ES337635A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES337635A1
ES337635A1 ES337635A ES337635A ES337635A1 ES 337635 A1 ES337635 A1 ES 337635A1 ES 337635 A ES337635 A ES 337635A ES 337635 A ES337635 A ES 337635A ES 337635 A1 ES337635 A1 ES 337635A1
Authority
ES
Spain
Prior art keywords
coating
silicon
openings
insulating material
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES337635A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES337635A1 publication Critical patent/ES337635A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/694—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks or redeposited masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
ES337635A 1966-03-08 1967-03-06 Un dispositivo semiconductor. Expired ES337635A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53273166A 1966-03-08 1966-03-08
US55649766A 1966-06-09 1966-06-09

Publications (1)

Publication Number Publication Date
ES337635A1 true ES337635A1 (es) 1968-06-16

Family

ID=27063931

Family Applications (2)

Application Number Title Priority Date Filing Date
ES337635A Expired ES337635A1 (es) 1966-03-08 1967-03-06 Un dispositivo semiconductor.
ES349369A Expired ES349369A1 (es) 1966-03-08 1968-01-16 Un metodo para tratar una cara de un cuerpo semiconductor.

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES349369A Expired ES349369A1 (es) 1966-03-08 1968-01-16 Un metodo para tratar una cara de un cuerpo semiconductor.

Country Status (6)

Country Link
BR (2) BR6787595D0 (es)
DE (1) DE1614358C3 (es)
ES (2) ES337635A1 (es)
FR (1) FR1516406A (es)
GB (1) GB1142405A (es)
SE (1) SE346659B (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2658304C2 (de) * 1975-12-24 1984-12-20 Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa Halbleitervorrichtung
GB1548520A (en) * 1976-08-27 1979-07-18 Tokyo Shibaura Electric Co Method of manufacturing a semiconductor device
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
US9577045B2 (en) 2014-08-04 2017-02-21 Fairchild Semiconductor Corporation Silicon carbide power bipolar devices with deep acceptor doping

Also Published As

Publication number Publication date
DE1614358B2 (de) 1973-04-05
DE1614358A1 (de) 1971-05-19
DE1614358C3 (de) 1974-08-22
BR6787595D0 (pt) 1973-01-11
GB1142405A (en) 1969-02-05
FR1516406A (fr) 1968-03-08
BR6787596D0 (pt) 1973-02-15
SE346659B (es) 1972-07-10
ES349369A1 (es) 1969-09-16

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