NL159828B - Halfgeleider-injectielaser met heterostructuur. - Google Patents
Halfgeleider-injectielaser met heterostructuur.Info
- Publication number
- NL159828B NL159828B NL6915370A NL6915370A NL159828B NL 159828 B NL159828 B NL 159828B NL 6915370 A NL6915370 A NL 6915370A NL 6915370 A NL6915370 A NL 6915370A NL 159828 B NL159828 B NL 159828B
- Authority
- NL
- Netherlands
- Prior art keywords
- heterostructure
- injection laser
- semiconductor injection
- semiconductor
- laser
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76690268A | 1968-10-11 | 1968-10-11 | |
US78745968A | 1968-12-27 | 1968-12-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6915370A NL6915370A (nl) | 1970-04-14 |
NL159828B true NL159828B (nl) | 1979-03-15 |
Family
ID=27117815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6915370A NL159828B (nl) | 1968-10-11 | 1969-10-10 | Halfgeleider-injectielaser met heterostructuur. |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS4947316B1 (nl) |
BE (1) | BE739896A (nl) |
CH (1) | CH502702A (nl) |
DE (1) | DE1949575B2 (nl) |
FR (1) | FR2020380A1 (nl) |
GB (1) | GB1288082A (nl) |
NL (1) | NL159828B (nl) |
SE (1) | SE374850B (nl) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3758875A (en) * | 1970-05-01 | 1973-09-11 | Bell Telephone Labor Inc | Double heterostructure junction lasers |
DE2042517A1 (de) * | 1970-08-27 | 1972-03-02 | Pilkuhn M | Halbleiterlaser |
DE3043581A1 (de) * | 1980-11-19 | 1982-06-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiteranordnung |
-
1969
- 1969-10-01 SE SE1350769D patent/SE374850B/xx unknown
- 1969-10-01 DE DE19691949575 patent/DE1949575B2/de not_active Ceased
- 1969-10-06 BE BE739896D patent/BE739896A/xx not_active IP Right Cessation
- 1969-10-07 FR FR6934184A patent/FR2020380A1/fr active Pending
- 1969-10-10 CH CH1526869A patent/CH502702A/de not_active IP Right Cessation
- 1969-10-10 NL NL6915370A patent/NL159828B/nl not_active IP Right Cessation
- 1969-10-10 GB GB1288082D patent/GB1288082A/en not_active Expired
- 1969-10-11 JP JP8074669A patent/JPS4947316B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
GB1288082A (nl) | 1972-09-06 |
BE739896A (nl) | 1970-03-16 |
DE1949575B2 (de) | 1980-03-27 |
NL6915370A (nl) | 1970-04-14 |
JPS4947316B1 (nl) | 1974-12-14 |
CH502702A (de) | 1971-01-31 |
FR2020380A1 (nl) | 1970-07-10 |
SE374850B (nl) | 1975-03-17 |
DE1949575A1 (de) | 1970-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NL80 | Abbreviated name of patent owner mentioned of already nullified patent |
Owner name: WESTERN |
|
V4 | Lapsed because of reaching the maxim lifetime of a patent |