JPS5129844A - DENKAKETSU GOSOCHI - Google Patents

DENKAKETSU GOSOCHI

Info

Publication number
JPS5129844A
JPS5129844A JP1038375A JP1038375A JPS5129844A JP S5129844 A JPS5129844 A JP S5129844A JP 1038375 A JP1038375 A JP 1038375A JP 1038375 A JP1038375 A JP 1038375A JP S5129844 A JPS5129844 A JP S5129844A
Authority
JP
Japan
Prior art keywords
gosochi
denkaketsu
denkaketsu gosochi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1038375A
Other languages
Japanese (ja)
Other versions
JPS5921183B2 (en
Inventor
Roboreru Josefu
Rakuuru Jatsuku
Merukeru Jeraaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of JPS5129844A publication Critical patent/JPS5129844A/en
Publication of JPS5921183B2 publication Critical patent/JPS5921183B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD
JP50010383A 1974-01-24 1975-01-24 charge coupled device Expired JPS5921183B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7402410A FR2259438B1 (en) 1974-01-24 1974-01-24
FR7402410 1974-01-24

Publications (2)

Publication Number Publication Date
JPS5129844A true JPS5129844A (en) 1976-03-13
JPS5921183B2 JPS5921183B2 (en) 1984-05-18

Family

ID=9133939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50010383A Expired JPS5921183B2 (en) 1974-01-24 1975-01-24 charge coupled device

Country Status (4)

Country Link
JP (1) JPS5921183B2 (en)
DE (1) DE2502481A1 (en)
FR (1) FR2259438B1 (en)
GB (1) GB1467914A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0625967U (en) * 1993-07-06 1994-04-08 オムロン株式会社 Coin slot structure

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6138821U (en) * 1984-08-10 1986-03-11 住友電装株式会社 clamp
JPH0512129Y2 (en) * 1986-05-09 1993-03-26

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874190A (en) * 1971-12-23 1973-10-05

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE34899B1 (en) * 1970-02-16 1975-09-17 Western Electric Co Improvements in or relating to semiconductor devices
SE387186B (en) * 1971-06-28 1976-08-30 Western Electric Co CHARGING COUPLED SEMICONDUCTOR DEVICE WITH DIFFERENT CHARGING CONCENTRATION ALONG THE INFORMATION CHANNEL

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874190A (en) * 1971-12-23 1973-10-05

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0625967U (en) * 1993-07-06 1994-04-08 オムロン株式会社 Coin slot structure

Also Published As

Publication number Publication date
DE2502481C2 (en) 1989-04-20
JPS5921183B2 (en) 1984-05-18
FR2259438A1 (en) 1975-08-22
GB1467914A (en) 1977-03-23
FR2259438B1 (en) 1976-10-08
DE2502481A1 (en) 1975-07-31

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JPS5129844A (en) DENKAKETSU GOSOCHI