FI111198B - Menetelmä portaan muodostamiseksi substraatin kasvatuspinnalle oksidisuprajohdetta käyttävää suprajohtavaa laitetta varten sekä menetelmä porrastyyppisen Josephson-liitoslaitteen valmistamiseksi - Google Patents
Menetelmä portaan muodostamiseksi substraatin kasvatuspinnalle oksidisuprajohdetta käyttävää suprajohtavaa laitetta varten sekä menetelmä porrastyyppisen Josephson-liitoslaitteen valmistamiseksi Download PDFInfo
- Publication number
- FI111198B FI111198B FI945234A FI945234A FI111198B FI 111198 B FI111198 B FI 111198B FI 945234 A FI945234 A FI 945234A FI 945234 A FI945234 A FI 945234A FI 111198 B FI111198 B FI 111198B
- Authority
- FI
- Finland
- Prior art keywords
- substrate
- chemical etching
- carried out
- process according
- acid
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 139
- 238000000034 method Methods 0.000 title claims description 50
- 239000002887 superconductor Substances 0.000 title claims description 40
- 230000008569 process Effects 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 230000008021 deposition Effects 0.000 title claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 64
- 238000003486 chemical etching Methods 0.000 claims description 52
- 239000010409 thin film Substances 0.000 claims description 44
- 238000005530 etching Methods 0.000 claims description 38
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 36
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 24
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 21
- 229910017604 nitric acid Inorganic materials 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 14
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 11
- 238000010884 ion-beam technique Methods 0.000 claims description 11
- 229910002367 SrTiO Inorganic materials 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 230000001133 acceleration Effects 0.000 claims description 7
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910002244 LaAlO3 Inorganic materials 0.000 claims 2
- 241000237518 Arion Species 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 30
- 239000002253 acid Substances 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- 230000008878 coupling Effects 0.000 description 13
- 238000010168 coupling process Methods 0.000 description 13
- 238000005859 coupling reaction Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 238000011282 treatment Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- QEWYKACRFQMRMB-UHFFFAOYSA-N fluoroacetic acid Chemical compound OC(=O)CF QEWYKACRFQMRMB-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 1
- 101100065878 Caenorhabditis elegans sec-10 gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003200 NdGaO3 Inorganic materials 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 238000000097 high energy electron diffraction Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- SGWCNDDOFLBOQV-UHFFFAOYSA-N oxidanium;fluoride Chemical compound O.F SGWCNDDOFLBOQV-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
- H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5348838A JPH0779021A (ja) | 1993-07-15 | 1993-12-27 | 成膜用基板に段差を形成する方法 |
| JP34883893 | 1993-12-27 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI945234A0 FI945234A0 (fi) | 1994-11-07 |
| FI945234L FI945234L (fi) | 1995-06-28 |
| FI111198B true FI111198B (fi) | 2003-06-13 |
Family
ID=18399727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI945234A FI111198B (fi) | 1993-12-27 | 1994-11-07 | Menetelmä portaan muodostamiseksi substraatin kasvatuspinnalle oksidisuprajohdetta käyttävää suprajohtavaa laitetta varten sekä menetelmä porrastyyppisen Josephson-liitoslaitteen valmistamiseksi |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5560836A (de) |
| EP (1) | EP0660428B1 (de) |
| KR (1) | KR100297531B1 (de) |
| CA (1) | CA2135500C (de) |
| DE (1) | DE69428182T2 (de) |
| DK (1) | DK0660428T3 (de) |
| FI (1) | FI111198B (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998050965A1 (en) * | 1997-05-02 | 1998-11-12 | Superconductor Technologies, Inc. | Method for preparation of substrates for thin film superconductors and improved devices incorporating substrates |
| DE19808778C2 (de) * | 1998-03-03 | 1999-12-09 | Forschungszentrum Juelich Gmbh | Verfahren zur Herstellung eines ABO¶3¶-Substrates mit einer Stufe |
| AUPP590798A0 (en) * | 1998-09-14 | 1998-10-08 | Commonwealth Scientific And Industrial Research Organisation | Method of manufacture of high temperature superconductors |
| US6734699B1 (en) | 1999-07-14 | 2004-05-11 | Northrop Grumman Corporation | Self-clocked complementary logic |
| US7015499B1 (en) | 1999-12-01 | 2006-03-21 | D-Wave Systems, Inc. | Permanent readout superconducting qubit |
| US6459097B1 (en) * | 2000-01-07 | 2002-10-01 | D-Wave Systems Inc. | Qubit using a Josephson junction between s-wave and d-wave superconductors |
| US6627915B1 (en) | 2000-08-11 | 2003-09-30 | D-Wave Systems, Inc. | Shaped Josephson junction qubits |
| US6504172B2 (en) | 2001-03-16 | 2003-01-07 | D-Wave Systems, Inc. | Superconducting dot/anti-dot flux qubit based on time-reversal symmetry breaking effects |
| US7002366B2 (en) * | 2003-08-20 | 2006-02-21 | Northrop Grumman Corporation | Superconducting constant current source |
| US20050062131A1 (en) * | 2003-09-24 | 2005-03-24 | Murduck James Matthew | A1/A1Ox/A1 resistor process for integrated circuits |
| DE602007002280D1 (de) * | 2007-04-19 | 2009-10-15 | Straumann Holding Ag | Verfahren zur Bereitstellung einer Topographie auf der Oberfläche eines Zahnimplantats |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0810757B2 (ja) * | 1987-05-25 | 1996-01-31 | 松下電子工業株式会社 | 半導体装置の製造方法 |
| US5077266A (en) * | 1988-09-14 | 1991-12-31 | Hitachi, Ltd. | Method of forming weak-link josephson junction, and superconducting device employing the junction |
| JPH05251771A (ja) * | 1991-12-02 | 1993-09-28 | Sumitomo Electric Ind Ltd | 人工粒界型ジョセフソン接合素子およびその作製方法 |
| JP2730368B2 (ja) * | 1991-12-10 | 1998-03-25 | 住友電気工業株式会社 | 超電導電界効果型素子およびその作製方法 |
| JPH05335638A (ja) * | 1992-05-29 | 1993-12-17 | Sumitomo Electric Ind Ltd | ジョセフソン接合構造体およびその作製方法 |
| KR100264006B1 (ko) * | 1993-11-29 | 2000-08-16 | 이형도 | 고온초전도 조셉슨소자의 제조방법 |
| US5780343A (en) * | 1995-12-20 | 1998-07-14 | National Semiconductor Corporation | Method of producing high quality silicon surface for selective epitaxial growth of silicon |
-
1994
- 1994-11-07 FI FI945234A patent/FI111198B/fi not_active IP Right Cessation
- 1994-11-08 EP EP94402527A patent/EP0660428B1/de not_active Expired - Lifetime
- 1994-11-08 DE DE69428182T patent/DE69428182T2/de not_active Expired - Fee Related
- 1994-11-08 DK DK94402527T patent/DK0660428T3/da active
- 1994-11-09 US US08/338,094 patent/US5560836A/en not_active Expired - Fee Related
- 1994-11-09 CA CA002135500A patent/CA2135500C/en not_active Expired - Fee Related
- 1994-11-18 KR KR1019940030354A patent/KR100297531B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| FI945234A0 (fi) | 1994-11-07 |
| EP0660428A3 (de) | 1997-07-16 |
| CA2135500A1 (en) | 1995-06-28 |
| EP0660428A2 (de) | 1995-06-28 |
| DK0660428T3 (da) | 2001-12-27 |
| KR100297531B1 (ko) | 2001-10-24 |
| EP0660428B1 (de) | 2001-09-05 |
| CA2135500C (en) | 2000-05-02 |
| US5560836A (en) | 1996-10-01 |
| FI945234L (fi) | 1995-06-28 |
| DE69428182D1 (de) | 2001-10-11 |
| DE69428182T2 (de) | 2002-03-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MA | Patent expired |