129627B (fi) * 2019-06-28 2022-05-31 Beneq Oy Atomikerroskasvatuslaitteisto
FI130387B (fi) * 2021-03-30 2023-08-07 Beneq Oy Atomikerroskasvatuslaite
FI129580B (fi) * 2021-03-30 2022-05-13 Beneq Oy Latauslaite, järjestely ja menetelmä reaktiokammion lataamiseksi

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3707672A1 (de) * 1987-03-10 1988-09-22 Sitesa Sa Epitaxieanlage
JPH06188229A (ja) * 1992-12-16 1994-07-08 Tokyo Electron Yamanashi Kk エッチングの後処理方法
JP3380652B2 (ja) * 1995-05-26 2003-02-24 東京エレクトロン株式会社 処理装置
FI118343B (fi) * 1999-12-28 2007-10-15 Asm Int Laite ohutkalvojen valmistamiseksi
US6902624B2 (en) * 2001-10-29 2005-06-07 Genus, Inc. Massively parallel atomic layer deposition/chemical vapor deposition system
JP2003297901A (ja) * 2002-04-05 2003-10-17 Supurauto:Kk 基板処理システムおよびその処理方法
JP3702257B2 (ja) * 2002-08-23 2005-10-05 ファナック株式会社 ロボットハンドリング装置
US6916374B2 (en) * 2002-10-08 2005-07-12 Micron Technology, Inc. Atomic layer deposition methods and atomic layer deposition tools
US20090016853A1 (en) * 2007-07-09 2009-01-15 Woo Sik Yoo In-line wafer robotic processing system
US8282334B2 (en) * 2008-08-01 2012-10-09 Picosun Oy Atomic layer deposition apparatus and loading methods

Also Published As

Publication number Publication date
TW201116647A (en) 2011-05-16
WO2010146234A1 (en) 2010-12-23
CN102803558B (zh) 2015-06-17
US20120067284A1 (en) 2012-03-22
FI20095676A0 (fi) 2009-06-15
CN102803558A (zh) 2012-11-28
EP2462256A1 (en) 2012-06-13
FI123487B (fi) 2013-05-31

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