NL7101991A - - Google Patents

Info

Publication number
NL7101991A
NL7101991A NL7101991A NL7101991A NL7101991A NL 7101991 A NL7101991 A NL 7101991A NL 7101991 A NL7101991 A NL 7101991A NL 7101991 A NL7101991 A NL 7101991A NL 7101991 A NL7101991 A NL 7101991A
Authority
NL
Netherlands
Application number
NL7101991A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7101991A publication Critical patent/NL7101991A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866Surface Channel CCD
    • H01L29/76883Three-Phase CCD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Facsimile Heads (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
  • Measurement Of Radiation (AREA)
  • Luminescent Compositions (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
NL7101991A 1970-02-16 1971-02-15 NL7101991A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1144670A 1970-02-16 1970-02-16

Publications (1)

Publication Number Publication Date
NL7101991A true NL7101991A (xx) 1971-08-18

Family

ID=21750410

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7101991A NL7101991A (xx) 1970-02-16 1971-02-15

Country Status (9)

Country Link
BE (1) BE762943A (xx)
CH (1) CH534941A (xx)
DE (1) DE2107110B2 (xx)
ES (1) ES388721A1 (xx)
FR (1) FR2091962B1 (xx)
GB (1) GB1340617A (xx)
IE (1) IE34899B1 (xx)
NL (1) NL7101991A (xx)
SE (1) SE373966B (xx)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318155B2 (xx) * 1971-12-29 1978-06-13
DE2316612A1 (de) 1972-04-03 1973-10-18 Hitachi Ltd Ladungsuebertragungs-halbleitervorrichtungen
CA1106477A (en) * 1972-07-10 1981-08-04 Carlo H. Sequin Overflow channel for charge transfer imaging devices
FR2259438B1 (xx) * 1974-01-24 1976-10-08 Commissariat Energie Atomique
DE2733707C2 (de) * 1977-07-26 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement, geeignet für optoelektronische Bildaufnahme- und/oder Bildwiedergabegeräte

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424934A (en) * 1966-08-10 1969-01-28 Bell Telephone Labor Inc Electroluminescent cell comprising zinc-doped gallium arsenide on one surface of a silicon nitride layer and spaced chromium-gold electrodes on the other surface
US3473032A (en) * 1968-02-08 1969-10-14 Inventors & Investors Inc Photoelectric surface induced p-n junction device
NL155155B (nl) * 1968-04-23 1977-11-15 Philips Nv Inrichting voor het omzetten van een fysisch patroon in een elektrisch signaal als functie van de tijd, daarmede uitgevoerde televisiecamera, alsmede halfgeleiderinrichting voor toepassing daarin.
US3623026A (en) * 1969-01-21 1971-11-23 Gen Electric Mis device and method for storing information and providing an optical readout

Also Published As

Publication number Publication date
IE34899B1 (en) 1975-09-17
BE762943A (fr) 1971-07-16
DE2107110A1 (de) 1971-09-23
FR2091962A1 (xx) 1972-01-21
DE2107110B2 (de) 1975-02-06
SE373966B (xx) 1975-02-17
ES388721A1 (es) 1974-05-01
FR2091962B1 (xx) 1974-04-26
CH534941A (de) 1973-03-15
IE34899L (en) 1971-08-16
GB1340617A (en) 1973-12-12

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