ES8704037A1 - Perfeccionamientos en una estructura de transistor de semi- conductor de oxido metalico - Google Patents

Perfeccionamientos en una estructura de transistor de semi- conductor de oxido metalico

Info

Publication number
ES8704037A1
ES8704037A1 ES546353A ES546353A ES8704037A1 ES 8704037 A1 ES8704037 A1 ES 8704037A1 ES 546353 A ES546353 A ES 546353A ES 546353 A ES546353 A ES 546353A ES 8704037 A1 ES8704037 A1 ES 8704037A1
Authority
ES
Spain
Prior art keywords
production
mos transistors
layer electrode
cavity
schottky layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES546353A
Other languages
English (en)
Other versions
ES546353A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of ES546353A0 publication Critical patent/ES546353A0/es
Publication of ES8704037A1 publication Critical patent/ES8704037A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66643—Lateral single gate silicon transistors with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

MODIFICACIONES EN UNA ESTRUCTURA DE TRANSISTOR DE SEMICONDUCTOR DE OXIDO METALICO. CONSISTENTES EN: EXTENDER AL ELECTRODO DE ALIMENTACION DEL TRANSISTOR EN EL INTERIOR DE UNA CAVIDAD, PARA LLENARLA Y REBAJAR LA CAPA AISLANTE DE PARED LATERAL; TERMINAR AL ELECTRODO DE ALIMENTACION DEL TRANSISTOR EN UNA RELACION PRESELECCIONADA CON EL BORDE DE LA CAPA DE ELECTRODO DE PUERTA; CONFORMAR AL CUERPO SEMICONDUCTOR EN SILICIO; DOTAR A LA CAPA AISLANTE DE PUERTA CON DIOXIDO DE SILICIO; REALIZAR LA CAPA DE ELECTRODO DE PUERTA COMO SILICIO POLICRISTALINO; PRODUCIR A LA CAPA DE ELECTRODO DE ALIMENTACION EN UN SILICIURO METALICO; Y CONFORMAR A LA CAPA AISLANTE DE PARED LATERAL COMO DIOXIDO DE SILICIO.
ES546353A 1984-08-24 1985-08-22 Perfeccionamientos en una estructura de transistor de semi- conductor de oxido metalico Expired ES8704037A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64395684A 1984-08-24 1984-08-24

Publications (2)

Publication Number Publication Date
ES546353A0 ES546353A0 (es) 1987-03-01
ES8704037A1 true ES8704037A1 (es) 1987-03-01

Family

ID=24582832

Family Applications (1)

Application Number Title Priority Date Filing Date
ES546353A Expired ES8704037A1 (es) 1984-08-24 1985-08-22 Perfeccionamientos en una estructura de transistor de semi- conductor de oxido metalico

Country Status (5)

Country Link
EP (1) EP0191841A1 (es)
JP (1) JPS62500061A (es)
KR (1) KR870002659A (es)
ES (1) ES8704037A1 (es)
WO (1) WO1986001641A1 (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5663584A (en) * 1994-05-31 1997-09-02 Welch; James D. Schottky barrier MOSFET systems and fabrication thereof
US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
JP3833903B2 (ja) * 2000-07-11 2006-10-18 株式会社東芝 半導体装置の製造方法
JP2002184716A (ja) * 2000-12-11 2002-06-28 Sharp Corp 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141022A (en) * 1977-09-12 1979-02-20 Signetics Corporation Refractory metal contacts for IGFETS
FR2480371A1 (fr) * 1980-04-15 1981-10-16 Ferodo Sa Commande hydraulique assistee, notamment pour embrayages et freins
US4485550A (en) * 1982-07-23 1984-12-04 At&T Bell Laboratories Fabrication of schottky-barrier MOS FETs

Also Published As

Publication number Publication date
ES546353A0 (es) 1987-03-01
KR870002659A (ko) 1987-04-06
EP0191841A1 (en) 1986-08-27
JPS62500061A (ja) 1987-01-08
WO1986001641A1 (en) 1986-03-13

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