AT254265B - Injektionslaser - Google Patents

Injektionslaser

Info

Publication number
AT254265B
AT254265B AT1097364A AT1097364A AT254265B AT 254265 B AT254265 B AT 254265B AT 1097364 A AT1097364 A AT 1097364A AT 1097364 A AT1097364 A AT 1097364A AT 254265 B AT254265 B AT 254265B
Authority
AT
Austria
Prior art keywords
injection laser
laser
injection
Prior art date
Application number
AT1097364A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of AT254265B publication Critical patent/AT254265B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/052—Light-emitting semiconductor devices having Schottky type light-emitting regions; Light emitting semiconductor devices having Metal-Insulator-Semiconductor type light-emitting regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Luminescent Compositions (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
AT1097364A 1963-12-31 1964-12-28 Injektionslaser AT254265B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US334722A US3281714A (en) 1963-12-31 1963-12-31 Injection laser using minority carrier injection by tunneling

Publications (1)

Publication Number Publication Date
AT254265B true AT254265B (de) 1967-05-10

Family

ID=23308525

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1097364A AT254265B (de) 1963-12-31 1964-12-28 Injektionslaser

Country Status (7)

Country Link
US (1) US3281714A (de)
AT (1) AT254265B (de)
CH (1) CH419372A (de)
DE (1) DE1220950B (de)
GB (1) GB1022808A (de)
NL (1) NL6415140A (de)
SE (1) SE322300B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440499A (en) * 1966-03-21 1969-04-22 Germano Fasano Thin-film rectifying device comprising a layer of cef3 between a metal and cds layer
US3493767A (en) * 1967-06-01 1970-02-03 Gen Telephone & Elect Tunnel emission photodetector having a thin insulation layer and a p-type semiconductor layer
US3541375A (en) * 1967-06-07 1970-11-17 Gen Electric Barrier layer electroluminescent devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1052563B (de) 1957-03-05 1959-03-12 Albrecht Fischer Dipl Phys Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen
USRE25632E (en) * 1960-01-11 1964-08-18 Optical maser
US3056073A (en) * 1960-02-15 1962-09-25 California Inst Res Found Solid-state electron devices
US3204159A (en) * 1960-09-14 1965-08-31 Bramley Jenny Rectifying majority carrier device

Also Published As

Publication number Publication date
SE322300B (de) 1970-04-06
DE1220950B (de) 1966-07-14
CH419372A (de) 1966-08-31
GB1022808A (en) 1966-03-16
NL6415140A (de) 1965-07-02
US3281714A (en) 1966-10-25

Similar Documents

Publication Publication Date Title
CH427069A (de) Halbleiter-Injektionslaser
CH423023A (de) Injektionslaser
AT254655B (de) Bohrwerkzueg
CH419371A (de) Laser
NL150279B (nl) Laser.
AT252857B (de) Rollkarde
CH420245A (fr) Wagon-lit
CH397177A (de) Cintre
AT254265B (de) Injektionslaser
AT265913B (de) Spritzgußform
CH399683A (it) Wäschegestell
BR6463117D0 (pt) 7-16-dialquil-pregnanos
FR1373486A (fr) Servo-mécanisme
FR1420374A (fr) Laser
FR1388343A (fr) Maser à injection
ES101651Y (es) Caja-envase simplificada
FR1417783A (fr) Laser à semi-conducteur à injection
FI36246A (fi) Tätning i rörkoppling
ES102324Y (es) Vela inyectada
FR1382783A (fr) Structure de laser à injection planaire
ES98227Y (es) Plegador
ES102651Y (es) Plegador
FR1383029A (fr) Miroir
AT242561B (de) Spritzform
FR1428522A (fr) Laser annulaire