ES8600594A1 - Un dispositivo sensor de imagenes. - Google Patents

Un dispositivo sensor de imagenes.

Info

Publication number
ES8600594A1
ES8600594A1 ES537816A ES537816A ES8600594A1 ES 8600594 A1 ES8600594 A1 ES 8600594A1 ES 537816 A ES537816 A ES 537816A ES 537816 A ES537816 A ES 537816A ES 8600594 A1 ES8600594 A1 ES 8600594A1
Authority
ES
Spain
Prior art keywords
image sensor
sensor device
channel regions
blooming
semiconductor zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES537816A
Other languages
English (en)
Other versions
ES537816A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES8600594A1 publication Critical patent/ES8600594A1/es
Publication of ES537816A0 publication Critical patent/ES537816A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)

Abstract

DISPOSITIVO SENSOR DE IMAGEN.CONSTA DE: UN SUSTRATO SEMICONDUCTOR (1) DE UN PRIMER TIPO DE CONDUCTIVIDAD CON UNAS REGIONES (7) DE CAUDAL, DIRIGIDAS PERPENDICULARMENTE A UNA SISTEMA DE ELECTRODO (3, 4, 5, 6), EN DONDE LA CARGA ES RECOGIDA Y TRANSPORTADA, SEPARADAS MUTUAMENTE POR ZONAS (8) DE SEPARACION DE CANALES DEL SEGUNDO TIPO DE CONDUCTIVIDAD A LA SUPERFICIE (2) Y CONTIGUAS A UNA ZONA SEMICONDUCTORA (9) DEL SEGUNDO TIPO DE CONDUCTIVIDAD (9) DEL SEGUNDO TIPO DE CONDUCTIVIDAD Y UNOS ELECTRODOS (3, 4, 5, 6) AISLADOS DE UNA SUPERFICIE (2) DE UN PRIMER TIPO DE CONDUCTIVIDAD MEDIANTE UNA CAPA AISLANTE (10).
ES537816A 1983-11-24 1984-11-21 Un dispositivo sensor de imagenes. Granted ES537816A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8304035A NL8304035A (nl) 1983-11-24 1983-11-24 Blooming ongevoelige beeldopneeminrichting en werkwijze ter vervaardiging daarvan.

Publications (2)

Publication Number Publication Date
ES8600594A1 true ES8600594A1 (es) 1985-09-16
ES537816A0 ES537816A0 (es) 1985-09-16

Family

ID=19842766

Family Applications (1)

Application Number Title Priority Date Filing Date
ES537816A Granted ES537816A0 (es) 1983-11-24 1984-11-21 Un dispositivo sensor de imagenes.

Country Status (13)

Country Link
US (2) US4654682A (es)
EP (1) EP0143496B1 (es)
JP (1) JPS60134569A (es)
KR (1) KR920007785B1 (es)
AT (1) ATE32287T1 (es)
AU (1) AU580272B2 (es)
CA (1) CA1218443A (es)
DE (1) DE3469113D1 (es)
ES (1) ES537816A0 (es)
HK (1) HK82891A (es)
IE (1) IE56332B1 (es)
NL (1) NL8304035A (es)
SG (1) SG51290G (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3586452T2 (de) * 1984-10-18 1993-03-18 Matsushita Electronics Corp Festkoerperbildsensor und verfahren zu seiner herstellung.
FR2633455B1 (fr) * 1988-06-24 1990-08-24 Thomson Csf Matrice photosensible a transfert de trame d.t.c., avec un systeme antieblouissement vertical, et procede de fabrication d'une telle matrice
NL9000776A (nl) * 1990-04-03 1991-11-01 Philips Nv Werkwijze ter vervaardiging van een ladingsgekoppelde beeldopneeminrichting, alsmede beeldopneeminrichting verkregen door deze werkwijze.
JPH04335573A (ja) * 1991-05-10 1992-11-24 Sony Corp Ｃｃｄ固体撮像素子
JPH04373274A (ja) * 1991-06-21 1992-12-25 Sony Corp Ｃｃｄ固体撮像素子
DE69329100T2 (de) * 1992-12-09 2001-03-22 Koninkl Philips Electronics Nv Ladungsgekoppelte Anordnung
JP3276005B2 (ja) * 1998-12-07 2002-04-22 日本電気株式会社 電荷結合素子及びその製造法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4025943A (en) * 1976-03-22 1977-05-24 Canadian Patents And Development Limited Photogeneration channel in front illuminated solid state silicon imaging devices
US4181542A (en) * 1976-10-25 1980-01-01 Nippon Gakki Seizo Kabushiki Kaisha Method of manufacturing junction field effect transistors
CH616024A5 (es) * 1977-05-05 1980-02-29 Centre Electron Horloger
US4173064A (en) * 1977-08-22 1979-11-06 Texas Instruments Incorporated Split gate electrode, self-aligned antiblooming structure and method of making same
GB2023340B (en) * 1978-06-01 1982-09-02 Mitsubishi Electric Corp Integrated circuits
US4344222A (en) * 1979-05-21 1982-08-17 Ibm Corporation Bipolar compatible electrically alterable read-only memory
GB2054961B (en) * 1979-07-26 1983-07-20 Gen Electric Co Ltd Excess charge removal oin charge transfer devices
US4322882A (en) * 1980-02-04 1982-04-06 Fairchild Camera & Instrument Corp. Method for making an integrated injection logic structure including a self-aligned base contact
NL8000998A (nl) * 1980-02-19 1981-09-16 Philips Nv Vaste stof opneemcamera met een halfgeleidende photogevoelige trefplaat.
US4450464A (en) * 1980-07-23 1984-05-22 Matsushita Electric Industrial Co., Ltd. Solid state area imaging apparatus having a charge transfer arrangement
US4373252A (en) * 1981-02-17 1983-02-15 Fairchild Camera & Instrument Method for manufacturing a semiconductor structure having reduced lateral spacing between buried regions
US4396438A (en) * 1981-08-31 1983-08-02 Rca Corporation Method of making CCD imagers
US4406052A (en) * 1981-11-12 1983-09-27 Gte Laboratories Incorporated Non-epitaxial static induction transistor processing

Also Published As

Publication number Publication date
IE842991L (en) 1985-05-24
KR850004002A (ko) 1985-06-29
ATE32287T1 (de) 1988-02-15
ES537816A0 (es) 1985-09-16
SG51290G (en) 1990-08-31
JPS60134569A (ja) 1985-07-17
CA1218443A (en) 1987-02-24
US4697329A (en) 1987-10-06
IE56332B1 (en) 1991-06-19
EP0143496A1 (en) 1985-06-05
DE3469113D1 (en) 1988-03-03
EP0143496B1 (en) 1988-01-27
HK82891A (en) 1991-11-01
JPH0527992B2 (es) 1993-04-22
KR920007785B1 (ko) 1992-09-17
NL8304035A (nl) 1985-06-17
AU580272B2 (en) 1989-01-12
US4654682A (en) 1987-03-31
AU3583784A (en) 1985-05-30

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