GB2054961B - Excess charge removal oin charge transfer devices - Google Patents

Excess charge removal oin charge transfer devices

Info

Publication number
GB2054961B
GB2054961B GB8024490A GB8024490A GB2054961B GB 2054961 B GB2054961 B GB 2054961B GB 8024490 A GB8024490 A GB 8024490A GB 8024490 A GB8024490 A GB 8024490A GB 2054961 B GB2054961 B GB 2054961B
Authority
GB
United Kingdom
Prior art keywords
oin
transfer devices
charge
excess
removal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8024490A
Other versions
GB2054961A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB8024490A priority Critical patent/GB2054961B/en
Publication of GB2054961A publication Critical patent/GB2054961A/en
Application granted granted Critical
Publication of GB2054961B publication Critical patent/GB2054961B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1091—Substrate region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/7685—Three-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
GB8024490A 1979-07-26 1980-07-25 Excess charge removal oin charge transfer devices Expired GB2054961B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8024490A GB2054961B (en) 1979-07-26 1980-07-25 Excess charge removal oin charge transfer devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB7926125 1979-07-26
GB8024490A GB2054961B (en) 1979-07-26 1980-07-25 Excess charge removal oin charge transfer devices

Publications (2)

Publication Number Publication Date
GB2054961A GB2054961A (en) 1981-02-18
GB2054961B true GB2054961B (en) 1983-07-20

Family

ID=26272340

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8024490A Expired GB2054961B (en) 1979-07-26 1980-07-25 Excess charge removal oin charge transfer devices

Country Status (1)

Country Link
GB (1) GB2054961B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3168333D1 (en) * 1980-09-19 1985-02-28 Nec Corp Semiconductor photoelectric converter
NL8304035A (en) * 1983-11-24 1985-06-17 Philips Nv BLOOMING INSENSITIVE IMAGE RECORDING DEVICE AND METHOD OF MANUFACTURE THEREOF.
JPH0681280B2 (en) * 1984-06-06 1994-10-12 日本電気株式会社 Driving method for charge-coupled device
JPS6156583A (en) * 1984-08-27 1986-03-22 Sharp Corp Solid-state image pickup device
JPS6157181A (en) * 1984-08-28 1986-03-24 Sharp Corp Solid-state image pickup device
JPH0644578B2 (en) * 1984-12-21 1994-06-08 三菱電機株式会社 Charge transfer device
WO1989005039A1 (en) * 1987-11-16 1989-06-01 Eastman Kodak Company Blooming control in ccd image sensors
US5325412A (en) * 1989-05-23 1994-06-28 U.S. Philips Corporation Charge-coupled device, image sensor arrangement and camera provided with such an image sensor arrangement
JPH0327539A (en) * 1989-06-25 1991-02-05 Sony Corp Charge transfer device
NL9000297A (en) * 1990-02-08 1991-09-02 Philips Nv LOAD-COUPLED DEVICE.
DE69329100T2 (en) * 1992-12-09 2001-03-22 Koninkl Philips Electronics Nv Charge coupled arrangement

Also Published As

Publication number Publication date
GB2054961A (en) 1981-02-18

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20000724