ES356784A1 - Metodo para la fabricacion de dispositivos semiconductores provistos de contactos y dispositivo semiconductor resultan-te. - Google Patents

Metodo para la fabricacion de dispositivos semiconductores provistos de contactos y dispositivo semiconductor resultan-te.

Info

Publication number
ES356784A1
ES356784A1 ES356784A ES356784A ES356784A1 ES 356784 A1 ES356784 A1 ES 356784A1 ES 356784 A ES356784 A ES 356784A ES 356784 A ES356784 A ES 356784A ES 356784 A1 ES356784 A1 ES 356784A1
Authority
ES
Spain
Prior art keywords
titanium
platinum
photo
oxide
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES356784A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES356784A1 publication Critical patent/ES356784A1/es
Expired legal-status Critical Current

Links

Classifications

    • H10W74/43—
    • H10P95/00—
    • H10W20/40—
    • H10W72/012—
    • H10W72/251—
    • H10W72/923—
    • H10W72/952—

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
ES356784A 1967-08-04 1968-07-17 Metodo para la fabricacion de dispositivos semiconductores provistos de contactos y dispositivo semiconductor resultan-te. Expired ES356784A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65837767A 1967-08-04 1967-08-04

Publications (1)

Publication Number Publication Date
ES356784A1 true ES356784A1 (es) 1970-02-01

Family

ID=24641005

Family Applications (1)

Application Number Title Priority Date Filing Date
ES356784A Expired ES356784A1 (es) 1967-08-04 1968-07-17 Metodo para la fabricacion de dispositivos semiconductores provistos de contactos y dispositivo semiconductor resultan-te.

Country Status (9)

Country Link
US (1) US3507756A (cg-RX-API-DMAC10.html)
AT (1) AT278906B (cg-RX-API-DMAC10.html)
BE (1) BE718867A (cg-RX-API-DMAC10.html)
CH (1) CH482306A (cg-RX-API-DMAC10.html)
ES (1) ES356784A1 (cg-RX-API-DMAC10.html)
FR (1) FR1578320A (cg-RX-API-DMAC10.html)
GB (1) GB1226814A (cg-RX-API-DMAC10.html)
IL (1) IL30464A (cg-RX-API-DMAC10.html)
NL (1) NL6811007A (cg-RX-API-DMAC10.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3658489A (en) * 1968-08-09 1972-04-25 Nippon Electric Co Laminated electrode for a semiconductor device
US3953266A (en) * 1968-11-28 1976-04-27 Toshio Takai Process for fabricating a semiconductor device
US3620932A (en) * 1969-05-05 1971-11-16 Trw Semiconductors Inc Beam leads and method of fabrication
DE1954499A1 (de) * 1969-10-29 1971-05-06 Siemens Ag Verfahren zur Herstellung von Halbleiterschaltkreisen mit Leitbahnen
US3634202A (en) * 1970-05-19 1972-01-11 Lignes Telegraph Telephon Process for the production of thick film conductors and circuits incorporating such conductors
US3668484A (en) * 1970-10-28 1972-06-06 Rca Corp Semiconductor device with multi-level metalization and method of making the same
JPS5515874B1 (cg-RX-API-DMAC10.html) * 1971-06-08 1980-04-26
FR2209216B1 (cg-RX-API-DMAC10.html) * 1972-11-30 1977-09-30 Ibm
US4988412A (en) * 1988-12-27 1991-01-29 General Electric Company Selective electrolytic desposition on conductive and non-conductive substrates
JP3166221B2 (ja) * 1991-07-23 2001-05-14 日本電気株式会社 半導体装置及びその製造方法
JP2861629B2 (ja) * 1992-05-27 1999-02-24 日本電気株式会社 半導体装置
US5783483A (en) * 1993-02-24 1998-07-21 Intel Corporation Method of fabricating a barrier against metal diffusion
EP0877417A1 (en) * 1997-05-09 1998-11-11 Lucent Technologies Inc. Method for fabrication of electrodes and other electrically-conductive structures
US6922294B2 (en) * 2003-05-02 2005-07-26 International Business Machines Corporation Optical communication assembly
US6836015B2 (en) * 2003-05-02 2004-12-28 International Business Machines Corporation Optical assemblies for transmitting and manipulating optical beams

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3287612A (en) * 1963-12-17 1966-11-22 Bell Telephone Labor Inc Semiconductor contacts and protective coatings for planar devices
US3386894A (en) * 1964-09-28 1968-06-04 Northern Electric Co Formation of metallic contacts
US3388048A (en) * 1965-12-07 1968-06-11 Bell Telephone Labor Inc Fabrication of beam lead semiconductor devices

Also Published As

Publication number Publication date
CH482306A (de) 1969-11-30
BE718867A (cg-RX-API-DMAC10.html) 1968-12-31
AT278906B (de) 1970-02-25
IL30464A0 (en) 1968-09-26
GB1226814A (cg-RX-API-DMAC10.html) 1971-03-31
NL6811007A (cg-RX-API-DMAC10.html) 1969-02-06
FR1578320A (cg-RX-API-DMAC10.html) 1969-08-14
US3507756A (en) 1970-04-21
IL30464A (en) 1971-04-28

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