FI122511B - Grafeenia sisältävät hiutaleet ja menetelmä grafeenin eksfoliaatiota varten - Google Patents

Grafeenia sisältävät hiutaleet ja menetelmä grafeenin eksfoliaatiota varten Download PDF

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Publication number
FI122511B
FI122511B FI20095191A FI20095191A FI122511B FI 122511 B FI122511 B FI 122511B FI 20095191 A FI20095191 A FI 20095191A FI 20095191 A FI20095191 A FI 20095191A FI 122511 B FI122511 B FI 122511B
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FI
Finland
Prior art keywords
graphene
proteins
layer
protein
flake
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FI20095191A
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English (en)
Finnish (fi)
Swedish (sv)
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FI20095191A0 (fi
FI20095191A (fi
Inventor
Markus Linder
Paeivi Laaksonen
Jouni Ahopelto
Original Assignee
Valtion Teknillinen
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Application filed by Valtion Teknillinen filed Critical Valtion Teknillinen
Publication of FI20095191A0 publication Critical patent/FI20095191A0/fi
Priority to FI20095191A priority Critical patent/FI122511B/fi
Priority to US13/203,481 priority patent/US9620727B2/en
Priority to PCT/FI2010/050142 priority patent/WO2010097517A2/en
Priority to JP2011551507A priority patent/JP5560292B2/ja
Priority to EP10710368A priority patent/EP2401778A1/en
Priority to US13/203,482 priority patent/US20120058344A1/en
Priority to EP10710367A priority patent/EP2401230A2/en
Priority to JP2011551508A priority patent/JP5878763B2/ja
Priority to PCT/FI2010/050143 priority patent/WO2010097518A1/en
Publication of FI20095191A publication Critical patent/FI20095191A/fi
Application granted granted Critical
Publication of FI122511B publication Critical patent/FI122511B/fi

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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07KPEPTIDES
    • C07K17/00Carrier-bound or immobilised peptides; Preparation thereof
    • C07K17/14Peptides being immobilised on, or in, an inorganic carrier
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/182Graphene
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/182Graphene
    • C01B32/184Preparation
    • C01B32/19Preparation by exfoliation
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/182Graphene
    • C01B32/194After-treatment
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/20Graphite
    • C01B32/21After-treatment
    • C01B32/22Intercalation
    • C01B32/225Expansion; Exfoliation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606Graphene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/761Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00Structure or properties of graphene
    • C01B2204/04Specific amount of layers or specific thickness
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00Structure or properties of graphene
    • C01B2204/20Graphene characterized by its properties
    • C01B2204/32Size or surface area
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/30Self-sustaining carbon mass or layer with impregnant or other layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31855Of addition polymer from unsaturated monomers
    • Y10T428/31938Polymer of monoethylenically unsaturated hydrocarbon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Biophysics (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Geology (AREA)
  • Proteomics, Peptides & Aminoacids (AREA)
  • Medicinal Chemistry (AREA)
  • Genetics & Genomics (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Thin Film Transistor (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
FI20095191A 2009-02-26 2009-02-26 Grafeenia sisältävät hiutaleet ja menetelmä grafeenin eksfoliaatiota varten FI122511B (fi)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FI20095191A FI122511B (fi) 2009-02-26 2009-02-26 Grafeenia sisältävät hiutaleet ja menetelmä grafeenin eksfoliaatiota varten
EP10710368A EP2401778A1 (en) 2009-02-26 2010-02-25 Electronic devices with protein layers
PCT/FI2010/050142 WO2010097517A2 (en) 2009-02-26 2010-02-25 Graphene-containing platelets and electronic devices, and method of exfoliating graphene
JP2011551507A JP5560292B2 (ja) 2009-02-26 2010-02-25 グラフェン含有プレートレットおよび電子デバイス、並びにグラフェンを剥離する方法
US13/203,481 US9620727B2 (en) 2009-02-26 2010-02-25 Graphene-containing platelets and electronic devices, and method of exfoliating graphene
US13/203,482 US20120058344A1 (en) 2009-02-26 2010-02-25 Electronic Devices with Protein Layers
EP10710367A EP2401230A2 (en) 2009-02-26 2010-02-25 Graphene-containing platelets and electronic devices, and method of exfoliating graphene
JP2011551508A JP5878763B2 (ja) 2009-02-26 2010-02-25 タンパク質層を有する電子デバイス
PCT/FI2010/050143 WO2010097518A1 (en) 2009-02-26 2010-02-25 Electronic devices with protein layers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20095191 2009-02-26
FI20095191A FI122511B (fi) 2009-02-26 2009-02-26 Grafeenia sisältävät hiutaleet ja menetelmä grafeenin eksfoliaatiota varten

Publications (3)

Publication Number Publication Date
FI20095191A0 FI20095191A0 (fi) 2009-02-26
FI20095191A FI20095191A (fi) 2010-08-27
FI122511B true FI122511B (fi) 2012-02-29

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FI20095191A FI122511B (fi) 2009-02-26 2009-02-26 Grafeenia sisältävät hiutaleet ja menetelmä grafeenin eksfoliaatiota varten

Country Status (5)

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US (2) US20120058344A1 (ja)
EP (2) EP2401230A2 (ja)
JP (2) JP5878763B2 (ja)
FI (1) FI122511B (ja)
WO (2) WO2010097518A1 (ja)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI122511B (fi) * 2009-02-26 2012-02-29 Valtion Teknillinen Grafeenia sisältävät hiutaleet ja menetelmä grafeenin eksfoliaatiota varten
EP2426487A1 (en) 2010-09-03 2012-03-07 The Provost Fellows And Scholars Of The College Of The Holy and Undivided Trinity Of Queen Elizabeth Near Dublin Nano-carbon sensor and method of making a sensor
JP6124796B2 (ja) 2010-12-08 2017-05-10 ヘイデール・グラフェン・インダストリーズ・ピーエルシー 粒状物質、それらを含む複合材料、それらの調製および使用
US11119097B2 (en) 2011-12-05 2021-09-14 The Trustees Of The University Of Pennsylvania Graphene-biomolecule bioelectronic devices
CN103187391B (zh) * 2011-12-31 2016-01-06 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
CN103293322B (zh) * 2013-05-29 2015-09-30 太原理工大学 功能肽tps在特异性筛选内皮祖细胞中的应用
EP2848929A1 (en) 2013-09-11 2015-03-18 AIT Austrian Institute of Technology GmbH Graphene FET-based biosensor
GB201401715D0 (en) * 2014-01-31 2014-03-19 Univ Manchester Exfoliation
EP3157864B1 (en) * 2014-06-20 2021-04-07 Directa Plus S.p.A. Continuous process for preparing pristine graphene nanoplatelets
ITUB20152559A1 (it) * 2015-07-28 2017-01-28 Univ Degli Studi Dellaquila Materiali tridimensionali a base di ossido di grafene (go)
JP6560118B2 (ja) * 2015-12-25 2019-08-14 国立大学法人室蘭工業大学 グラフェン分散液の取得方法
US10850496B2 (en) * 2016-02-09 2020-12-01 Global Graphene Group, Inc. Chemical-free production of graphene-reinforced inorganic matrix composites
CN107167608B (zh) * 2017-04-06 2019-03-19 中国科学院上海微系统与信息技术研究所 一种基于多功能纳米级蛋白薄膜的石墨烯肿瘤标志物传感器及其制备方法
JP7229659B2 (ja) 2017-11-02 2023-02-28 住友重機械工業株式会社 動力伝達装置
CN108440670B (zh) * 2018-02-13 2021-04-27 天津大学 融合蛋白hfbi-rgd作为疏水性材料分散剂的用途
AU2019260666B2 (en) 2018-04-25 2021-11-18 Boston Scientific Scimed, Inc. Chemical varactor-based sensors with non-covalent, electrostatic surface modification of graphene
FI128434B (en) 2018-04-30 2020-05-15 Teknologian Tutkimuskeskus Vtt Oy Manufacture of graphene structures
US20210253455A1 (en) * 2018-07-11 2021-08-19 Shanghai Tetrels Material Technology Co., Ltd. Devices and methods for water treatment
JP6876661B2 (ja) * 2018-09-13 2021-05-26 株式会社東芝 有機物プローブ及び分子検出装置
CN110379716B (zh) * 2019-07-24 2021-08-20 吉林建筑大学 一种蛋白质基底上氧化锌基薄膜晶体管制备方法
JP2022545670A (ja) 2019-08-20 2022-10-28 ボストン サイエンティフィック サイムド,インコーポレイテッド グラフェンベースの化学センサの非共有結合性修飾
WO2022039251A1 (ja) * 2020-08-20 2022-02-24 国立大学法人大阪大学 グラフェングリッド、グラフェングリッドの製造方法、構造解析対象物質の構造解析方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2548703B2 (ja) * 1986-07-11 1996-10-30 三菱電機株式会社 論理回路
CA2328593C (en) * 1998-05-20 2011-07-12 Integrated Nano-Technologies, Llc Chemically assembled nano-scale devices
JP3578098B2 (ja) * 2001-03-16 2004-10-20 富士ゼロックス株式会社 電気接続体の製造方法、電気接続体および電気配線方法
EP1279742A1 (en) * 2001-07-23 2003-01-29 Applied NanoSystems B.V. Method of binding a compound to a sensor surface using hydrophobin
US8501858B2 (en) * 2002-09-12 2013-08-06 Board Of Trustees Of Michigan State University Expanded graphite and products produced therefrom
WO2004044586A1 (en) * 2002-11-08 2004-05-27 Nanomix, Inc. Nanotube-based electronic detection of biological molecules
CN1909979A (zh) * 2004-01-16 2007-02-07 应用超微系统股份有限公司 在低温下用疏水蛋白涂覆物体的方法
JP2006258661A (ja) * 2005-03-17 2006-09-28 Canon Inc 有機トランジスタ型バイオセンサーおよびバイオセンサ測定方法
US7658901B2 (en) * 2005-10-14 2010-02-09 The Trustees Of Princeton University Thermally exfoliated graphite oxide
US7566410B2 (en) 2006-01-11 2009-07-28 Nanotek Instruments, Inc. Highly conductive nano-scaled graphene plate nanocomposites
US7619257B2 (en) 2006-02-16 2009-11-17 Alcatel-Lucent Usa Inc. Devices including graphene layers epitaxially grown on single crystal substrates
JP2008082988A (ja) * 2006-09-28 2008-04-10 Hokkaido Univ 多段階増幅を利用した検出方法
US7892514B2 (en) 2007-02-22 2011-02-22 Nanotek Instruments, Inc. Method of producing nano-scaled graphene and inorganic platelets and their nanocomposites
US8168964B2 (en) * 2007-03-02 2012-05-01 Nec Corporation Semiconductor device using graphene and method of manufacturing the same
US9233850B2 (en) 2007-04-09 2016-01-12 Nanotek Instruments, Inc. Nano-scaled graphene plate films and articles
US8132746B2 (en) 2007-04-17 2012-03-13 Nanotek Instruments, Inc. Low-temperature method of producing nano-scaled graphene platelets and their nanocomposites
US7824651B2 (en) 2007-05-08 2010-11-02 Nanotek Instruments, Inc. Method of producing exfoliated graphite, flexible graphite, and nano-scaled graphene platelets
KR101478540B1 (ko) 2007-09-17 2015-01-02 삼성전자 주식회사 트랜지스터의 채널로 나노 물질을 이용하는 바이오 센서 및그 제조 방법
FR2929618B1 (fr) * 2008-04-03 2011-03-18 Commissariat Energie Atomique Procede pour assembler deux surfaces ou une surface avec une molecule d'interet
US8698226B2 (en) 2008-07-31 2014-04-15 University Of Connecticut Semiconductor devices, methods of manufacture thereof and articles comprising the same
FI122511B (fi) * 2009-02-26 2012-02-29 Valtion Teknillinen Grafeenia sisältävät hiutaleet ja menetelmä grafeenin eksfoliaatiota varten

Also Published As

Publication number Publication date
JP5560292B2 (ja) 2014-07-23
FI20095191A0 (fi) 2009-02-26
WO2010097518A1 (en) 2010-09-02
US20120058344A1 (en) 2012-03-08
JP2012518595A (ja) 2012-08-16
JP5878763B2 (ja) 2016-03-08
WO2010097517A3 (en) 2010-12-29
WO2010097517A2 (en) 2010-09-02
EP2401230A2 (en) 2012-01-04
EP2401778A1 (en) 2012-01-04
US20120052301A1 (en) 2012-03-01
JP2012518915A (ja) 2012-08-16
US9620727B2 (en) 2017-04-11
FI20095191A (fi) 2010-08-27

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