FR2259438A1 - - Google Patents

Info

Publication number
FR2259438A1
FR2259438A1 FR7402410A FR7402410A FR2259438A1 FR 2259438 A1 FR2259438 A1 FR 2259438A1 FR 7402410 A FR7402410 A FR 7402410A FR 7402410 A FR7402410 A FR 7402410A FR 2259438 A1 FR2259438 A1 FR 2259438A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7402410A
Other languages
French (fr)
Other versions
FR2259438B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7402410A priority Critical patent/FR2259438B1/fr
Priority to GB160175A priority patent/GB1467914A/en
Priority to DE19752502481 priority patent/DE2502481A1/en
Priority to JP50010383A priority patent/JPS5921183B2/en
Publication of FR2259438A1 publication Critical patent/FR2259438A1/fr
Priority to US05/703,545 priority patent/US4035665A/en
Application granted granted Critical
Publication of FR2259438B1 publication Critical patent/FR2259438B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7402410A 1974-01-24 1974-01-24 Expired FR2259438B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7402410A FR2259438B1 (en) 1974-01-24 1974-01-24
GB160175A GB1467914A (en) 1974-01-24 1975-01-14 Charge-coupled device comprising a substrate constituted by two semiconductors
DE19752502481 DE2502481A1 (en) 1974-01-24 1975-01-22 CHARGE TRANSFER DEVICE WITH SEMI-CONDUCERS WITH DIFFERENT WIDTH FORBIDDEN BANDS
JP50010383A JPS5921183B2 (en) 1974-01-24 1975-01-24 charge coupled device
US05/703,545 US4035665A (en) 1974-01-24 1976-07-08 Charge-coupled device comprising semiconductors having different forbidden band widths

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7402410A FR2259438B1 (en) 1974-01-24 1974-01-24

Publications (2)

Publication Number Publication Date
FR2259438A1 true FR2259438A1 (en) 1975-08-22
FR2259438B1 FR2259438B1 (en) 1976-10-08

Family

ID=9133939

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7402410A Expired FR2259438B1 (en) 1974-01-24 1974-01-24

Country Status (4)

Country Link
JP (1) JPS5921183B2 (en)
DE (1) DE2502481A1 (en)
FR (1) FR2259438B1 (en)
GB (1) GB1467914A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6138821U (en) * 1984-08-10 1986-03-11 住友電装株式会社 clamp
JPH0512129Y2 (en) * 1986-05-09 1993-03-26
JPH0625967U (en) * 1993-07-06 1994-04-08 オムロン株式会社 Coin slot structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE34899B1 (en) * 1970-02-16 1975-09-17 Western Electric Co Improvements in or relating to semiconductor devices
SE387186B (en) * 1971-06-28 1976-08-30 Western Electric Co CHARGING COUPLED SEMICONDUCTOR DEVICE WITH DIFFERENT CHARGING CONCENTRATION ALONG THE INFORMATION CHANNEL
BE793094A (en) * 1971-12-23 1973-04-16 Western Electric Co CHARGE TRANSFER IMAGE TRAINING DEVICE

Also Published As

Publication number Publication date
JPS5921183B2 (en) 1984-05-18
DE2502481C2 (en) 1989-04-20
JPS5129844A (en) 1976-03-13
FR2259438B1 (en) 1976-10-08
DE2502481A1 (en) 1975-07-31
GB1467914A (en) 1977-03-23

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Legal Events

Date Code Title Description
ST Notification of lapse