IE34899L - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
IE34899L
IE34899L IE6371A IE6371A IE34899L IE 34899 L IE34899 L IE 34899L IE 6371 A IE6371 A IE 6371A IE 6371 A IE6371 A IE 6371A IE 34899 L IE34899 L IE 34899L
Authority
IE
Ireland
Prior art keywords
carriers
medium
image
electrodes
site
Prior art date
Application number
IE6371A
Other versions
IE34899B1 (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IE34899L publication Critical patent/IE34899L/en
Publication of IE34899B1 publication Critical patent/IE34899B1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866Surface Channel CCD
    • H01L29/76883Three-Phase CCD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Facsimile Heads (AREA)
  • Measurement Of Radiation (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Luminescent Compositions (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

1340617 Electroluminescence WESTERN ELECTRIC CO Inc 19 April 1971 [16 Feb 1970] 21830/71 Heading C4S [Also in Division H1] A semi-conductor device comprises a semiconductive, electroluminescent, charge carrier storage medium, a means for storing the carriers at a first site in the medium, and a means for transferring the carriers to a second site, a radiative output being obtainable on the recombination of the carriers with the bulk carriers of the medium. Electrode and insulator materials and thicknesses are given. The principle of operation is shown in the shift register of Fig. 2 wherein a series of electrodes 22a, 23a &c. overlie the medium 20 on an insulating layer 21. Carriers at the input 25 migrate to the depletion region 27a under electrode 22a, formed by suitable biasing, and is thereafter sequentially transferred to depletion regions sequentially formed under the next electrode by suitably timed voltage pulses on 22<SP>1</SP>, 23<SP>1</SP> and 24<SP>1</SP>. The carriers may alternatively be generated not only at the input, but along the entire device, by light or other ionizing radiation incident upon the medium, movement of the charges towards the output (by means of suitable voltage pulses to the electrodes), resulting in a video signal corresponding to the image on the medium. Alternatively a video signal may produce an image if the video signal is fed into the device, and when all the sites have been charged, or not, by the signal, a bias on the electrodes may cause the carriers to recombine forming an image in the electroluminescent medium. Fig. 10 is such a device, in which in a medium of N type GaAs P type regions 117a, 118a &c. are formed. The electrodes 115a, 116a &c. form the gate electrodes, effectively, of a series of IGFETS, the drain of one FET forming the source of the next. By applying alternating clock pulses to the electrodes, charge carriers can be caused to travel from site to site sequentially, the channels being opened and closed sequentially. When the final site is reached, all the carriers may be forced to recombine simultaneously with the bulk carriers of the medium producing an image in the medium. This image may be applied to a photo-cathode of a CRT to form an image on the screen. Figs. 5A-5C (not shown) illustrate various output devices. Specifications 1,340618 and 1,340,619 are referred to. [GB1340617A]
IE6371A 1970-02-16 1971-01-19 Improvements in or relating to semiconductor devices IE34899B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1144670A 1970-02-16 1970-02-16

Publications (2)

Publication Number Publication Date
IE34899L true IE34899L (en) 1971-08-16
IE34899B1 IE34899B1 (en) 1975-09-17

Family

ID=21750410

Family Applications (1)

Application Number Title Priority Date Filing Date
IE6371A IE34899B1 (en) 1970-02-16 1971-01-19 Improvements in or relating to semiconductor devices

Country Status (9)

Country Link
BE (1) BE762943A (en)
CH (1) CH534941A (en)
DE (1) DE2107110B2 (en)
ES (1) ES388721A1 (en)
FR (1) FR2091962B1 (en)
GB (1) GB1340617A (en)
IE (1) IE34899B1 (en)
NL (1) NL7101991A (en)
SE (1) SE373966B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318155B2 (en) * 1971-12-29 1978-06-13
DE2316612A1 (en) 1972-04-03 1973-10-18 Hitachi Ltd CHARGE TRANSFER SEMICONDUCTOR DEVICES
CA1106477A (en) * 1972-07-10 1981-08-04 Carlo H. Sequin Overflow channel for charge transfer imaging devices
FR2259438B1 (en) * 1974-01-24 1976-10-08 Commissariat Energie Atomique
DE2733707C2 (en) * 1977-07-26 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Semiconductor component, suitable for optoelectronic image recording and / or image reproduction devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424934A (en) * 1966-08-10 1969-01-28 Bell Telephone Labor Inc Electroluminescent cell comprising zinc-doped gallium arsenide on one surface of a silicon nitride layer and spaced chromium-gold electrodes on the other surface
US3473032A (en) * 1968-02-08 1969-10-14 Inventors & Investors Inc Photoelectric surface induced p-n junction device
NL155155B (en) * 1968-04-23 1977-11-15 Philips Nv DEVICE FOR CONVERSION OF A PHYSICAL PATTERN INTO AN ELECTRICAL SIGNAL AS A FUNCTION OF TIME, THE TELEVISION CAMERA CONTAINED, AS WELL AS SEMI-CONDUCTOR DEVICE FOR USE THEREIN.
US3623026A (en) * 1969-01-21 1971-11-23 Gen Electric Mis device and method for storing information and providing an optical readout

Also Published As

Publication number Publication date
IE34899B1 (en) 1975-09-17
FR2091962A1 (en) 1972-01-21
FR2091962B1 (en) 1974-04-26
GB1340617A (en) 1973-12-12
NL7101991A (en) 1971-08-18
ES388721A1 (en) 1974-05-01
SE373966B (en) 1975-02-17
DE2107110B2 (en) 1975-02-06
BE762943A (en) 1971-07-16
CH534941A (en) 1973-03-15
DE2107110A1 (en) 1971-09-23

Similar Documents

Publication Publication Date Title
GB1377128A (en) Charge coupled circuits
ES388720A1 (en) Monolithic semiconductor apparatus adapted for sequential charge transfer
US3983573A (en) Charge-coupled linear image sensing device
US4047051A (en) Method and apparatus for replicating a charge packet
US3935446A (en) Apparatus for sensing radiation and providing electrical readout
IE34899L (en) Semiconductor devices
US3697786A (en) Capacitively driven charge transfer devices
US3996599A (en) Image detector with background suppression
US3896484A (en) Intrinsic semiconductor charge transfer device using alternate transfer of electrons and holes
GB1386098A (en) Method of controllably altering the conductivity of a glassy amorphous material
US3501638A (en) Infrared converter using tunneling effect
EP0377959A3 (en) A method of driving a charge detection circuit
GB1470587A (en) Linear imaging arrays
US3890500A (en) Apparatus for sensing radiation and providing electrical readout
GB1305491A (en)
US3902187A (en) Surface charge storage and transfer devices
US3582658A (en) Light scanning device utilizing piezoelectric semiconductor material
US4013897A (en) Information signal transfer method and a charge transfer
GB2009500A (en) Charge coupled device
GB1467914A (en) Charge-coupled device comprising a substrate constituted by two semiconductors
Buss et al. Infrared monolithic HgCdTe IR CCD focal plane technology
JPS5655081A (en) Charge coupled device
GB1108761A (en) Improvements relating to electrical scanning apparatus
FR2248607A1 (en) Electronic information display and storage device - has an array of microchannels using secondary electron emission
JPS51138348A (en) Semiconductor device