CH427069A - Halbleiter-Injektionslaser - Google Patents

Halbleiter-Injektionslaser

Info

Publication number
CH427069A
CH427069A CH179065A CH179065A CH427069A CH 427069 A CH427069 A CH 427069A CH 179065 A CH179065 A CH 179065A CH 179065 A CH179065 A CH 179065A CH 427069 A CH427069 A CH 427069A
Authority
CH
Switzerland
Prior art keywords
injection laser
semiconductor injection
semiconductor
laser
injection
Prior art date
Application number
CH179065A
Other languages
English (en)
Inventor
Bicksler Fowler Alan
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH427069A publication Critical patent/CH427069A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
CH179065A 1964-02-10 1965-02-10 Halbleiter-Injektionslaser CH427069A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US343588A US3303431A (en) 1964-02-10 1964-02-10 Coupled semiconductor injection laser devices

Publications (1)

Publication Number Publication Date
CH427069A true CH427069A (de) 1966-12-31

Family

ID=23346715

Family Applications (1)

Application Number Title Priority Date Filing Date
CH179065A CH427069A (de) 1964-02-10 1965-02-10 Halbleiter-Injektionslaser

Country Status (6)

Country Link
US (1) US3303431A (de)
CH (1) CH427069A (de)
DE (1) DE1282210B (de)
FR (1) FR1423482A (de)
GB (1) GB1079813A (de)
SE (1) SE323154B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3427563A (en) * 1964-05-13 1969-02-11 Ibm Multistable device operating on the principle of stimulated emission of radiation
US3768037A (en) * 1965-11-26 1973-10-23 Hitachi Ltd Semiconductor diode laser device
US4038610A (en) * 1966-11-21 1977-07-26 Semiconductor Research Foundation Luminosity control system employing semiconductor lasers
US3479614A (en) * 1967-03-23 1969-11-18 Bell Telephone Labor Inc Tunable semiconductor optical masers
US3525024A (en) * 1967-05-23 1970-08-18 Akira Kawaji Injection laser adder element
US3701044A (en) * 1970-06-29 1972-10-24 Bell Telephone Labor Inc Optical coupling of adjacent stripe contact geometry semiconductor lasers
JPS5242358B2 (de) * 1971-12-20 1977-10-24
JPS5029282A (de) * 1973-07-20 1975-03-25
DE2537569C2 (de) * 1973-12-28 1982-11-04 Nippon Electric Co., Ltd., Tokyo Betriebsverfahren für einen modulierbaren Halbleiterlaser und Anordnung zur Durchführung des Verfahrens
GB1543405A (en) * 1975-03-29 1979-04-04 Licentia Gmbh Method of and arrangement for producing coherent mode radiation
US4316156A (en) * 1979-07-12 1982-02-16 Xerox Corporation Optical repeater integrated lasers
US4284963A (en) * 1979-08-24 1981-08-18 Mcdonnell Douglas Corporation Etalon laser diode
DE3009192C2 (de) * 1980-03-11 1984-05-10 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Überlastschutzanordnung
US4468772A (en) * 1982-04-15 1984-08-28 Oudar Jean Louis Bistable optical device
US4734380A (en) * 1983-04-08 1988-03-29 American Telephone And Telegraph Company, At&T Bell Laboratories Multicavity optical device held together by metallic film
US4785454A (en) * 1983-05-13 1988-11-15 American Telephone And Telegraph Company, At&T Bell Laboratories Stabilized cleaved-coupled cavity laser
US4528670A (en) * 1983-02-25 1985-07-09 At&T Bell Laboratories Short coupled cavity laser
US4622671A (en) * 1983-02-25 1986-11-11 At&T Bell Laboratories Multicavity optical device
EP0117734B1 (de) * 1983-02-25 1989-04-26 AT&T Corp. Optische Einrichtung mit Vielfachresonator und Anwendungen dafür
FR2668670B1 (fr) * 1990-10-31 1992-12-31 France Etat Procede de transmission optique par decalage en longueur d'onde et systeme correspondant.

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
US2846592A (en) * 1955-05-20 1958-08-05 Ibm Temperature compensated semiconductor devices
BE556305A (de) * 1956-04-18
US2967952A (en) * 1956-04-25 1961-01-10 Shockley William Semiconductor shift register
US3051840A (en) * 1959-12-18 1962-08-28 Ibm Photosensitive field effect unit
USRE25632E (en) * 1960-01-11 1964-08-18 Optical maser
US3200259A (en) * 1961-08-01 1965-08-10 Rca Corp Solid state electrical devices utilizing phonon propagation

Also Published As

Publication number Publication date
FR1423482A (fr) 1966-01-03
DE1282210B (de) 1968-11-07
SE323154B (de) 1970-04-27
GB1079813A (en) 1967-08-16
US3303431A (en) 1967-02-07

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