FI121540B - Menetelmä, jolla siirretään korkean aspektisuhteen omaavia molekyylirakenteita - Google Patents
Menetelmä, jolla siirretään korkean aspektisuhteen omaavia molekyylirakenteita Download PDFInfo
- Publication number
- FI121540B FI121540B FI20060227A FI20060227A FI121540B FI 121540 B FI121540 B FI 121540B FI 20060227 A FI20060227 A FI 20060227A FI 20060227 A FI20060227 A FI 20060227A FI 121540 B FI121540 B FI 121540B
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- Finland
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- 238000000034 method Methods 0.000 title claims description 81
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 79
- 239000002041 carbon nanotube Substances 0.000 claims description 69
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 68
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- 239000002071 nanotube Substances 0.000 claims description 12
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- 229910052799 carbon Inorganic materials 0.000 claims description 9
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000010923 batch production Methods 0.000 claims description 3
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- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 2
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- 229920001296 polysiloxane Polymers 0.000 claims 1
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- 239000000758 substrate Substances 0.000 description 41
- 239000002245 particle Substances 0.000 description 32
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 18
- 229910002091 carbon monoxide Inorganic materials 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 16
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 102000004196 processed proteins & peptides Human genes 0.000 description 1
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- XREXPQGDOPQPAH-QKUPJAQQSA-K trisodium;[(z)-18-[1,3-bis[[(z)-12-sulfonatooxyoctadec-9-enoyl]oxy]propan-2-yloxy]-18-oxooctadec-9-en-7-yl] sulfate Chemical compound [Na+].[Na+].[Na+].CCCCCCC(OS([O-])(=O)=O)C\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CC(CCCCCC)OS([O-])(=O)=O)COC(=O)CCCCCCC\C=C/CC(CCCCCC)OS([O-])(=O)=O XREXPQGDOPQPAH-QKUPJAQQSA-K 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
- B05D1/04—Processes for applying liquids or other fluent materials performed by spraying involving the use of an electrostatic field
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/152—Fullerenes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
- C01B32/174—Derivatisation; Solubilisation; Dispersion in solvents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
- Y10S977/845—Purification or separation of fullerenes or nanotubes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Priority Applications (16)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20060227A FI121540B (fi) | 2006-03-08 | 2006-03-08 | Menetelmä, jolla siirretään korkean aspektisuhteen omaavia molekyylirakenteita |
| KR1020087024493A KR101424676B1 (ko) | 2006-03-08 | 2007-03-07 | 고 종횡비 분자 구조들의 증착 방법 |
| PCT/FI2007/000060 WO2007101907A1 (en) | 2006-03-08 | 2007-03-07 | Method for separating high aspect ratio molecular structures |
| US12/281,868 US8871295B2 (en) | 2006-03-08 | 2007-03-07 | Method for separating high aspect ratio molecular structures |
| ES07712602.7T ES2627659T3 (es) | 2006-03-08 | 2007-03-07 | Procedimiento para la separación de estructuras moleculares de relación de aspecto elevada |
| PCT/FI2007/000059 WO2007101906A1 (en) | 2006-03-08 | 2007-03-07 | Method for depositing high aspect ratio molecular structures |
| US12/281,888 US8951602B2 (en) | 2006-03-08 | 2007-03-07 | Method for depositing high aspect ratio molecular structures |
| JP2008557776A JP5247476B2 (ja) | 2006-03-08 | 2007-03-07 | 高アスペクト比構造の堆積方法 |
| CN200780008320XA CN101400597B (zh) | 2006-03-08 | 2007-03-07 | 用于分离高纵横比分子结构的方法 |
| JP2008557777A JP5554501B2 (ja) | 2006-03-08 | 2007-03-07 | 高アスペクト比構造の分離方法 |
| EP07712601.9A EP1991497B8 (en) | 2006-03-08 | 2007-03-07 | Method for depositing high aspect ratio molecular structures |
| CN2007800083303A CN101400598B (zh) | 2006-03-08 | 2007-03-07 | 用于沉积高纵横比分子结构的方法 |
| EP07712602.7A EP1991498B1 (en) | 2006-03-08 | 2007-03-07 | Method for separating high aspect ratio molecular structures |
| ES07712601.9T ES2658071T3 (es) | 2006-03-08 | 2007-03-07 | Procedimiento para el depósito de estructuras moleculares con una relación entre dimensiones elevada |
| KR1020087024492A KR101476288B1 (ko) | 2006-03-08 | 2008-10-07 | 고 종횡비 분자 구조들의 분리 방법 |
| US14/588,870 US9776206B2 (en) | 2006-03-08 | 2015-01-02 | Method for depositing high aspect ratio molecular structures |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20060227A FI121540B (fi) | 2006-03-08 | 2006-03-08 | Menetelmä, jolla siirretään korkean aspektisuhteen omaavia molekyylirakenteita |
| FI20060227 | 2006-03-08 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI20060227A0 FI20060227A0 (fi) | 2006-03-08 |
| FI20060227A FI20060227A (fi) | 2007-09-09 |
| FI121540B true FI121540B (fi) | 2010-12-31 |
Family
ID=36191905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI20060227A FI121540B (fi) | 2006-03-08 | 2006-03-08 | Menetelmä, jolla siirretään korkean aspektisuhteen omaavia molekyylirakenteita |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US8951602B2 (ja) |
| EP (2) | EP1991498B1 (ja) |
| JP (2) | JP5554501B2 (ja) |
| KR (2) | KR101424676B1 (ja) |
| CN (2) | CN101400598B (ja) |
| ES (2) | ES2627659T3 (ja) |
| FI (1) | FI121540B (ja) |
| WO (2) | WO2007101906A1 (ja) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7718230B2 (en) * | 2004-11-11 | 2010-05-18 | Board Of Regents, The University Of Texas System | Method and apparatus for transferring an array of oriented carbon nanotubes |
| FI121540B (fi) * | 2006-03-08 | 2010-12-31 | Canatu Oy | Menetelmä, jolla siirretään korkean aspektisuhteen omaavia molekyylirakenteita |
| US7892610B2 (en) * | 2007-05-07 | 2011-02-22 | Nanosys, Inc. | Method and system for printing aligned nanowires and other electrical devices |
| KR101429698B1 (ko) | 2008-07-03 | 2014-08-13 | 유씨엘 비즈니스 피엘씨 | 나노튜브의 분산 및 분리 방법 |
| KR101616017B1 (ko) | 2008-07-03 | 2016-04-27 | 유씨엘 비즈니스 피엘씨 | 나노 물질의 분리 방법 |
| US8004018B2 (en) * | 2008-12-29 | 2011-08-23 | Nokia Corporation | Fabrication method of electronic devices based on aligned high aspect ratio nanoparticle networks |
| FI124440B (fi) * | 2009-01-28 | 2014-08-29 | Canatu Oy | Rakenteita, jotka käsittävät korkean aspektisuhteen omaavia molekyylirakenteita, ja valmistusmenetelmiä |
| TW201034276A (en) * | 2009-02-09 | 2010-09-16 | Applied Materials Inc | Mesoporous carbon material for energy storage |
| US10115972B2 (en) | 2009-04-30 | 2018-10-30 | University Of Florida Research Foundation, Incorporated | Single wall carbon nanotube based air cathodes |
| US20110135835A1 (en) * | 2009-06-08 | 2011-06-09 | Massachusetts Institute Of Technology | Method for depositing a carbon nanotube thin film coating on an arbitrary substrate directly from chemical vapor deposition synthesis |
| FI127197B (fi) | 2009-09-04 | 2018-01-31 | Canatu Oy | Kosketusnäyttö ja menetelmä kosketusnäytön valmistamiseksi |
| FI125151B (fi) * | 2010-03-05 | 2015-06-15 | Canatu Oy | Menetelmä konformisen elementin valmistamiseksi |
| TW201203041A (en) | 2010-03-05 | 2012-01-16 | Canatu Oy | A touch sensitive film and a touch sensing device |
| KR101862432B1 (ko) | 2010-12-17 | 2018-05-29 | 유니버시티 오브 플로리다 리서치 파운데이션, 인코포레이티드 | 탄소 필름상에서의 수소 산화 및 발생 |
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| ES2627659T3 (es) | 2017-07-31 |
| US20090304945A1 (en) | 2009-12-10 |
| US20090280238A1 (en) | 2009-11-12 |
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