ES474153A1 - Mejoras introducidas en un elemento semiconductor amorfo - Google Patents
Mejoras introducidas en un elemento semiconductor amorfoInfo
- Publication number
- ES474153A1 ES474153A1 ES474153A ES474153A ES474153A1 ES 474153 A1 ES474153 A1 ES 474153A1 ES 474153 A ES474153 A ES 474153A ES 474153 A ES474153 A ES 474153A ES 474153 A1 ES474153 A1 ES 474153A1
- Authority
- ES
- Spain
- Prior art keywords
- amorphous
- receiving matrix
- configurations
- amorphous semiconductor
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000011159 matrix material Substances 0.000 abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 230000004913 activation Effects 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000003607 modifier Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/18—Photovoltaic cells having only Schottky potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/166—Amorphous semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Physical Vapour Deposition (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Silicon Compounds (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/841,369 US4177474A (en) | 1977-05-18 | 1977-10-12 | High temperature amorphous semiconductor member and method of making the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES474153A1 true ES474153A1 (es) | 1979-10-16 |
Family
ID=25284694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES474153A Expired ES474153A1 (es) | 1977-10-12 | 1978-10-11 | Mejoras introducidas en un elemento semiconductor amorfo |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5464981A (show.php) |
| AU (1) | AU523107B2 (show.php) |
| CA (1) | CA1123525A (show.php) |
| DE (1) | DE2844070A1 (show.php) |
| ES (1) | ES474153A1 (show.php) |
| FR (1) | FR2454186A1 (show.php) |
| GB (1) | GB2007021B (show.php) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57136377A (en) * | 1981-02-17 | 1982-08-23 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element |
| NL8104140A (nl) * | 1980-09-09 | 1982-04-01 | Energy Conversion Devices Inc | Werkwijze voor het vervaardigen van amorfe halfgeleiderinrichtingen met verbeterde fotogevoelige eigenschappen alsmede als zodanig verkregen inrichtingen. |
| CA1176740A (en) * | 1980-12-03 | 1984-10-23 | Yoshihisa Tawada | High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon |
| IE53485B1 (en) * | 1981-02-12 | 1988-11-23 | Energy Conversion Devices Inc | Improved photoresponsive amorphous alloys |
| JPH03188682A (ja) * | 1981-04-30 | 1991-08-16 | Kanegafuchi Chem Ind Co Ltd | 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合光起電力素子 |
| EP0309000B1 (en) * | 1981-07-17 | 1992-10-14 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Amorphous semiconductor and amorphous silicon photovoltaic device |
| JPS5814583A (ja) * | 1981-07-17 | 1983-01-27 | Kanegafuchi Chem Ind Co Ltd | アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子 |
| EP0072221B1 (en) * | 1981-08-07 | 1987-11-11 | The British Petroleum Company p.l.c. | Non-volatile electrically programmable memory device |
| JPS62162366A (ja) * | 1981-09-17 | 1987-07-18 | Semiconductor Energy Lab Co Ltd | 炭素被膜を有する複合体 |
| JPH07105507B2 (ja) * | 1982-02-25 | 1995-11-13 | プラズマ・フィジクス・コ−ポレ−ション | 光起電力装置 |
| DE3314197A1 (de) * | 1982-04-28 | 1983-11-03 | Energy Conversion Devices, Inc., 48084 Troy, Mich. | P-leitende amorphe siliziumlegierung mit grossem bandabstand und herstellungsverfahren dafuer |
| JPS5957407A (ja) * | 1982-09-27 | 1984-04-03 | Sanyo Electric Co Ltd | 光起電力装置 |
| JPS59108370A (ja) * | 1982-12-14 | 1984-06-22 | Kanegafuchi Chem Ind Co Ltd | 光起電力装置 |
| JPS58180074A (ja) * | 1983-03-28 | 1983-10-21 | Shunpei Yamazaki | 光電変換半導体装置 |
| ES8602301A1 (es) * | 1983-07-18 | 1985-11-01 | Energy Conversion Devices Inc | Una aleacion amorfa mejorada de separacion de bandas estrecha, para aplicaciones fotovoltaicas |
| US4569697A (en) * | 1983-08-26 | 1986-02-11 | Energy Conversion Devices, Inc. | Method of forming photovoltaic quality amorphous alloys by passivating defect states |
| JPS62162367A (ja) * | 1986-11-19 | 1987-07-18 | Semiconductor Energy Lab Co Ltd | 炭素被膜を有する複合体 |
| JPS6316678A (ja) * | 1986-12-26 | 1988-01-23 | Shunpei Yamazaki | 光電変換装置 |
| JP2648733B2 (ja) * | 1993-11-18 | 1997-09-03 | プラズマ・フィジクス・コーポレーション | 半導体装置 |
| JPH077168A (ja) * | 1994-04-15 | 1995-01-10 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
| TWI245288B (en) * | 2003-03-20 | 2005-12-11 | Sony Corp | Semiconductor memory element and semiconductor memory device using the same |
| US20080042119A1 (en) * | 2005-08-09 | 2008-02-21 | Ovonyx, Inc. | Multi-layered chalcogenide and related devices having enhanced operational characteristics |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51128268A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
| CA1078078A (en) * | 1976-03-22 | 1980-05-20 | David E. Carlson | Schottky barrier semiconductor device and method of making same |
-
1978
- 1978-09-20 CA CA311,648A patent/CA1123525A/en not_active Expired
- 1978-09-27 AU AU40237/78A patent/AU523107B2/en not_active Expired
- 1978-10-03 GB GB7839177A patent/GB2007021B/en not_active Expired
- 1978-10-10 FR FR7828855A patent/FR2454186A1/fr active Granted
- 1978-10-10 DE DE19782844070 patent/DE2844070A1/de active Granted
- 1978-10-11 ES ES474153A patent/ES474153A1/es not_active Expired
- 1978-10-12 JP JP12568278A patent/JPS5464981A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2007021B (en) | 1982-05-06 |
| JPS6230512B2 (show.php) | 1987-07-02 |
| AU4023778A (en) | 1980-04-03 |
| AU523107B2 (en) | 1982-07-15 |
| FR2454186B1 (show.php) | 1984-08-24 |
| DE2844070A1 (de) | 1979-04-26 |
| DE2844070C2 (show.php) | 1990-02-01 |
| JPS5464981A (en) | 1979-05-25 |
| FR2454186A1 (fr) | 1980-11-07 |
| GB2007021A (en) | 1979-05-10 |
| CA1123525A (en) | 1982-05-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD1A | Patent lapsed |
Effective date: 20001204 |