ES8609818A1 - Procedimiento para la conexion a tierra de dispositivos de un solo plano y de circuitos integrados. - Google Patents

Procedimiento para la conexion a tierra de dispositivos de un solo plano y de circuitos integrados.

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Publication number
ES8609818A1
ES8609818A1 ES544404A ES544404A ES8609818A1 ES 8609818 A1 ES8609818 A1 ES 8609818A1 ES 544404 A ES544404 A ES 544404A ES 544404 A ES544404 A ES 544404A ES 8609818 A1 ES8609818 A1 ES 8609818A1
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ES
Spain
Prior art keywords
integrated circuits
contacts
fets
devices
flat devices
Prior art date
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Expired
Application number
ES544404A
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English (en)
Other versions
ES544404A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telettra Laboratori di Telefonia Elettronica e Radio SpA
Telettra SpA
Original Assignee
Telettra Telefonia Elettronica e Radio SpA
Telettra Laboratori di Telefonia Elettronica e Radio SpA
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Publication date
Application filed by Telettra Telefonia Elettronica e Radio SpA, Telettra Laboratori di Telefonia Elettronica e Radio SpA filed Critical Telettra Telefonia Elettronica e Radio SpA
Publication of ES544404A0 publication Critical patent/ES544404A0/es
Publication of ES8609818A1 publication Critical patent/ES8609818A1/es
Expired legal-status Critical Current

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    • H01L21/746—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts for AIII-BV integrated circuits
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    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PROCEDIMIENTO PARA LA CONEXION A TIERRA DE DISPOSITIVOS DE UN SOLO PLANO Y DE CIRCUITOS INTEGRADOS. SOBRE UN FONDO DE ARSENIURO DE GALIO SE HAN DISPUESTO TRES CONTACTOS: S(SOURCE), D(DRAIN) Y G(GATE). SOBRE UN SOPORTE RIGIDO SE FIJA UN WAFER DE ARSENIURO DE GALIO (GAAS) QUE SUSTENTA MAS DISPOSITIVOS DE UN SOLO PLANO (CHIPS), MEDIANTE PEGADURA. LA ELIMINACION POSTERIOR DEL ARSENIURO DE GALIO Y LA ACCESIBILIDAD DE LOS CONTACTOS DE S SE EFECTUA CON UN ATAQUE QUIMICO SELECTIVO. EL MATERIAL <FOTORESIST> APLICADO SOBRE EL DORSO DEL <WAFER> Y SOBRE EL QUE SE TRAZAN LAS LINEAS DE SEPARACION O CAMPOS DE LOS DISPOSITIVOS INDIVIDUALES, SE ELIMINA MEDIANTE DISOLVENTES ORGANICOS (ACETONA). LA METALIZACION DEL DORSO DE LOS DISPOSITIVOS INDIVIDUALES SE HACE CON ORO ELECROLITICO. LA EXTRACCION DEL SOPORTE Y LA SEPARACION DE LOS DISPOSITIVOS INDIVIDUALES SE REALIZA CON DISOLVENTES ORGANICOS TAMBIEN (TRIELINA). EL MONTAJE DE LOS CHIPS SE EFECTUA CON UNA ALEACION DE AUSN O CON RESINAS CARGADAS DE PLATA.
ES544404A 1984-06-22 1985-06-21 Procedimiento para la conexion a tierra de dispositivos de un solo plano y de circuitos integrados. Expired ES8609818A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT21553/84A IT1175541B (it) 1984-06-22 1984-06-22 Procedimento per la connessione a terra di dispositivi planari e circuiti integrati e prodotti cosi' ottenuti

Publications (2)

Publication Number Publication Date
ES544404A0 ES544404A0 (es) 1986-09-01
ES8609818A1 true ES8609818A1 (es) 1986-09-01

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US (1) US4700467A (es)
JP (1) JPS61111582A (es)
DE (1) DE3522168C2 (es)
ES (1) ES8609818A1 (es)
FR (1) FR2566581B1 (es)
GB (1) GB2161650B (es)
IT (1) IT1175541B (es)

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Publication number Priority date Publication date Assignee Title
FR2684801B1 (fr) * 1991-12-06 1997-01-24 Picogiga Sa Procede de realisation de composants semiconducteurs, notamment sur gaas ou inp, avec recuperation du substrat par voie chimique.
US5268065A (en) * 1992-12-21 1993-12-07 Motorola, Inc. Method for thinning a semiconductor wafer
JP3287279B2 (ja) 1997-09-25 2002-06-04 日本電気株式会社 半導体チップ、および該半導体チップが実装された半導体装置
WO2002043118A2 (en) * 2000-11-02 2002-05-30 California Institute Of Technology Wafer-level transfer of membranes in semiconductor processing
US7268081B2 (en) * 2000-11-02 2007-09-11 California Institute Of Technology Wafer-level transfer of membranes with gas-phase etching and wet etching methods
KR100407472B1 (ko) * 2001-06-29 2003-11-28 삼성전자주식회사 트렌치가 형성된 상부 칩을 구비하는 칩 적층형 패키지소자 및 그 제조 방법

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1933731C3 (de) * 1968-07-05 1982-03-25 Honeywell Information Systems Italia S.p.A., Caluso, Torino Verfahren zum Herstellen einer integrierten Halbleiterschaltung
US3771219A (en) * 1970-02-05 1973-11-13 Sharp Kk Method for manufacturing semiconductor device
GB1601059A (en) * 1978-05-31 1981-10-21 Secr Defence Fet devices and their fabrication
GB1602498A (en) * 1978-05-31 1981-11-11 Secr Defence Fet devices and their fabrication
JPS55545A (en) * 1979-02-13 1980-01-05 Canon Inc Production of electrophotographic photoreceptor
IT8048031A0 (it) * 1979-04-09 1980-02-28 Raytheon Co Perfezionamento nei dispositivi a semiconduttore ad effetto di campo
JPS5749252A (en) * 1980-09-09 1982-03-23 Matsushita Electronics Corp Manufacture of semiconductor device
JPS5817626A (ja) * 1981-07-13 1983-02-01 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン 低温度ダイ取り付け方法

Also Published As

Publication number Publication date
IT8421553A1 (it) 1985-12-22
JPS61111582A (ja) 1986-05-29
GB2161650B (en) 1988-07-13
FR2566581B1 (fr) 1989-12-29
US4700467A (en) 1987-10-20
GB2161650A (en) 1986-01-15
ES544404A0 (es) 1986-09-01
DE3522168A1 (de) 1986-01-16
DE3522168C2 (de) 1994-05-11
IT8421553A0 (it) 1984-06-22
IT1175541B (it) 1987-07-01
GB8515479D0 (en) 1985-07-24
FR2566581A1 (fr) 1985-12-27

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