FI114755B - Förfarande för utformning av en kavitetsstruktur för en SOI-skiva samt en SOI-skivas kavitetsstruktur - Google Patents
Förfarande för utformning av en kavitetsstruktur för en SOI-skiva samt en SOI-skivas kavitetsstruktur Download PDFInfo
- Publication number
- FI114755B FI114755B FI20011922A FI20011922A FI114755B FI 114755 B FI114755 B FI 114755B FI 20011922 A FI20011922 A FI 20011922A FI 20011922 A FI20011922 A FI 20011922A FI 114755 B FI114755 B FI 114755B
- Authority
- FI
- Finland
- Prior art keywords
- layer
- silicon
- cavity
- cavities
- layers
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000005530 etching Methods 0.000 claims abstract description 28
- 235000012431 wafers Nutrition 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 238000011282 treatment Methods 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims 3
- 238000009413 insulation Methods 0.000 claims 1
- 229910001092 metal group alloy Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 44
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 8
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 8
- 239000010409 thin film Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000003373 anti-fouling effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 208000037062 Polyps Diseases 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000012258 culturing Methods 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00412—Mask characterised by its behaviour during the etching process, e.g. soluble masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76286—Lateral isolation by refilling of trenches with polycristalline material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0115—Porous silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0145—Hermetically sealing an opening in the lid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
Claims (6)
1. Förfarande för utformning av kaviteter i förtillverkade kiselskivor bestäende av ett första kiselskikt (1), ett andra enkristallint kiselskikt, ett sä kallat strukturskikt (3) väsentligen parallellt med det första kiselskiktet (1) samt av ett isoleringsskikt (2) 5 anordnat mellan skikten (1,3), vid vilket förfarande - i ätminstone det ena kiselskiktet (1,3) formas häl (4), som sträcker sig igenom skiktet, - fördjupningar etsas i isoleringsskiktet (2) med hjälp av etsningsmedel ledda via de bildade hälen (4), 10 kännetecknat av att - efter hälens (4) utformning och före etsningsfasen bildas pä den yta som skall behandlas ett tunt poröst skikt (5), genom vilket etsningsmedlen bringas att ledas tili de kaviteter (6) som skall etsas, och - efter kavitetemas (6) utformning bildas ätminstone ett tilläggsskikt (7) för att 15 ändra det porösa materialet tili att bli ogenomträngligt för gas.
2. Förfarande enligt patentkrav 1, kännetecknat av att i samband med hälens (4) . utformning formas även i isoleringsskiktet (2) en fördjupning (8), som i samband med ! skiktens (5 och 7) utformning ästadkommer en knottra (9), som sträcker sig in i , ; *, kaviteten (6). ,,,,; 20
3. Förfarande enligt patentkrav 1 eller 2, kännetecknat av att behandlingsytan hos det , * * ·. skikt (1,3) väri hälen (4) utformas väsentligen utplanas för att härtill ansluta integrerade komponenter (13) och metalleringar.
, · · ·. 4. Kavitetsstruktur i en förtillverkad kiselskiva bestäende av ett första kiselskikt (1), ett * f I . ‘ , andra enkristallint kiselskikt, ett sä kallat strukturskikt (3) väsentligen parallellt med det 25 första kiselskiktet (1) samt av ett isoleringsskikt (2) anordnat mellan skikten (1, 3), varvid • * ‘ - kavitetsstrukturen (6) är formad ätminstone väsentligen i isoleringsskiktet (2) mellan det första (1) och andra (3) kiselskiktet, och - ätminstone en sluten hälstruktur (4, 5, 7) avgränsar varje kavitet (6), 114755 kännetecknad av att - den mot kaviteten (6) belägna änden av den slutna hälstrukturen (4, 5, 7) uppvisar ätminstone ett poröst skikt (5), genom vilket etsningsmedel i tillverkningsfasen är bringade att ledas tili de kaviteter (6) som skall etsas, och 5 - den slutna hälstrukturen (4, 5, 7) uppvisar ätminstone ett tilläggsskikt (7) för att ändra det porösa materialet tili att bli ogenomträngligt för gas.
5. Kavitetsstruktur enligt patentkrav 4, kannetecknat av att hälstrukturen (4, 5, 7) bildar en knottra (9), som sträcker sig in i kaviteten (6).
6. Kavitetsstruktur enligt patentkrav 4 eller 5, kannetecknat av att behandlingsytan hos 10 det skikt (1, 3) väri hälstrukturen (4, 5, 7) bildas är väsentligen utplanad för att härtill ansluta integrerade komponenter (13) och metalleringar. i · tilli I » tl» » 1 » » I t * » I | • I 1 >
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20011922A FI114755B (sv) | 2001-10-01 | 2001-10-01 | Förfarande för utformning av en kavitetsstruktur för en SOI-skiva samt en SOI-skivas kavitetsstruktur |
| JP2003533331A JP2005504644A (ja) | 2001-10-01 | 2002-09-27 | Ｓｏｉ基板にキャビティ構造を形成する方法およびｓｏｉ基板に形成されたキャビティ構造 |
| KR1020047004728A KR100889115B1 (ko) | 2001-10-01 | 2002-09-27 | Ｓｏｉ 기판상에 공동구조를 형성하는 방법 및 ｓｏｉ기판상에 형성된 공동구조 |
| PCT/FI2002/000772 WO2003030234A1 (en) | 2001-10-01 | 2002-09-27 | Method for forming a cavity structure on soi substrate and cavity structure formed on soi substrate |
| EP02764899.7A EP1433199B1 (en) | 2001-10-01 | 2002-09-27 | Method for forming a cavity structure in an soi substrate and cavity structure formed in an soi substrate |
| CNB028194314A CN1288724C (zh) | 2001-10-01 | 2002-09-27 | 在绝缘体上硅基底上形成腔结构的方法 |
| US10/491,193 US6930366B2 (en) | 2001-10-01 | 2002-09-27 | Method for forming a cavity structure on SOI substrate and cavity structure formed on SOI substrate |
| HK05105143A HK1072497A1 (en) | 2001-10-01 | 2005-06-21 | Method for forming a cavity structure on soil substrate |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20011922A FI114755B (sv) | 2001-10-01 | 2001-10-01 | Förfarande för utformning av en kavitetsstruktur för en SOI-skiva samt en SOI-skivas kavitetsstruktur |
| FI20011922 | 2001-10-01 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI20011922A0 FI20011922A0 (sv) | 2001-10-01 |
| FI20011922A FI20011922A (sv) | 2003-04-02 |
| FI114755B true FI114755B (sv) | 2004-12-15 |
Family
ID=8561984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI20011922A FI114755B (sv) | 2001-10-01 | 2001-10-01 | Förfarande för utformning av en kavitetsstruktur för en SOI-skiva samt en SOI-skivas kavitetsstruktur |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6930366B2 (sv) |
| EP (1) | EP1433199B1 (sv) |
| JP (1) | JP2005504644A (sv) |
| KR (1) | KR100889115B1 (sv) |
| CN (1) | CN1288724C (sv) |
| FI (1) | FI114755B (sv) |
| HK (1) | HK1072497A1 (sv) |
| WO (1) | WO2003030234A1 (sv) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7625603B2 (en) * | 2003-11-14 | 2009-12-01 | Robert Bosch Gmbh | Crack and residue free conformal deposited silicon oxide with predictable and uniform etching characteristics |
| CN101094804B (zh) * | 2004-03-15 | 2011-12-28 | 佐治亚技术研究公司 | 微机电系统封装件及其制造方法 |
| US7292111B2 (en) * | 2004-04-26 | 2007-11-06 | Northrop Grumman Corporation | Middle layer of die structure that comprises a cavity that holds an alkali metal |
| JP4534622B2 (ja) * | 2004-06-23 | 2010-09-01 | ソニー株式会社 | 機能素子およびその製造方法、流体吐出ヘッド、並びに印刷装置 |
| KR100579490B1 (ko) * | 2004-09-20 | 2006-05-15 | 삼성전자주식회사 | 실리콘 절연체 실리콘 구조물 및 그 제조방법 |
| US7303936B2 (en) * | 2005-04-13 | 2007-12-04 | Delphi Technologies, Inc. | Method for forming anti-stiction bumps on a micro-electro mechanical structure |
| CN101456532B (zh) * | 2005-07-04 | 2012-06-20 | 俞度立 | 微涡卷叶片及微涡卷基板的制造方法 |
| DE102008002332B4 (de) * | 2008-06-10 | 2017-02-09 | Robert Bosch Gmbh | Verfahren zur Herstellung einer mikromechanischen Membranstruktur mit Zugang von der Substratrückseite |
| US8877648B2 (en) * | 2009-03-26 | 2014-11-04 | Semprius, Inc. | Methods of forming printable integrated circuit devices by selective etching to suspend the devices from a handling substrate and devices formed thereby |
| KR101298114B1 (ko) * | 2009-06-02 | 2013-08-20 | 한국과학기술원 | Mems 또는 mems 소자의 패키지 및 패키징 방법 |
| DE102010006769A1 (de) * | 2010-02-04 | 2014-10-30 | Dominik Mösch | Verfahren zur Herstellung von kleinen Hohlräumen oder Maskierungen/Strukturen in der Halbleiterindustrie, Mikroelektronik, Mikrosystemtechnik o.ä. anhand von Substanzen mit einem geringen Schmelz- und Siedepunkt |
| DE102010008044B4 (de) | 2010-02-16 | 2016-11-24 | Epcos Ag | MEMS-Mikrofon und Verfahren zur Herstellung |
| CH708827A2 (fr) * | 2013-11-08 | 2015-05-15 | Nivarox Sa | Pièce de micromécanique creuse, à plusieurs niveaux fonctionnels et monobloc en un matériau à base d'un allotrope synthétique du carbone. |
| CN103926034B (zh) * | 2014-03-25 | 2016-08-31 | 慧石（上海）测控科技有限公司 | 硅压力芯片结构设计及工艺 |
| CN103926028B (zh) * | 2014-03-25 | 2016-05-18 | 慧石（上海）测控科技有限公司 | 一种应变片的结构设计及制作工艺 |
| FI128447B (sv) | 2016-04-26 | 2020-05-15 | Teknologian Tutkimuskeskus Vtt Oy | Anordning förknippad med analys av tunnfilmsskikt och förfarande för framställning därav |
| CN114267628A (zh) * | 2021-03-24 | 2022-04-01 | 青岛昇瑞光电科技有限公司 | 超薄绝缘体上硅（soi）衬底基片及其制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2700003B1 (fr) * | 1992-12-28 | 1995-02-10 | Commissariat Energie Atomique | Procédé de fabrication d'un capteur de pression utilisant la technologie silicium sur isolant et capteur obtenu. |
| SE9304145D0 (sv) * | 1993-12-10 | 1993-12-10 | Pharmacia Lkb Biotech | Sätt att tillverka hålrumsstrukturer |
| US5942802A (en) * | 1995-10-09 | 1999-08-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of producing the same |
| EP0822398B1 (en) | 1996-07-31 | 2003-04-23 | STMicroelectronics S.r.l. | Integrated piezoresistive pressure sensor and relative fabrication method |
| US6093330A (en) * | 1997-06-02 | 2000-07-25 | Cornell Research Foundation, Inc. | Microfabrication process for enclosed microstructures |
| WO1999036941A2 (en) * | 1998-01-15 | 1999-07-22 | Cornell Research Foundation, Inc. | Trench isolation for micromechanical devices |
| JP4168497B2 (ja) * | 1998-10-13 | 2008-10-22 | 株式会社デンソー | 半導体力学量センサの製造方法 |
| JP2000124469A (ja) * | 1998-10-13 | 2000-04-28 | Toyota Central Res & Dev Lab Inc | 微小密閉容器及びその製造方法 |
| EP1077475A3 (en) * | 1999-08-11 | 2003-04-02 | Applied Materials, Inc. | Method of micromachining a multi-part cavity |
-
2001
- 2001-10-01 FI FI20011922A patent/FI114755B/sv not_active IP Right Cessation
-
2002
- 2002-09-27 JP JP2003533331A patent/JP2005504644A/ja active Pending
- 2002-09-27 WO PCT/FI2002/000772 patent/WO2003030234A1/en active Application Filing
- 2002-09-27 EP EP02764899.7A patent/EP1433199B1/en not_active Expired - Lifetime
- 2002-09-27 KR KR1020047004728A patent/KR100889115B1/ko active IP Right Grant
- 2002-09-27 CN CNB028194314A patent/CN1288724C/zh not_active Expired - Lifetime
- 2002-09-27 US US10/491,193 patent/US6930366B2/en not_active Expired - Lifetime
-
2005
- 2005-06-21 HK HK05105143A patent/HK1072497A1/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| HK1072497A1 (en) | 2005-08-26 |
| US20040248376A1 (en) | 2004-12-09 |
| JP2005504644A (ja) | 2005-02-17 |
| EP1433199B1 (en) | 2013-11-06 |
| CN1561539A (zh) | 2005-01-05 |
| WO2003030234A1 (en) | 2003-04-10 |
| KR100889115B1 (ko) | 2009-03-16 |
| CN1288724C (zh) | 2006-12-06 |
| EP1433199A1 (en) | 2004-06-30 |
| FI20011922A0 (sv) | 2001-10-01 |
| FI20011922A (sv) | 2003-04-02 |
| KR20040037218A (ko) | 2004-05-04 |
| US6930366B2 (en) | 2005-08-16 |
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