GB1467914A - Charge-coupled device comprising a substrate constituted by two semiconductors - Google Patents

Charge-coupled device comprising a substrate constituted by two semiconductors

Info

Publication number
GB1467914A
GB1467914A GB160175A GB160175A GB1467914A GB 1467914 A GB1467914 A GB 1467914A GB 160175 A GB160175 A GB 160175A GB 160175 A GB160175 A GB 160175A GB 1467914 A GB1467914 A GB 1467914A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
gap
regions
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB160175A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of GB1467914A publication Critical patent/GB1467914A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

1467914 Charge-coupled devices COMMISSIARIAT A L'ENERGIE ATOMIQUE 14 Jan 1975 [24 Jan 1974] 1601/75 Heading H1K Unidirectionality of charge transfer in a charge-coupled device is ensured by providing at the downstream end of each of the potential walls a region of a semi-conductor material having a smaller energy gap than that of the semiconductor material at the upstream end of the wall. In Fig. 3 small energy-gap regions 20 are provided at the downstream end of the potential wells beneath commonly connected electrodes 14 and similar regions 22 provide unidirectionality in the inter-electrode spaces. In a modification further electrodes provided beneath the electrodes 14 are connected to a fixed voltage source intermediate between the values V 1 and V 2 between which the electrodes 14 are cycled. A 2-phase construction is also described, with small energy-gap semi-conductor regions at the downstream ends of potential wells beneath each electrode, alternate ones of which are supplied by respective control lines. Semi-conductor combinations disclosed are Si with any one of Ga, GaAs, GaP, GaSb, InAs, InP, InSb, CdSe, CdTe, ZnSe or ZnTe. The regions 20, 22 may comprise separate crystals juxtaposed with one or more crystals of the main semi-conductor, but preferably they are formed by diffusing or ion-implanting atoms of a second semi-conductor material into a body of the first semiconductor. If the second semi-conductor is a compound its two components are successively implanted into the host material.
GB160175A 1974-01-24 1975-01-14 Charge-coupled device comprising a substrate constituted by two semiconductors Expired GB1467914A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7402410A FR2259438B1 (en) 1974-01-24 1974-01-24

Publications (1)

Publication Number Publication Date
GB1467914A true GB1467914A (en) 1977-03-23

Family

ID=9133939

Family Applications (1)

Application Number Title Priority Date Filing Date
GB160175A Expired GB1467914A (en) 1974-01-24 1975-01-14 Charge-coupled device comprising a substrate constituted by two semiconductors

Country Status (4)

Country Link
JP (1) JPS5921183B2 (en)
DE (1) DE2502481A1 (en)
FR (1) FR2259438B1 (en)
GB (1) GB1467914A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6138821U (en) * 1984-08-10 1986-03-11 住友電装株式会社 clamp
JPH0512129Y2 (en) * 1986-05-09 1993-03-26
JPH0625967U (en) * 1993-07-06 1994-04-08 オムロン株式会社 Coin slot structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE34899B1 (en) * 1970-02-16 1975-09-17 Western Electric Co Improvements in or relating to semiconductor devices
SE387186B (en) * 1971-06-28 1976-08-30 Western Electric Co CHARGING COUPLED SEMICONDUCTOR DEVICE WITH DIFFERENT CHARGING CONCENTRATION ALONG THE INFORMATION CHANNEL
BE793094A (en) * 1971-12-23 1973-04-16 Western Electric Co CHARGE TRANSFER IMAGE TRAINING DEVICE

Also Published As

Publication number Publication date
JPS5921183B2 (en) 1984-05-18
FR2259438B1 (en) 1976-10-08
DE2502481A1 (en) 1975-07-31
JPS5129844A (en) 1976-03-13
FR2259438A1 (en) 1975-08-22
DE2502481C2 (en) 1989-04-20

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee
728C Application made for restoration (sect. 28/1977)
728U Case decided by the comptroller (sect. 28/1977)
728B Application made to the patents court (sect. 28/1977)
728I Application to the court of appeal (sect. 28/1977)