ES408908A1 - Un metodo de fabricar un dispositivo semiconductor. - Google Patents

Un metodo de fabricar un dispositivo semiconductor.

Info

Publication number
ES408908A1
ES408908A1 ES408908A ES408908A ES408908A1 ES 408908 A1 ES408908 A1 ES 408908A1 ES 408908 A ES408908 A ES 408908A ES 408908 A ES408908 A ES 408908A ES 408908 A1 ES408908 A1 ES 408908A1
Authority
ES
Spain
Prior art keywords
oxide layer
semiconductor body
areas
semiconductor
sunken
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES408908A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES408908A1 publication Critical patent/ES408908A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current 
    • G05F1/12Regulating voltage or current  wherein the variable actually regulated by the final control device is AC
    • G05F1/24Regulating voltage or current  wherein the variable actually regulated by the final control device is AC using bucking or boosting transformers as final control devices
    • G05F1/247Regulating voltage or current  wherein the variable actually regulated by the final control device is AC using bucking or boosting transformers as final control devices with motor in control circuit
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/021Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • H10W10/13Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/013Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332Making the insulator
    • H10D64/01336Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
ES408908A 1971-11-25 1972-11-23 Un metodo de fabricar un dispositivo semiconductor. Expired ES408908A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7116182A NL7116182A (es) 1971-11-25 1971-11-25

Publications (1)

Publication Number Publication Date
ES408908A1 true ES408908A1 (es) 1975-10-16

Family

ID=19814543

Family Applications (1)

Application Number Title Priority Date Filing Date
ES408908A Expired ES408908A1 (es) 1971-11-25 1972-11-23 Un metodo de fabricar un dispositivo semiconductor.

Country Status (11)

Country Link
JP (1) JPS4861078A (es)
AR (1) AR194520A1 (es)
AT (1) ATA994272A (es)
AU (1) AU469642B2 (es)
CA (1) CA970077A (es)
DE (1) DE2254821A1 (es)
ES (1) ES408908A1 (es)
FR (1) FR2161003B1 (es)
GB (1) GB1409095A (es)
IT (1) IT975824B (es)
NL (1) NL7116182A (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142199A (en) * 1977-06-24 1979-02-27 International Business Machines Corporation Bucket brigade device and process
JPS5534493A (en) * 1978-08-31 1980-03-11 Ibm Bucket brigade cell

Also Published As

Publication number Publication date
FR2161003A1 (es) 1973-07-06
AU469642B2 (en) 1976-02-19
FR2161003B1 (es) 1978-02-03
DE2254821A1 (de) 1973-05-30
JPS4861078A (es) 1973-08-27
AU4908072A (en) 1974-05-23
NL7116182A (es) 1973-05-29
GB1409095A (en) 1975-10-08
ATA994272A (de) 1975-08-15
CA970077A (en) 1975-06-24
AR194520A1 (es) 1973-07-23
IT975824B (it) 1974-08-10

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