GB2516679C - Optical source - Google Patents

Optical source

Info

Publication number
GB2516679C
GB2516679C GB1313550.4A GB201313550A GB2516679C GB 2516679 C GB2516679 C GB 2516679C GB 201313550 A GB201313550 A GB 201313550A GB 2516679 C GB2516679 C GB 2516679C
Authority
GB
United Kingdom
Prior art keywords
optical source
optical
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1313550.4A
Other languages
English (en)
Other versions
GB201313550D0 (en
GB2516679B (en
GB2516679A (en
Inventor
James Poustie Alistair
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rushmere Tech Ltd
Original Assignee
Rushmere Tech Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rushmere Tech Ltd filed Critical Rushmere Tech Ltd
Priority to GB1313550.4A priority Critical patent/GB2516679C/en
Publication of GB201313550D0 publication Critical patent/GB201313550D0/en
Priority to DK14749961.0T priority patent/DK3028352T3/en
Priority to ES14749961.0T priority patent/ES2667743T3/es
Priority to PL14749961T priority patent/PL3028352T3/pl
Priority to PT147499610T priority patent/PT3028352T/pt
Priority to EP14749961.0A priority patent/EP3028352B1/en
Priority to JP2016530606A priority patent/JP6735666B2/ja
Priority to PCT/GB2014/052326 priority patent/WO2015015193A1/en
Priority to US14/908,918 priority patent/US10243327B2/en
Publication of GB2516679A publication Critical patent/GB2516679A/en
Publication of GB2516679B publication Critical patent/GB2516679B/en
Application granted granted Critical
Publication of GB2516679C publication Critical patent/GB2516679C/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065Mode locking; Mode suppression; Mode selection ; Self pulsating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/1062Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233Controlling other output parameters than intensity or frequency
    • H01S5/06246Controlling other output parameters than intensity or frequency controlling the phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255Controlling the frequency of the radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651Mode control
    • H01S5/0653Mode suppression, e.g. specific multimode
    • H01S5/0654Single longitudinal mode emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0656Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/142External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4006Injection locking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00Functional characteristics
    • H01S2301/16Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/163Single longitudinal mode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4068Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Microelectronics & Electronic Packaging (AREA)
GB1313550.4A 2013-07-30 2013-07-30 Optical source Active GB2516679C (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
GB1313550.4A GB2516679C (en) 2013-07-30 2013-07-30 Optical source
JP2016530606A JP6735666B2 (ja) 2013-07-30 2014-07-30 光学ソース
US14/908,918 US10243327B2 (en) 2013-07-30 2014-07-30 Optical source
PL14749961T PL3028352T3 (pl) 2013-07-30 2014-07-30 Źródło optyczne
PT147499610T PT3028352T (pt) 2013-07-30 2014-07-30 Fonte ótica
EP14749961.0A EP3028352B1 (en) 2013-07-30 2014-07-30 Optical source
DK14749961.0T DK3028352T3 (en) 2013-07-30 2014-07-30 OPTICAL SOURCE
PCT/GB2014/052326 WO2015015193A1 (en) 2013-07-30 2014-07-30 Optical source
ES14749961.0T ES2667743T3 (es) 2013-07-30 2014-07-30 Fuente óptica

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1313550.4A GB2516679C (en) 2013-07-30 2013-07-30 Optical source

Publications (4)

Publication Number Publication Date
GB201313550D0 GB201313550D0 (en) 2013-09-11
GB2516679A GB2516679A (en) 2015-02-04
GB2516679B GB2516679B (en) 2018-06-06
GB2516679C true GB2516679C (en) 2019-08-28

Family

ID=49167138

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1313550.4A Active GB2516679C (en) 2013-07-30 2013-07-30 Optical source

Country Status (9)

Country Link
US (1) US10243327B2 (enExample)
EP (1) EP3028352B1 (enExample)
JP (1) JP6735666B2 (enExample)
DK (1) DK3028352T3 (enExample)
ES (1) ES2667743T3 (enExample)
GB (1) GB2516679C (enExample)
PL (1) PL3028352T3 (enExample)
PT (1) PT3028352T (enExample)
WO (1) WO2015015193A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2570440A (en) * 2017-12-19 2019-07-31 Rushmere Tech Limited Optical source and method of assembling an optical source
JP7110081B2 (ja) * 2018-12-18 2022-08-01 浜松ホトニクス株式会社 制御装置、光学フィルタシステム、制御方法
GB202104651D0 (en) 2021-03-31 2021-05-12 Rushmere Tech Limited Optical apparatus for us in an optical network
US20240159948A1 (en) * 2022-11-15 2024-05-16 Lumentum Operations Llc Thin film narrow bandwidth transmission filter for optical emitters

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JPH02250384A (ja) * 1989-03-24 1990-10-08 Nippon Telegr & Teleph Corp <Ntt> 波長可変半導体レーザ光源装置
JP3450180B2 (ja) * 1998-04-20 2003-09-22 日本電気株式会社 波長可変レーザー
JP2000035554A (ja) * 1998-04-23 2000-02-02 Furukawa Electric Co Ltd:The 光波長調整装置及びそれを用いた光源、光波長分離装置、波長多重光通信システム
US6282340B1 (en) 1998-04-23 2001-08-28 The Furukawa Electric Co., Ltd. Light wavelength tuning device and light source optical demultiplexer and wavelength division multiplexed optical communication system using the tuning device
JPH11305035A (ja) * 1998-04-27 1999-11-05 Fujitsu Ltd 温度依存性のない多層膜フィルタとその製造方法
US6496523B1 (en) 1999-05-25 2002-12-17 Cirrex Corp. Optical feedback assembly
JP3383942B2 (ja) * 1999-08-02 2003-03-10 Hoya株式会社 Wdm光学フィルター用ガラス基板、wdm光学フィルター、wdm用光合分波器
WO2001011739A1 (en) * 1999-08-10 2001-02-15 Coretek, Inc. Single etalon optical wavelength reference device
JP2002190643A (ja) * 2000-12-20 2002-07-05 Nippon Telegr & Teleph Corp <Ntt> 温度無依存型レーザ
US6901088B2 (en) 2001-07-06 2005-05-31 Intel Corporation External cavity laser apparatus with orthogonal tuning of laser wavelength and cavity optical pathlength
JP2003101137A (ja) * 2001-09-27 2003-04-04 Kyocera Corp レーザダイオードモジュール
JP2004253782A (ja) * 2003-01-30 2004-09-09 Sun Tec Kk 外部共振器型レーザモジュール
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WO2005013439A2 (en) * 2003-07-03 2005-02-10 Pd-Ld, Inc. Use of volume bragg gratings for the conditioning of laser emission characteristics
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Also Published As

Publication number Publication date
GB201313550D0 (en) 2013-09-11
GB2516679B (en) 2018-06-06
WO2015015193A1 (en) 2015-02-05
DK3028352T3 (en) 2018-05-22
JP2016528733A (ja) 2016-09-15
PT3028352T (pt) 2018-05-09
EP3028352B1 (en) 2018-02-21
JP6735666B2 (ja) 2020-08-05
ES2667743T3 (es) 2018-05-14
EP3028352A1 (en) 2016-06-08
PL3028352T3 (pl) 2018-07-31
US20160164255A1 (en) 2016-06-09
US10243327B2 (en) 2019-03-26
GB2516679A (en) 2015-02-04

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