ES387300A1 - Manufacture of selenium rectifier plates - Google Patents

Manufacture of selenium rectifier plates

Info

Publication number
ES387300A1
ES387300A1 ES387300A ES387300A ES387300A1 ES 387300 A1 ES387300 A1 ES 387300A1 ES 387300 A ES387300 A ES 387300A ES 387300 A ES387300 A ES 387300A ES 387300 A1 ES387300 A1 ES 387300A1
Authority
ES
Spain
Prior art keywords
selenium
indium
halogen
manufacture
partial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES387300A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of ES387300A1 publication Critical patent/ES387300A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Physical Vapour Deposition (AREA)
  • Hybrid Cells (AREA)

Abstract

Procedure for the manufacture of selenium grinding plates, of the type that comprises a metal support plate, a selenium layer arranged on the plate and formed by three different partial layers, and a cap terminal electrode, in which a selenium is added halogen in the ratio of the number of halogen atoms to the number of selenium atoms from 1.5 to 3.10-4, the central partial layer being formed by selenium with halogen content and an additive metal, characterized in that indium is used as Additive metal, because to produce the central partial layer of selenium containing indium and halogen, indium is added to selenium in a proportion of 65 to 350 mg per 100 grams of selenium, and therefore both the selenium-containing partial layer contains of indium, in predetermined thickness, as well as the other selenium partial layers are applied under vacuum in a substantially amorphous state, and are subjected in a following step of process to a heat treatment to obtain a crystalline structure. (Machine-translation by Google Translate, not legally binding)
ES387300A 1969-12-19 1970-12-17 Manufacture of selenium rectifier plates Expired ES387300A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691963738 DE1963738A1 (en) 1969-12-19 1969-12-19 Method of manufacturing selenium rectifier plates

Publications (1)

Publication Number Publication Date
ES387300A1 true ES387300A1 (en) 1973-11-16

Family

ID=5754393

Family Applications (2)

Application Number Title Priority Date Filing Date
ES387300A Expired ES387300A1 (en) 1969-12-19 1970-12-17 Manufacture of selenium rectifier plates
ES1973191965U Expired ES191965Y (en) 1969-12-19 1973-05-29 SELENIUM RECTIFIER PLATE.

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES1973191965U Expired ES191965Y (en) 1969-12-19 1973-05-29 SELENIUM RECTIFIER PLATE.

Country Status (5)

Country Link
DE (1) DE1963738A1 (en)
ES (2) ES387300A1 (en)
FR (1) FR2073483B1 (en)
GB (1) GB1331074A (en)
SE (1) SE356166B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1430961A (en) * 1972-01-22 1976-04-07 Yamanouchi Pharma Co Ltd 1-substituted-1,4-dihyddrypyridine derivatives
DE3942884A1 (en) * 1989-12-23 1991-06-27 Sitec Gmbh Sicherheitseinricht Drum closure for transfer of valuables - has stationary trough in horizontal, rotary drum ending at edge of removal aperture

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1060053B (en) * 1953-02-10 1959-06-25 Siemens Ag Process for the production of selenium rectifiers with a multilayer semiconductor with different halogen contents and electropositive additives in the individual layers
NL221258A (en) * 1954-11-29

Also Published As

Publication number Publication date
FR2073483A1 (en) 1971-10-01
ES191965U (en) 1974-09-01
ES191965Y (en) 1975-01-01
GB1331074A (en) 1973-09-19
FR2073483B1 (en) 1976-05-28
DE1963738A1 (en) 1971-06-24
SE356166B (en) 1973-05-14

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