ES393737A1 - Dispositivo semiconductor de memoria. - Google Patents
Dispositivo semiconductor de memoria.Info
- Publication number
- ES393737A1 ES393737A1 ES393737A ES393737A ES393737A1 ES 393737 A1 ES393737 A1 ES 393737A1 ES 393737 A ES393737 A ES 393737A ES 393737 A ES393737 A ES 393737A ES 393737 A1 ES393737 A1 ES 393737A1
- Authority
- ES
- Spain
- Prior art keywords
- regions
- control electrode
- insulating layer
- erasing
- writing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/23—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes or William tubes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/005—Arrangements for writing information into, or reading information out from, a digital store with combined beam-and individual cell access
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/44—Charge-storage screens exhibiting internal electric effects caused by particle radiation, e.g. bombardment-induced conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/58—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output
- H01J31/60—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output having means for deflecting, either selectively or sequentially, an electron ray on to separate surface elements of the screen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/22—Subject matter not provided for in other groups of this subclass including field-effect components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6057270A | 1970-08-03 | 1970-08-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES393737A1 true ES393737A1 (es) | 1973-08-16 |
Family
ID=22030356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES393737A Expired ES393737A1 (es) | 1970-08-03 | 1971-07-29 | Dispositivo semiconductor de memoria. |
Country Status (15)
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2168937B1 (US06373033-20020416-M00071.png) * | 1972-01-27 | 1976-07-23 | Bailey Controle Sa | |
| US3975598A (en) * | 1973-05-17 | 1976-08-17 | Westinghouse Electric Corporation | Random-access spoken word electron beam digitally addressable memory |
| US4122530A (en) * | 1976-05-25 | 1978-10-24 | Control Data Corporation | Data management method and system for random access electron beam memory |
| US4190849A (en) * | 1977-09-19 | 1980-02-26 | Motorola, Inc. | Electronic-beam programmable semiconductor device structure |
| DE3032306A1 (de) * | 1980-08-27 | 1982-04-08 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte schaltung mit zu- und/oder abschaltbaren schaltungsteilen |
| DE3032295A1 (de) * | 1980-08-27 | 1982-04-01 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierter festwertspeicher |
| US4450537A (en) * | 1981-08-19 | 1984-05-22 | Siemens Aktiengesellschaft | Monolithically integrated read-only memory |
| JPS58147295U (ja) * | 1982-03-30 | 1983-10-03 | 富士通電装株式会社 | プリント板実装用放熱器 |
| US4491762A (en) * | 1982-06-30 | 1985-01-01 | International Business Machines Corporation | Flat storage CRT and projection display |
| US4764818A (en) * | 1986-02-03 | 1988-08-16 | Electron Beam Memories | Electron beam memory system with improved high rate digital beam pulsing system |
| US5391909A (en) * | 1992-10-13 | 1995-02-21 | Hughes Aircraft Company | Detection of electron-beam scanning of a substrate |
| US10381101B2 (en) * | 2017-12-20 | 2019-08-13 | Micron Technology, Inc. | Non-contact measurement of memory cell threshold voltage |
| CN113129942A (zh) * | 2020-01-14 | 2021-07-16 | 长鑫存储技术有限公司 | 集成电路结构和存储器 |
| FR3119580B1 (fr) | 2021-02-08 | 2022-12-23 | Psa Automobiles Sa | Vehicule electrique equipe d’un boitier electronique |
-
1970
- 1970-08-03 US US00060572A patent/US3721962A/en not_active Expired - Lifetime
-
1971
- 1971-05-19 CA CA113,437A patent/CA950116A/en not_active Expired
- 1971-07-14 GB GB3304571A patent/GB1323631A/en not_active Expired
- 1971-07-19 ZA ZA714756A patent/ZA714756B/xx unknown
- 1971-07-22 AU AU31519/71A patent/AU441498B2/en not_active Expired
- 1971-07-29 ES ES393737A patent/ES393737A1/es not_active Expired
- 1971-08-02 SE SE7109890A patent/SE371319B/xx unknown
- 1971-08-02 BR BR004911/71A patent/BR7104911D0/pt unknown
- 1971-08-02 FR FR7128197A patent/FR2101189B1/fr not_active Expired
- 1971-08-02 AT AT671771A patent/AT316898B/de not_active IP Right Cessation
- 1971-08-02 DK DK377871AA patent/DK136388B/da unknown
- 1971-08-02 BE BE770816A patent/BE770816A/xx unknown
- 1971-08-03 CH CH1143871A patent/CH539914A/de not_active IP Right Cessation
- 1971-08-03 NL NL7110702A patent/NL7110702A/xx not_active Application Discontinuation
- 1971-08-03 JP JP46058598A patent/JPS5131067B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| BR7104911D0 (pt) | 1973-05-10 |
| NL7110702A (US06373033-20020416-M00071.png) | 1972-02-07 |
| FR2101189B1 (US06373033-20020416-M00071.png) | 1976-05-28 |
| JPS5131067B1 (US06373033-20020416-M00071.png) | 1976-09-04 |
| SE371319B (US06373033-20020416-M00071.png) | 1974-11-11 |
| GB1323631A (en) | 1973-07-18 |
| AT316898B (de) | 1974-07-25 |
| AU3151971A (en) | 1973-01-25 |
| AU441498B2 (en) | 1973-11-01 |
| DK136388B (da) | 1977-10-03 |
| CA950116A (en) | 1974-06-25 |
| ZA714756B (en) | 1972-04-26 |
| FR2101189A1 (US06373033-20020416-M00071.png) | 1972-03-31 |
| CH539914A (de) | 1973-07-31 |
| BE770816A (fr) | 1971-12-16 |
| DK136388C (US06373033-20020416-M00071.png) | 1978-03-06 |
| US3721962A (en) | 1973-03-20 |
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