ES388721A1 - Dispositivo semiconductor de almacenamiento de informacion. - Google Patents

Dispositivo semiconductor de almacenamiento de informacion.

Info

Publication number
ES388721A1
ES388721A1 ES388721A ES388721A ES388721A1 ES 388721 A1 ES388721 A1 ES 388721A1 ES 388721 A ES388721 A ES 388721A ES 388721 A ES388721 A ES 388721A ES 388721 A1 ES388721 A1 ES 388721A1
Authority
ES
Spain
Prior art keywords
carriers
storage device
information storage
transition region
moving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES388721A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES388721A1 publication Critical patent/ES388721A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/476—Three-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Facsimile Heads (AREA)
  • Luminescent Compositions (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
ES388721A 1970-02-16 1971-02-15 Dispositivo semiconductor de almacenamiento de informacion. Expired ES388721A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1144670A 1970-02-16 1970-02-16

Publications (1)

Publication Number Publication Date
ES388721A1 true ES388721A1 (es) 1974-05-01

Family

ID=21750410

Family Applications (1)

Application Number Title Priority Date Filing Date
ES388721A Expired ES388721A1 (es) 1970-02-16 1971-02-15 Dispositivo semiconductor de almacenamiento de informacion.

Country Status (9)

Country Link
BE (1) BE762943A (enrdf_load_stackoverflow)
CH (1) CH534941A (enrdf_load_stackoverflow)
DE (1) DE2107110B2 (enrdf_load_stackoverflow)
ES (1) ES388721A1 (enrdf_load_stackoverflow)
FR (1) FR2091962B1 (enrdf_load_stackoverflow)
GB (1) GB1340617A (enrdf_load_stackoverflow)
IE (1) IE34899B1 (enrdf_load_stackoverflow)
NL (1) NL7101991A (enrdf_load_stackoverflow)
SE (1) SE373966B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318155B2 (enrdf_load_stackoverflow) * 1971-12-29 1978-06-13
CA1106477A (en) * 1972-07-10 1981-08-04 Carlo H. Sequin Overflow channel for charge transfer imaging devices
FR2259438B1 (enrdf_load_stackoverflow) * 1974-01-24 1976-10-08 Commissariat Energie Atomique
DE2733707C2 (de) * 1977-07-26 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement, geeignet für optoelektronische Bildaufnahme- und/oder Bildwiedergabegeräte

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424934A (en) * 1966-08-10 1969-01-28 Bell Telephone Labor Inc Electroluminescent cell comprising zinc-doped gallium arsenide on one surface of a silicon nitride layer and spaced chromium-gold electrodes on the other surface
US3473032A (en) * 1968-02-08 1969-10-14 Inventors & Investors Inc Photoelectric surface induced p-n junction device
NL155155B (nl) * 1968-04-23 1977-11-15 Philips Nv Inrichting voor het omzetten van een fysisch patroon in een elektrisch signaal als functie van de tijd, daarmede uitgevoerde televisiecamera, alsmede halfgeleiderinrichting voor toepassing daarin.
US3623026A (en) * 1969-01-21 1971-11-23 Gen Electric Mis device and method for storing information and providing an optical readout

Also Published As

Publication number Publication date
IE34899B1 (en) 1975-09-17
NL7101991A (enrdf_load_stackoverflow) 1971-08-18
DE2107110B2 (de) 1975-02-06
FR2091962B1 (enrdf_load_stackoverflow) 1974-04-26
DE2107110A1 (de) 1971-09-23
FR2091962A1 (enrdf_load_stackoverflow) 1972-01-21
BE762943A (fr) 1971-07-16
GB1340617A (en) 1973-12-12
SE373966B (enrdf_load_stackoverflow) 1975-02-17
CH534941A (de) 1973-03-15
IE34899L (en) 1971-08-16

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