FI121540B - Förfarande för förskjutande av molekylstrukturer med höga aspektförhållanden - Google Patents
Förfarande för förskjutande av molekylstrukturer med höga aspektförhållanden Download PDFInfo
- Publication number
- FI121540B FI121540B FI20060227A FI20060227A FI121540B FI 121540 B FI121540 B FI 121540B FI 20060227 A FI20060227 A FI 20060227A FI 20060227 A FI20060227 A FI 20060227A FI 121540 B FI121540 B FI 121540B
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
- B05D1/04—Processes for applying liquids or other fluent materials performed by spraying involving the use of an electrostatic field
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/152—Fullerenes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
- C01B32/174—Derivatisation; Solubilisation; Dispersion in solvents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
- Y10S977/845—Purification or separation of fullerenes or nanotubes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Claims (11)
1. Förfarande för förskjutande av molekyl-strukturer med höga aspektiörhällanden (HARM-strukturer), kännetecknat av att förfarandet omfattar 5 användande av elektrisk eller elektrostatisk kraft tili dispersion som innehäller en eller flera HARM-strukturer som finns i knippen eller är enskilda, vil-ken kraft förskjuter HARM-strukturer som finns i knippen baserade pä den spontana reserveringen av de HARM-10 strukturer som finns i knippen jämfört med de enskilda HARM-strukturernas elektriska neutralitet, för att vä-sentligt kunna atskilja de HARM-strukturer som finns i knippen och är enskilda.
2. Förfarande enligt patentkrav 1, känneteck-15 nat av att förfarandet dessutom omfattar avlagring av en eller flera HARM-strukturer i separeringen av gas-, vätske- och/eller fast ämne och/eller i matrisen och/eller pä ytan som lager, monster och/eller struk-tur. 20
3. Förfarande enligt nägot av patentkraven 1 - 2, kännetecknat av att en HARM-struktur som finns i knippen och/eller är enskild lagras.
4. Förfarande enligt nägot av patentkraven 1 - 3, kännetecknat av att HARM-strukturer som finns i 25 knippen och är enskilda lagras.
5. Förfarande enligt nägot av patentkraven 1 - 4, kännetecknat av att HARM-strukturen omfattar na-norör, kolnanorör, kolnanorör som funktionaliserats med fulleren, bornitridnanorör, nanostav som innehäl- 30 ler koi, nanorör som innehäller fosfor, bor, kväve och/eller silikon, träd och/eller vilket som heist annat rör, en rörliknande stav och/eller band och/eller vilken som heist annan molekylstruktur med höga aspektiörhällanden som finns i enskild- eller knipp-35 form.
6. Förfarande enligt nägot av patentkraven 1 - 5, kännetecknat av att HARM-strukturen är positivt, negativt eller neutralt reserverad.
7. Förfarande enligt nägot av patentkraven 1 5 - 6, kännetecknat av att förfarandet dessutom omfattar tillägg av ett eller flera reagerande ämnen, tillsats-ämnen, beläggningsmaterial, funktionaliserande material, ytaktiva ämnen och/eller legeringsämnen tili en eller flera HARM-strukturer.
8. Användning av förfarandet enligt nägot av patentkraven 1 - 7 i en fortlöpande eller periodisk process för att producera, separera, bearbeta, lagra och/eller processa vidare en eller flera HARM-strukturer .
9. Användning av förfarandet enligt nägot av patentkraven 1 - 7 i framställningen av funktionellt material.
10. Användning av förfarandet enligt nägot av patentkraven 1 - 7 i framställningen av en tjock eller 20 tunn hinna, linje, ledning, mönster, lagrad och/eller tredimensionell struktur.
11. Användning av förfarandet enligt nägot av patentkraven 1 - 7 i framställningen av apparaten. 25
Priority Applications (16)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20060227A FI121540B (sv) | 2006-03-08 | 2006-03-08 | Förfarande för förskjutande av molekylstrukturer med höga aspektförhållanden |
| KR1020087024493A KR101424676B1 (ko) | 2006-03-08 | 2007-03-07 | 고 종횡비 분자 구조들의 증착 방법 |
| PCT/FI2007/000060 WO2007101907A1 (en) | 2006-03-08 | 2007-03-07 | Method for separating high aspect ratio molecular structures |
| US12/281,868 US8871295B2 (en) | 2006-03-08 | 2007-03-07 | Method for separating high aspect ratio molecular structures |
| ES07712602.7T ES2627659T3 (es) | 2006-03-08 | 2007-03-07 | Procedimiento para la separación de estructuras moleculares de relación de aspecto elevada |
| PCT/FI2007/000059 WO2007101906A1 (en) | 2006-03-08 | 2007-03-07 | Method for depositing high aspect ratio molecular structures |
| US12/281,888 US8951602B2 (en) | 2006-03-08 | 2007-03-07 | Method for depositing high aspect ratio molecular structures |
| JP2008557776A JP5247476B2 (ja) | 2006-03-08 | 2007-03-07 | 高アスペクト比構造の堆積方法 |
| CN200780008320XA CN101400597B (zh) | 2006-03-08 | 2007-03-07 | 用于分离高纵横比分子结构的方法 |
| JP2008557777A JP5554501B2 (ja) | 2006-03-08 | 2007-03-07 | 高アスペクト比構造の分離方法 |
| EP07712601.9A EP1991497B8 (en) | 2006-03-08 | 2007-03-07 | Method for depositing high aspect ratio molecular structures |
| CN2007800083303A CN101400598B (zh) | 2006-03-08 | 2007-03-07 | 用于沉积高纵横比分子结构的方法 |
| EP07712602.7A EP1991498B1 (en) | 2006-03-08 | 2007-03-07 | Method for separating high aspect ratio molecular structures |
| ES07712601.9T ES2658071T3 (es) | 2006-03-08 | 2007-03-07 | Procedimiento para el depósito de estructuras moleculares con una relación entre dimensiones elevada |
| KR1020087024492A KR101476288B1 (ko) | 2006-03-08 | 2008-10-07 | 고 종횡비 분자 구조들의 분리 방법 |
| US14/588,870 US9776206B2 (en) | 2006-03-08 | 2015-01-02 | Method for depositing high aspect ratio molecular structures |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20060227A FI121540B (sv) | 2006-03-08 | 2006-03-08 | Förfarande för förskjutande av molekylstrukturer med höga aspektförhållanden |
| FI20060227 | 2006-03-08 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI20060227A0 FI20060227A0 (sv) | 2006-03-08 |
| FI20060227A FI20060227A (sv) | 2007-09-09 |
| FI121540B true FI121540B (sv) | 2010-12-31 |
Family
ID=36191905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI20060227A FI121540B (sv) | 2006-03-08 | 2006-03-08 | Förfarande för förskjutande av molekylstrukturer med höga aspektförhållanden |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US8951602B2 (sv) |
| EP (2) | EP1991498B1 (sv) |
| JP (2) | JP5554501B2 (sv) |
| KR (2) | KR101424676B1 (sv) |
| CN (2) | CN101400598B (sv) |
| ES (2) | ES2627659T3 (sv) |
| FI (1) | FI121540B (sv) |
| WO (2) | WO2007101906A1 (sv) |
Families Citing this family (22)
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| KR101616017B1 (ko) | 2008-07-03 | 2016-04-27 | 유씨엘 비즈니스 피엘씨 | 나노 물질의 분리 방법 |
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| WO2007101907A1 (en) | 2007-09-13 |
| US8951602B2 (en) | 2015-02-10 |
| KR101476288B1 (ko) | 2014-12-24 |
| US20150209823A1 (en) | 2015-07-30 |
| FI20060227A (sv) | 2007-09-09 |
| US8871295B2 (en) | 2014-10-28 |
| EP1991498B1 (en) | 2017-03-08 |
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| EP1991498A1 (en) | 2008-11-19 |
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| KR20080113224A (ko) | 2008-12-29 |
| CN101400597A (zh) | 2009-04-01 |
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| CN101400598B (zh) | 2012-07-18 |
| JP5554501B2 (ja) | 2014-07-23 |
| FI20060227A0 (sv) | 2006-03-08 |
| ES2658071T3 (es) | 2018-03-08 |
| EP1991497B1 (en) | 2017-11-01 |
| KR20080112274A (ko) | 2008-12-24 |
| JP5247476B2 (ja) | 2013-07-24 |
| KR101424676B1 (ko) | 2014-08-01 |
| EP1991497A1 (en) | 2008-11-19 |
| CN101400597B (zh) | 2012-07-25 |
| US9776206B2 (en) | 2017-10-03 |
| WO2007101906A1 (en) | 2007-09-13 |
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| CN101400598A (zh) | 2009-04-01 |
| ES2627659T3 (es) | 2017-07-31 |
| US20090304945A1 (en) | 2009-12-10 |
| US20090280238A1 (en) | 2009-11-12 |
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