ES8604362A1 - Procedimiento para la obtencion deuna plancha de impresion planografica. - Google Patents
Procedimiento para la obtencion deuna plancha de impresion planografica.Info
- Publication number
- ES8604362A1 ES8604362A1 ES84533562A ES533562A ES8604362A1 ES 8604362 A1 ES8604362 A1 ES 8604362A1 ES 84533562 A ES84533562 A ES 84533562A ES 533562 A ES533562 A ES 533562A ES 8604362 A1 ES8604362 A1 ES 8604362A1
- Authority
- ES
- Spain
- Prior art keywords
- group
- hydrogen atom
- light
- material prepared
- alkyl group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Printing Plates And Materials Therefor (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Materials For Photolithography (AREA)
- Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
- Color Printing (AREA)
- Developing Agents For Electrophotography (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
- Holo Graphy (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
PROCEDIMIENTO PARA LA OBTENCION DE UNA PLANCHA DE IMPRESION PLANOGRAFICA. COMPRENDE LAS SIGUIENTES OPERACIONES: PRIMERA, SE APLICA SOBRE UN PORTADOR LITOGRAFICO DE CAPAS UNA SOLUCION DE UNA MEZCLA FOTOSENSIBLE, FORMADA POR UN COMPUESTO FOTOSENSIBLE Y POR UN LIGANTE INSOLUBLE EN AGUA Y SOLUBLE EN SOLUCIONES ACUOSAS ALCALINAS, SIENDO DICHO LIGANTE UN PRODUCTO DE POLICONDENSACION DE UN FENOL DE FORMULA GENERAL (I) Y UN COMPUESTO DE FORMULA GENERAL (II); SEGUNDA, SE SECA LA SOLUCION APLICADA PARA OBTENER UNA CAPA FOTOSENSIBLE DELGADA Y UNIFORME; TERCERA, EL MATERIAL DE COPIA ASI OBTENIDO SE EXPONE A LA IMAGEN CON LUZ ACTINICA; CUARTA, LAS AREAS SIN IMAGEN DE LA CAPA SE ELIMINAN MEDIANTE UNA SOLUCION DE REVELADO ACUOSA-ALCALINA; Y POR ULTIMO, SE CALIENTA LA PLANCHA DE IMPRESION REVELADA PARA ENDURECER LA MATRIZ DE IMPRESION FORMADA.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3323343A DE3323343A1 (de) | 1983-06-29 | 1983-06-29 | Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial |
Publications (2)
Publication Number | Publication Date |
---|---|
ES533562A0 ES533562A0 (es) | 1986-01-16 |
ES8604362A1 true ES8604362A1 (es) | 1986-01-16 |
Family
ID=6202631
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES84533562A Expired ES8604362A1 (es) | 1983-06-29 | 1984-06-20 | Procedimiento para la obtencion deuna plancha de impresion planografica. |
Country Status (10)
Country | Link |
---|---|
US (1) | US4642282A (es) |
EP (1) | EP0131780B1 (es) |
JP (1) | JPS6021046A (es) |
AT (1) | ATE23409T1 (es) |
AU (1) | AU569530B2 (es) |
BR (1) | BR8403198A (es) |
CA (1) | CA1246378A (es) |
DE (2) | DE3323343A1 (es) |
ES (1) | ES8604362A1 (es) |
ZA (1) | ZA844740B (es) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3442756A1 (de) * | 1984-11-23 | 1986-05-28 | Hoechst Ag, 6230 Frankfurt | Strahlungsempfindliches gemisch, daraus hergestelltes aufzeichnungsmaterial und verfahren zur herstellung von waermebestaendigen reliefaufzeichnungen |
JPH07109510B2 (ja) * | 1985-04-02 | 1995-11-22 | 三菱化学株式会社 | ポジ型フォトレジスト組成物 |
JPS62123444A (ja) * | 1985-08-07 | 1987-06-04 | Japan Synthetic Rubber Co Ltd | ポジ型感放射線性樹脂組成物 |
US5256522A (en) * | 1985-08-12 | 1993-10-26 | Hoechst Celanese Corporation | Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing |
US5217840A (en) * | 1985-08-12 | 1993-06-08 | Hoechst Celanese Corporation | Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom |
US4929536A (en) * | 1985-08-12 | 1990-05-29 | Hoechst Celanese Corporation | Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing |
US4931381A (en) * | 1985-08-12 | 1990-06-05 | Hoechst Celanese Corporation | Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment |
JPS6267181U (es) * | 1985-10-17 | 1987-04-25 | ||
DE3730785A1 (de) * | 1987-09-13 | 1989-03-23 | Hoechst Ag | Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
DE3730787A1 (de) * | 1987-09-13 | 1989-03-23 | Hoechst Ag | Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
US4837121A (en) * | 1987-11-23 | 1989-06-06 | Olin Hunt Specialty Products Inc. | Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin |
US4970287A (en) * | 1987-11-23 | 1990-11-13 | Olin Hunt Specialty Products Inc. | Thermally stable phenolic resin compositions with ortho, ortho methylene linkage |
US5024921A (en) * | 1987-11-23 | 1991-06-18 | Ocg Microelectronic Materials, Inc. | Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin used in a method of forming a positive photoresist image |
US4920028A (en) * | 1988-03-31 | 1990-04-24 | Morton Thiokol, Inc. | High contrast high thermal stability positive photoresists with mixed cresol and hydroxybenzaldehyde prepared novolak and photosensitive diazoquinone |
US4997734A (en) * | 1988-08-02 | 1991-03-05 | Morton International, Inc. | Method of forming a thermally stable mixed aldehyde novolak resin containing resist pattern and that pattern on a substrate |
US5130409A (en) * | 1988-04-22 | 1992-07-14 | Morton International, Inc. | Mixed aldehyde novolak resins useful as high contrast high thermal stability positive photoresists |
JPH01293340A (ja) * | 1988-05-20 | 1989-11-27 | Japan Synthetic Rubber Co Ltd | 感放射線性樹脂組成物 |
US5002851A (en) * | 1988-05-31 | 1991-03-26 | Olin Hunt Specialty Products, Inc. | Light sensitive composition with o-quinone diazide and phenolic novolak resin made using methylol substituted trihydroxybenzophenone as reactant |
US5239122A (en) * | 1988-05-31 | 1993-08-24 | Ocg Microelectronic Materials, Inc. | Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions |
US5177172A (en) * | 1988-05-31 | 1993-01-05 | Ocg Microelectronic Materials, Inc. | Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions |
US5254440A (en) * | 1988-05-31 | 1993-10-19 | Ocg Microelectronic Materials, Inc. | Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions and processes of forming resist images |
US5178986A (en) * | 1988-10-17 | 1993-01-12 | Shipley Company Inc. | Positive photoresist composition with naphthoquinonediazidesulfonate of oligomeric phenol |
US5753406A (en) * | 1988-10-18 | 1998-05-19 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive resin composition |
US4992356A (en) * | 1988-12-27 | 1991-02-12 | Olin Hunt Specialty Products Inc. | Process of developing a radiation imaged product with trinuclear novolak oligomer having o-naphthoquinone diazide sulfonyl group |
US4992596A (en) * | 1988-12-27 | 1991-02-12 | Olin Hunt Specialty Products Inc. | Selected trinuclear novolak oligomers and their use in photoactive compounds and radiation sensitive mixtures |
US4957846A (en) * | 1988-12-27 | 1990-09-18 | Olin Hunt Specialty Products Inc. | Radiation sensitive compound and mixtures with trinuclear novolak oligomer with o-naphthoquinone diazide sulfonyl group |
JPH02254450A (ja) * | 1989-03-29 | 1990-10-15 | Toshiba Corp | レジスト |
US5288587A (en) * | 1989-09-05 | 1994-02-22 | Sumitomo Chemical Co., Ltd. | Radiation-sensitive positive resist composition comprising an o-quinone diazide, an alkali-soluble resin and a polyphenol compound |
WO1991004512A1 (en) * | 1989-09-07 | 1991-04-04 | Ocg Microelectronic Materials, Inc. | Selected block copolymer novolak binder resins and their use in radiation-sensitive compositions |
US5188921A (en) * | 1989-09-07 | 1993-02-23 | Ocg Microelectronic Materials, Inc. | Selected block copolymer novolak binder resins in radiation-sensitive resist compositions |
US5234795A (en) * | 1989-09-07 | 1993-08-10 | Ocg Microelectronic Materials, Inc. | Process of developing an image-wise exposed resist-coated substrate |
US5235022A (en) * | 1989-09-07 | 1993-08-10 | Ocg Microelectronic Materials, Inc. | Selected block copolymer novolak binder resins |
US5196289A (en) * | 1989-09-07 | 1993-03-23 | Ocg Microelectronic Materials, Inc. | Selected block phenolic oligomers and their use in radiation-sensitive resist compositions |
US5232819A (en) * | 1989-09-07 | 1993-08-03 | Ocg Microelectronic Materials, Inc. | Selected block phenolic oligomers and their use in phenolic resin compositions and in radiation-sensitive resist compositions |
AU6140790A (en) * | 1989-09-07 | 1991-04-08 | Ocg Microelectronic Materials, Inc. | Selected block phenolic oligomers and their use in phenolic resin compositions and in radiation-sensitive resist compositions |
US5798422A (en) * | 1994-08-25 | 1998-08-25 | Mitsui Toatsu Chemicals, Inc. | Aromatic hydroxycarboxylic acid resins and their use |
US5652081A (en) * | 1995-09-20 | 1997-07-29 | Fuji Photo Film Co., Ltd. | Positive working photoresist composition |
US6103443A (en) * | 1997-11-21 | 2000-08-15 | Clariant Finance Lmited | Photoresist composition containing a novel polymer |
US20050037293A1 (en) * | 2000-05-08 | 2005-02-17 | Deutsch Albert S. | Ink jet imaging of a lithographic printing plate |
US20040025730A1 (en) * | 2002-08-06 | 2004-02-12 | Fromson Howard A. | Method for imaging a lithographic printing plate |
WO2012090965A1 (ja) * | 2010-12-27 | 2012-07-05 | 旭化成イーマテリアルズ株式会社 | アルカリ現像用感光性フェノール樹脂組成物、硬化レリーフパターン及び半導体の製造方法、並びにビフェニルジイルトリヒドロキシベンゼン樹脂 |
KR101769190B1 (ko) | 2011-12-09 | 2017-08-17 | 아사히 가세이 이-매터리얼즈 가부시키가이샤 | 감광성 수지 조성물, 경화 릴리프 패턴의 제조 방법, 반도체 장치 및 표시체 장치 |
JP6365952B2 (ja) * | 2014-03-06 | 2018-08-01 | エルジー・ケム・リミテッド | オフセット印刷組成物、それを用いた印刷方法およびオフセット印刷組成物を含むパターン |
KR101754901B1 (ko) * | 2014-05-16 | 2017-07-06 | 제일모직 주식회사 | 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법 |
KR101852457B1 (ko) * | 2015-11-12 | 2018-04-26 | 삼성에스디아이 주식회사 | 신규한 중합체를 포함하는 수지 조성물 및 이를 이용한 유기막 |
JP6809200B2 (ja) * | 2016-12-19 | 2021-01-06 | Dic株式会社 | エポキシ樹脂、硬化性樹脂組成物及びその硬化物 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL255517A (es) * | 1959-09-04 | |||
GB1150203A (en) * | 1966-07-27 | 1969-04-30 | Midland Silicones Ltd | Polymeric Compositions |
US3849392A (en) * | 1969-05-20 | 1974-11-19 | Kalle Ag | Process for the production of polycondensation products of aromatic diazonium compounds |
BE789196A (fr) * | 1971-09-25 | 1973-03-22 | Kalle Ag | Matiere a copier photosensible |
DE2718254C3 (de) * | 1977-04-25 | 1980-04-10 | Hoechst Ag, 6000 Frankfurt | Strahlungsempfindliche Kopiermasse |
DE2834059A1 (de) * | 1978-08-03 | 1980-02-14 | Hoechst Ag | Lichtempfindliches kopiermaterial und verfahren zu seiner herstellung |
JPS561044A (en) * | 1979-06-16 | 1981-01-08 | Konishiroku Photo Ind Co Ltd | Photosensitive composition |
DE3022473A1 (de) * | 1980-06-14 | 1981-12-24 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches kopiermaterial und verfahren zu seiner herstellung |
DE3039926A1 (de) * | 1980-10-23 | 1982-05-27 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial |
DE3040156A1 (de) * | 1980-10-24 | 1982-06-03 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches gemisch und damit hergestelltes lichtempfindliches kopiermaterial |
EP0054258B1 (en) * | 1980-12-17 | 1986-03-05 | Konica Corporation | Photosensitive compositions |
AU543462B2 (en) * | 1981-10-23 | 1985-04-18 | Hoechst A.G. | Napthoquinone diazide sulphonic acid esters and light sensitive compositions containing them |
-
1983
- 1983-06-29 DE DE3323343A patent/DE3323343A1/de not_active Withdrawn
-
1984
- 1984-06-19 CA CA000456921A patent/CA1246378A/en not_active Expired
- 1984-06-20 ES ES84533562A patent/ES8604362A1/es not_active Expired
- 1984-06-20 DE DE8484107074T patent/DE3461229D1/de not_active Expired
- 1984-06-20 AT AT84107074T patent/ATE23409T1/de not_active IP Right Cessation
- 1984-06-20 EP EP84107074A patent/EP0131780B1/de not_active Expired
- 1984-06-20 US US06/622,446 patent/US4642282A/en not_active Expired - Fee Related
- 1984-06-22 ZA ZA844740A patent/ZA844740B/xx unknown
- 1984-06-27 AU AU29923/84A patent/AU569530B2/en not_active Ceased
- 1984-06-28 BR BR8403198A patent/BR8403198A/pt not_active IP Right Cessation
- 1984-06-28 JP JP59132170A patent/JPS6021046A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
AU2992384A (en) | 1985-01-03 |
ZA844740B (en) | 1985-02-27 |
EP0131780B1 (de) | 1986-11-05 |
JPH0455298B2 (es) | 1992-09-02 |
JPS6021046A (ja) | 1985-02-02 |
BR8403198A (pt) | 1985-06-11 |
US4642282A (en) | 1987-02-10 |
ES533562A0 (es) | 1986-01-16 |
ATE23409T1 (de) | 1986-11-15 |
DE3461229D1 (en) | 1986-12-11 |
DE3323343A1 (de) | 1985-01-10 |
EP0131780A1 (de) | 1985-01-23 |
AU569530B2 (en) | 1988-02-04 |
CA1246378A (en) | 1988-12-13 |
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