ES2968152T3 - Formación directa y secuencial de monocapas de nitruro de boro y grafeno sobre sustratos - Google Patents

Formación directa y secuencial de monocapas de nitruro de boro y grafeno sobre sustratos Download PDF

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Publication number
ES2968152T3
ES2968152T3 ES14727142T ES14727142T ES2968152T3 ES 2968152 T3 ES2968152 T3 ES 2968152T3 ES 14727142 T ES14727142 T ES 14727142T ES 14727142 T ES14727142 T ES 14727142T ES 2968152 T3 ES2968152 T3 ES 2968152T3
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ES
Spain
Prior art keywords
metal film
layer
semiconductor substrate
graphene
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES14727142T
Other languages
English (en)
Spanish (es)
Inventor
Michael R Seacrist
Vikas Berry
Phong T Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
Kansas State University
Original Assignee
GlobalWafers Co Ltd
Kansas State University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/890,316 external-priority patent/US9029228B2/en
Application filed by GlobalWafers Co Ltd, Kansas State University filed Critical GlobalWafers Co Ltd
Application granted granted Critical
Publication of ES2968152T3 publication Critical patent/ES2968152T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H10P14/6902—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
    • B32B9/007—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile comprising carbon, e.g. graphite, composite carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • H10P14/24—
    • H10P14/3216—
    • H10P14/3246—
    • H10P14/3406—
    • H10P14/3452—
    • H10P14/6328—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • H10P14/20—
    • H10P14/274—

Landscapes

  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Laminated Bodies (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
ES14727142T 2013-05-09 2014-05-01 Formación directa y secuencial de monocapas de nitruro de boro y grafeno sobre sustratos Active ES2968152T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/890,316 US9029228B2 (en) 2011-10-19 2013-05-09 Direct and sequential formation of monolayers of boron nitride and graphene on substrates
PCT/US2014/036405 WO2014182540A1 (en) 2013-05-09 2014-05-01 Direct and sequential formation of monolayers of boron nitride and graphene on substrates

Publications (1)

Publication Number Publication Date
ES2968152T3 true ES2968152T3 (es) 2024-05-08

Family

ID=50841980

Family Applications (1)

Application Number Title Priority Date Filing Date
ES14727142T Active ES2968152T3 (es) 2013-05-09 2014-05-01 Formación directa y secuencial de monocapas de nitruro de boro y grafeno sobre sustratos

Country Status (5)

Country Link
EP (3) EP4293706A3 (enExample)
JP (3) JP6228293B2 (enExample)
KR (1) KR102202991B1 (enExample)
ES (1) ES2968152T3 (enExample)
WO (1) WO2014182540A1 (enExample)

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JP6213328B2 (ja) * 2014-03-20 2017-10-18 Jsr株式会社 膜形成用組成物、レジスト下層膜及びその形成方法並びにパターン形成方法
GB201514542D0 (en) 2015-08-14 2015-09-30 Thomas Simon C S A method of producing graphene
JP2017037820A (ja) * 2015-08-14 2017-02-16 アルプス電気株式会社 接点材料、接点材料の製造方法、コネクタ、および電子・電気部品
EP3455874B1 (en) * 2016-05-12 2022-12-28 Globalwafers Co., Ltd. Direct formation of hexagonal boron nitride on silicon based dielectrics
CN110167876B (zh) 2017-01-06 2022-08-30 国立研究开发法人科学技术振兴机构 六方晶氮化硼薄膜及其制造方法
CN107164739B (zh) * 2017-06-12 2023-03-10 中国科学技术大学 Cvd生长多层异质结的方法和装置
KR101971550B1 (ko) * 2017-07-26 2019-04-23 주식회사 오투마 섬모를 이용한 방열장치
CN109534328B (zh) * 2017-09-22 2022-06-24 天津大学 一种二维氮掺杂石墨烯及其制备方法
KR102014132B1 (ko) * 2017-11-28 2019-08-26 광운대학교 산학협력단 고성능 ｉｇｚｏ ｔｆｔ를 위한 저온 용액 공정 기반의 고품질 ａｌ２ｏ３ ｂｎ 절연막 제조 방법 및 그 ｉｇｚｏ ｔｆｔ
KR101986788B1 (ko) * 2017-11-30 2019-06-07 한국세라믹기술원 단결정 성장 방법 및 중간 적층체
KR102123016B1 (ko) * 2018-02-28 2020-06-16 한국에너지기술연구원 기상반응에 의한 질화붕소 증착코팅 방법
KR102783987B1 (ko) * 2018-08-03 2025-03-21 삼성전자주식회사 나노결정질 그래핀의 형성방법 및 이를 포함하는 소자
KR102072580B1 (ko) 2018-11-06 2020-02-03 한국과학기술연구원 헥사고날 보론 니트라이드 박막의 제조 방법 및 이를 이용한 다층 구조의 제조 방법 및 스위칭 소자의 제조 방법
JP6829920B1 (ja) * 2019-03-14 2021-02-17 国立大学法人東京工業大学 ホウ素シートを用いた導電性および誘電体デバイス
CN110155991A (zh) * 2019-04-24 2019-08-23 华东师范大学 一种氧化还原石墨烯和氮掺杂石墨烯的制备方法
US11289582B2 (en) 2019-05-23 2022-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Single-crystal hexagonal boron nitride layer and method forming same
KR102837989B1 (ko) * 2019-07-31 2025-07-24 주식회사 엘티아이 2d 물질 제조장치
DE102019129789A1 (de) * 2019-11-05 2021-05-06 Aixtron Se Verfahren zum Abscheiden einer zweidimensionalen Schicht sowie CVD-Reaktor
CN111072022A (zh) * 2019-12-11 2020-04-28 中国科学院上海微系统与信息技术研究所 一种石墨薄膜的制备方法
KR102314020B1 (ko) * 2020-05-06 2021-10-15 아주대학교산학협력단 육방정계 질화붕소/그래핀 2차원 복합 소재 제조방법
CN113979429B (zh) * 2021-10-19 2023-04-07 中国科学院上海微系统与信息技术研究所 六方氮化硼表面扭转双层石墨烯及其制备方法
KR20230152454A (ko) 2022-04-27 2023-11-03 삼성전자주식회사 나노결정질 질화붕소막, 이를 포함하는 이미지 센서 및 전계 효과 트랜지스터, 및 나노결정질 질화붕소막의 제조 방법

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WO2012148439A1 (en) * 2011-04-25 2012-11-01 William Marsh Rice University Direct growth of graphene films on non-catalyst surfaces
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JP5772299B2 (ja) * 2011-06-29 2015-09-02 富士通株式会社 半導体デバイス及びその製造方法
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Also Published As

Publication number Publication date
EP4293706A3 (en) 2024-03-13
KR102202991B1 (ko) 2021-01-14
EP4293706A2 (en) 2023-12-20
EP4293707A2 (en) 2023-12-20
EP2994933C0 (en) 2023-11-01
JP6488350B2 (ja) 2019-03-20
EP4293707A3 (en) 2024-03-27
JP6228293B2 (ja) 2017-11-08
JP2016526286A (ja) 2016-09-01
EP2994933B1 (en) 2023-11-01
WO2014182540A1 (en) 2014-11-13
JP2018050052A (ja) 2018-03-29
EP2994933A1 (en) 2016-03-16
JP2019125793A (ja) 2019-07-25
JP6567208B2 (ja) 2019-08-28
KR20160036012A (ko) 2016-04-01

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