ES2667743T3 - Fuente óptica - Google Patents
Fuente óptica Download PDFInfo
- Publication number
- ES2667743T3 ES2667743T3 ES14749961.0T ES14749961T ES2667743T3 ES 2667743 T3 ES2667743 T3 ES 2667743T3 ES 14749961 T ES14749961 T ES 14749961T ES 2667743 T3 ES2667743 T3 ES 2667743T3
- Authority
- ES
- Spain
- Prior art keywords
- optical
- filter
- laser
- reflector
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 258
- 230000008859 change Effects 0.000 claims abstract description 15
- 230000004044 response Effects 0.000 claims abstract description 13
- 238000004891 communication Methods 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 10
- 238000000926 separation method Methods 0.000 claims description 6
- 238000005267 amalgamation Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000000429 assembly Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 101100030140 Chlamydia pneumoniae pmp11 gene Proteins 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1062—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06246—Controlling other output parameters than intensity or frequency controlling the phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4006—Injection locking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/163—Single longitudinal mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
- Microelectronics & Electronic Packaging (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB201313550 | 2013-07-30 | ||
| GB1313550.4A GB2516679C (en) | 2013-07-30 | 2013-07-30 | Optical source |
| PCT/GB2014/052326 WO2015015193A1 (en) | 2013-07-30 | 2014-07-30 | Optical source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2667743T3 true ES2667743T3 (es) | 2018-05-14 |
Family
ID=49167138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES14749961.0T Active ES2667743T3 (es) | 2013-07-30 | 2014-07-30 | Fuente óptica |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10243327B2 (enExample) |
| EP (1) | EP3028352B1 (enExample) |
| JP (1) | JP6735666B2 (enExample) |
| DK (1) | DK3028352T3 (enExample) |
| ES (1) | ES2667743T3 (enExample) |
| GB (1) | GB2516679C (enExample) |
| PL (1) | PL3028352T3 (enExample) |
| PT (1) | PT3028352T (enExample) |
| WO (1) | WO2015015193A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2570440A (en) * | 2017-12-19 | 2019-07-31 | Rushmere Tech Limited | Optical source and method of assembling an optical source |
| JP7110081B2 (ja) * | 2018-12-18 | 2022-08-01 | 浜松ホトニクス株式会社 | 制御装置、光学フィルタシステム、制御方法 |
| GB202104651D0 (en) | 2021-03-31 | 2021-05-12 | Rushmere Tech Limited | Optical apparatus for us in an optical network |
| US20240159948A1 (en) * | 2022-11-15 | 2024-05-16 | Lumentum Operations Llc | Thin film narrow bandwidth transmission filter for optical emitters |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02250384A (ja) * | 1989-03-24 | 1990-10-08 | Nippon Telegr & Teleph Corp <Ntt> | 波長可変半導体レーザ光源装置 |
| JP3450180B2 (ja) * | 1998-04-20 | 2003-09-22 | 日本電気株式会社 | 波長可変レーザー |
| JP2000035554A (ja) * | 1998-04-23 | 2000-02-02 | Furukawa Electric Co Ltd:The | 光波長調整装置及びそれを用いた光源、光波長分離装置、波長多重光通信システム |
| US6282340B1 (en) | 1998-04-23 | 2001-08-28 | The Furukawa Electric Co., Ltd. | Light wavelength tuning device and light source optical demultiplexer and wavelength division multiplexed optical communication system using the tuning device |
| JPH11305035A (ja) * | 1998-04-27 | 1999-11-05 | Fujitsu Ltd | 温度依存性のない多層膜フィルタとその製造方法 |
| US6496523B1 (en) | 1999-05-25 | 2002-12-17 | Cirrex Corp. | Optical feedback assembly |
| JP3383942B2 (ja) * | 1999-08-02 | 2003-03-10 | Ｈｏｙａ株式会社 | Ｗｄｍ光学フィルター用ガラス基板、ｗｄｍ光学フィルター、ｗｄｍ用光合分波器 |
| WO2001011739A1 (en) * | 1999-08-10 | 2001-02-15 | Coretek, Inc. | Single etalon optical wavelength reference device |
| JP2002190643A (ja) * | 2000-12-20 | 2002-07-05 | Nippon Telegr & Teleph Corp <Ntt> | 温度無依存型レーザ |
| US6901088B2 (en) | 2001-07-06 | 2005-05-31 | Intel Corporation | External cavity laser apparatus with orthogonal tuning of laser wavelength and cavity optical pathlength |
| JP2003101137A (ja) * | 2001-09-27 | 2003-04-04 | Kyocera Corp | レーザダイオードモジュール |
| JP2004253782A (ja) * | 2003-01-30 | 2004-09-09 | Sun Tec Kk | 外部共振器型レーザモジュール |
| JP2004317701A (ja) * | 2003-04-15 | 2004-11-11 | Alps Electric Co Ltd | 多層膜光フィルタ及び光学部品 |
| WO2005013439A2 (en) * | 2003-07-03 | 2005-02-10 | Pd-Ld, Inc. | Use of volume bragg gratings for the conditioning of laser emission characteristics |
| DE20317902U1 (de) * | 2003-11-19 | 2005-03-24 | Sacher Joachim | Laserdioden-Anordnung mit externem Resonator |
| US20050123008A1 (en) * | 2003-12-08 | 2005-06-09 | Daiber Andrew J. | Multiple input/output ECDL cavity length and filter temperature control |
| EP1560306B1 (de) * | 2004-01-30 | 2014-11-19 | OSRAM Opto Semiconductors GmbH | Oberflächenemittierender Halbleiterlaser mit einem Interferenzfilter |
| US7257142B2 (en) * | 2004-03-29 | 2007-08-14 | Intel Corporation | Semi-integrated designs for external cavity tunable lasers |
| WO2006008873A1 (ja) * | 2004-07-15 | 2006-01-26 | Nec Corporation | 外部共振器型波長可変レーザ |
| US20060023757A1 (en) * | 2004-07-30 | 2006-02-02 | Aram Mooradian | Apparatus, system, and method for wavelength conversion of mode-locked extended cavity surface emitting semiconductor lasers |
| JP4608334B2 (ja) * | 2005-02-10 | 2011-01-12 | 日本電信電話株式会社 | 半導体光素子の波長調整方法 |
| US7415049B2 (en) * | 2005-03-28 | 2008-08-19 | Axsun Technologies, Inc. | Laser with tilted multi spatial mode resonator tuning element |
| JP2008538163A (ja) * | 2005-03-30 | 2008-10-09 | ノバラックス，インコーポレイティド | 周波数安定化した垂直拡大キャビティ面発光レーザ |
| JP5191143B2 (ja) * | 2006-03-30 | 2013-04-24 | アンリツ株式会社 | 半導体レーザ素子、半導体レーザモジュール、および半導体レーザモジュールを用いたラマン増幅器 |
| JP2008198725A (ja) * | 2007-02-09 | 2008-08-28 | Fibest Ltd | 波長可変光源 |
| JP2008270583A (ja) | 2007-04-23 | 2008-11-06 | Nec Corp | 波長可変光源装置とその制御方法，制御用プログラム |
| JP4882088B2 (ja) * | 2007-05-21 | 2012-02-22 | 日本オプネクスト株式会社 | 波長可変レーザ装置及びその波長制御方法 |
| US8571084B2 (en) * | 2007-08-02 | 2013-10-29 | Technische Universiteit Eindhoven | Semiconductor laser device |
| JP2010073708A (ja) * | 2008-09-16 | 2010-04-02 | Anritsu Corp | 半導体発光素子および外部共振器型レーザ光源 |
| JP2010074028A (ja) * | 2008-09-22 | 2010-04-02 | Opnext Japan Inc | 外部共振器型波長可変レーザモジュール |
| JP2010141090A (ja) * | 2008-12-11 | 2010-06-24 | Opnext Japan Inc | 光送信モジュール |
| WO2010073392A1 (ja) * | 2008-12-26 | 2010-07-01 | 富士通株式会社 | 光信号発生装置及びその調整方法 |
| US20120162662A1 (en) * | 2010-12-27 | 2012-06-28 | Axsun Technologies, Inc. | Actively Mode Locked Laser Swept Source for OCT Medical Imaging |
| US8670470B2 (en) * | 2011-02-25 | 2014-03-11 | Photop Aegis, Inc. | Tunable Laser |
-
2013
- 2013-07-30 GB GB1313550.4A patent/GB2516679C/en active Active
-
2014
- 2014-07-30 JP JP2016530606A patent/JP6735666B2/ja active Active
- 2014-07-30 PL PL14749961T patent/PL3028352T3/pl unknown
- 2014-07-30 US US14/908,918 patent/US10243327B2/en active Active
- 2014-07-30 WO PCT/GB2014/052326 patent/WO2015015193A1/en not_active Ceased
- 2014-07-30 DK DK14749961.0T patent/DK3028352T3/en active
- 2014-07-30 PT PT147499610T patent/PT3028352T/pt unknown
- 2014-07-30 ES ES14749961.0T patent/ES2667743T3/es active Active
- 2014-07-30 EP EP14749961.0A patent/EP3028352B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| GB201313550D0 (en) | 2013-09-11 |
| GB2516679B (en) | 2018-06-06 |
| WO2015015193A1 (en) | 2015-02-05 |
| DK3028352T3 (en) | 2018-05-22 |
| JP2016528733A (ja) | 2016-09-15 |
| PT3028352T (pt) | 2018-05-09 |
| GB2516679C (en) | 2019-08-28 |
| EP3028352B1 (en) | 2018-02-21 |
| JP6735666B2 (ja) | 2020-08-05 |
| EP3028352A1 (en) | 2016-06-08 |
| PL3028352T3 (pl) | 2018-07-31 |
| US20160164255A1 (en) | 2016-06-09 |
| US10243327B2 (en) | 2019-03-26 |
| GB2516679A (en) | 2015-02-04 |
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