ES388721A1 - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
ES388721A1
ES388721A1 ES388721A ES388721A ES388721A1 ES 388721 A1 ES388721 A1 ES 388721A1 ES 388721 A ES388721 A ES 388721A ES 388721 A ES388721 A ES 388721A ES 388721 A1 ES388721 A1 ES 388721A1
Authority
ES
Spain
Prior art keywords
carriers
transition region
moving
transition
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES388721A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES388721A1 publication Critical patent/ES388721A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76883—Three-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Facsimile Heads (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Luminescent Compositions (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

Semiconductor information storage device comprising a body of electroluminescent semiconductor material, means associated with a surface of said body to form a transition region located in a first position in said body, input means to create minority charge carriers in the region of transition said carriers represent the input of information, means for moving said carriers through said body in a direction essentially parallel to said surface comprising means for moving said transition region from said first position to said second position, and means acting on the load carriers in the second position to weaken said transition region and thus generate a light output in said second position. (Machine-translation by Google Translate, not legally binding)
ES388721A 1970-02-16 1971-02-15 Semiconductor devices Expired ES388721A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1144670A 1970-02-16 1970-02-16

Publications (1)

Publication Number Publication Date
ES388721A1 true ES388721A1 (en) 1974-05-01

Family

ID=21750410

Family Applications (1)

Application Number Title Priority Date Filing Date
ES388721A Expired ES388721A1 (en) 1970-02-16 1971-02-15 Semiconductor devices

Country Status (9)

Country Link
BE (1) BE762943A (en)
CH (1) CH534941A (en)
DE (1) DE2107110B2 (en)
ES (1) ES388721A1 (en)
FR (1) FR2091962B1 (en)
GB (1) GB1340617A (en)
IE (1) IE34899B1 (en)
NL (1) NL7101991A (en)
SE (1) SE373966B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318155B2 (en) * 1971-12-29 1978-06-13
NL165886C (en) 1972-04-03 1981-05-15 Hitachi Ltd SEMICONDUCTOR DEVICE OF THE LOAD-CONNECTED TYPE FOR STORING AND IN COMPLIANT TRANSFER OF PACKAGES OF MAJORITY CARRIERS.
CA1106477A (en) * 1972-07-10 1981-08-04 Carlo H. Sequin Overflow channel for charge transfer imaging devices
FR2259438B1 (en) * 1974-01-24 1976-10-08 Commissariat Energie Atomique
DE2733707C2 (en) * 1977-07-26 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Semiconductor component, suitable for optoelectronic image recording and / or image reproduction devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424934A (en) * 1966-08-10 1969-01-28 Bell Telephone Labor Inc Electroluminescent cell comprising zinc-doped gallium arsenide on one surface of a silicon nitride layer and spaced chromium-gold electrodes on the other surface
US3473032A (en) * 1968-02-08 1969-10-14 Inventors & Investors Inc Photoelectric surface induced p-n junction device
NL155155B (en) * 1968-04-23 1977-11-15 Philips Nv DEVICE FOR CONVERSION OF A PHYSICAL PATTERN INTO AN ELECTRICAL SIGNAL AS A FUNCTION OF TIME, THE TELEVISION CAMERA CONTAINED, AS WELL AS SEMI-CONDUCTOR DEVICE FOR USE THEREIN.
US3623026A (en) * 1969-01-21 1971-11-23 Gen Electric Mis device and method for storing information and providing an optical readout

Also Published As

Publication number Publication date
IE34899L (en) 1971-08-16
GB1340617A (en) 1973-12-12
FR2091962A1 (en) 1972-01-21
SE373966B (en) 1975-02-17
NL7101991A (en) 1971-08-18
BE762943A (en) 1971-07-16
FR2091962B1 (en) 1974-04-26
DE2107110B2 (en) 1975-02-06
DE2107110A1 (en) 1971-09-23
IE34899B1 (en) 1975-09-17
CH534941A (en) 1973-03-15

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