ES2185303T3 - Procedimiento de grabado magnetico, en particular para la grabacion magnetica o magneto-optica. - Google Patents

Procedimiento de grabado magnetico, en particular para la grabacion magnetica o magneto-optica.

Info

Publication number
ES2185303T3
ES2185303T3 ES99900523T ES99900523T ES2185303T3 ES 2185303 T3 ES2185303 T3 ES 2185303T3 ES 99900523 T ES99900523 T ES 99900523T ES 99900523 T ES99900523 T ES 99900523T ES 2185303 T3 ES2185303 T3 ES 2185303T3
Authority
ES
Spain
Prior art keywords
magnetic
sup
magneto
optical recording
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES99900523T
Other languages
English (en)
Inventor
Claude Chappert
Harry Bernas
Jacques Ferre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Application granted granted Critical
Publication of ES2185303T3 publication Critical patent/ES2185303T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/855—Coating only part of a support with a magnetic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
    • G11B5/746—Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/303—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/123—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Record Carriers (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Hard Magnetic Materials (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Abstract

Procedimiento de inscripción según el cual se irradia un material mediante un haz de iones ligeros, como unos iones He+, con una energía del orden de o inferior al centenar de KeV, caracterizado porque el mencionado material es un material formado por capas finas enterradas depositadas sobre un sustrato, y porque se irradian una o varias zonas de un tamaño del orden o inferior a un micrómetro, siendo la dosis de irradiación controlada para ser de 1016 iones/cm2 o inferior, modificando la irradiación la composición de los planos atómicos en el material en una interfase entre dos capas de éste.
ES99900523T 1998-01-12 1999-01-12 Procedimiento de grabado magnetico, en particular para la grabacion magnetica o magneto-optica. Expired - Lifetime ES2185303T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9800199A FR2773632B1 (fr) 1998-01-12 1998-01-12 Procede de gravure magnetique, pour notamment l'enregistrement magnetique ou magneto-optique

Publications (1)

Publication Number Publication Date
ES2185303T3 true ES2185303T3 (es) 2003-04-16

Family

ID=9521658

Family Applications (1)

Application Number Title Priority Date Filing Date
ES99900523T Expired - Lifetime ES2185303T3 (es) 1998-01-12 1999-01-12 Procedimiento de grabado magnetico, en particular para la grabacion magnetica o magneto-optica.

Country Status (13)

Country Link
US (1) US7132222B2 (es)
EP (1) EP1050056B1 (es)
JP (1) JP4511026B2 (es)
KR (1) KR100740844B1 (es)
CN (1) CN1183529C (es)
AT (1) ATE228266T1 (es)
AU (1) AU737624B2 (es)
CA (1) CA2318350C (es)
DE (1) DE69904019T2 (es)
ES (1) ES2185303T3 (es)
FR (1) FR2773632B1 (es)
NO (1) NO320305B1 (es)
WO (1) WO1999035657A1 (es)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
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FR2773632B1 (fr) * 1998-01-12 2000-03-31 Centre Nat Rech Scient Procede de gravure magnetique, pour notamment l'enregistrement magnetique ou magneto-optique
KR100341843B1 (ko) * 2000-04-12 2002-06-24 황정남 자성체내의 자화 용이축 회전 및 다중 자화축 물질 제조방법
FR2846459B1 (fr) * 2002-10-25 2006-08-04 Centre Nat Rech Scient Procede de realisation d'une nanostructure magnetique ayant des performances dynamiques ameliorees, nanostructure et memoires magnetiques obtenues et procedes de retournement de leur aimantation.
US20060044946A1 (en) * 2002-11-01 2006-03-02 Koninklijke Philips Electronics, N.V. Processing sheme for domain expansion rom media
AU2003279232A1 (en) * 2003-10-09 2005-05-26 Seagate Technology Llc Method and system for magnetic recording using self-organized magnetic nanoparticles
US7029773B2 (en) 2003-10-10 2006-04-18 Seagate Technology Llc Method and system for magnetic recording using self-organized magnetic nanoparticles
DE102005015745A1 (de) 2005-04-06 2006-10-12 Forschungszentrum Karlsruhe Gmbh Ferro- oder ferrimagnetische Schicht, Verfahren zu ihrer Herstellung und ihre Verwendung
US20070231826A1 (en) * 2005-10-19 2007-10-04 General Electric Company Article and assembly for magnetically directed self assembly
US8022416B2 (en) * 2005-10-19 2011-09-20 General Electric Company Functional blocks for assembly
US7926176B2 (en) * 2005-10-19 2011-04-19 General Electric Company Methods for magnetically directed self assembly
GB2433362B (en) * 2005-12-16 2008-04-09 Ingenia Technology Ltd Modification of magnetic materials
US8072577B2 (en) * 2006-06-05 2011-12-06 Macronix International Co., Ltd. Lithography systems and processes
JP4309944B2 (ja) * 2008-01-11 2009-08-05 株式会社東芝 磁気記録媒体の製造方法
US8674212B2 (en) * 2008-01-15 2014-03-18 General Electric Company Solar cell and magnetically self-assembled solar cell assembly
US20090201722A1 (en) * 2008-02-12 2009-08-13 Kamesh Giridhar Method including magnetic domain patterning using plasma ion implantation for mram fabrication
US8535766B2 (en) * 2008-10-22 2013-09-17 Applied Materials, Inc. Patterning of magnetic thin film using energized ions
US20090199768A1 (en) * 2008-02-12 2009-08-13 Steven Verhaverbeke Magnetic domain patterning using plasma ion implantation
US8551578B2 (en) * 2008-02-12 2013-10-08 Applied Materials, Inc. Patterning of magnetic thin film using energized ions and thermal excitation
JP5487561B2 (ja) * 2008-06-04 2014-05-07 富士通株式会社 磁気記録媒体、当該の磁気記録媒体を備える磁気記録再生装置、および、当該の磁気記録媒体の製造方法
JP4468469B2 (ja) 2008-07-25 2010-05-26 株式会社東芝 磁気記録媒体の製造方法
JP4489132B2 (ja) 2008-08-22 2010-06-23 株式会社東芝 磁気記録媒体の製造方法
JP4551957B2 (ja) 2008-12-12 2010-09-29 株式会社東芝 磁気記録媒体の製造方法
JP5394729B2 (ja) * 2008-12-26 2014-01-22 株式会社アルバック 磁気記憶媒体製造方法、磁気記憶媒体、および情報記憶装置
JP4568367B2 (ja) * 2009-02-20 2010-10-27 株式会社東芝 磁気記録媒体の製造方法
JP4575499B2 (ja) 2009-02-20 2010-11-04 株式会社東芝 磁気記録媒体の製造方法
JP4575498B2 (ja) 2009-02-20 2010-11-04 株式会社東芝 磁気記録媒体の製造方法
US9685186B2 (en) * 2009-02-27 2017-06-20 Applied Materials, Inc. HDD pattern implant system
SG10201401235YA (en) * 2009-04-10 2014-09-26 Applied Materials Inc Use special ion source apparatus and implant with molecular ions to process hdd (high density magnetic disks) with patterned magnetic domains
US8431911B2 (en) * 2009-04-13 2013-04-30 Applied Materials, Inc. HDD pattern apparatus using laser, E-beam, or focused ion beam
WO2010120805A2 (en) * 2009-04-13 2010-10-21 Applied Materials, Inc. Modification of magnetic properties of films using ion and neutral beam implantation
FR2951740B1 (fr) * 2009-10-23 2012-04-20 Univ Paris Sud Procede de realisation d'un cristal magneto-photonique, cristal magneto-photonique et composant comprenant un tel cristal.
DE202010010593U1 (de) * 2010-07-23 2011-10-24 Different Power Ideas Gmbh Maschine zur Wandlung von elektrischer und/oder magnetischer Energie in mechanische Energie bzw. zur Wandlung von mechanischer Energie in elektrische Energie
JP5238780B2 (ja) 2010-09-17 2013-07-17 株式会社東芝 磁気記録媒体とその製造方法及び磁気記録装置
TW201324885A (zh) * 2011-09-14 2013-06-16 Applied Materials Inc 製造高密度磁性介質之設備及方法(一)

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Also Published As

Publication number Publication date
CN1183529C (zh) 2005-01-05
NO320305B1 (no) 2005-11-21
AU1974499A (en) 1999-07-26
US20040259036A1 (en) 2004-12-23
EP1050056B1 (fr) 2002-11-20
NO20003570D0 (no) 2000-07-11
NO20003570L (no) 2000-09-08
ATE228266T1 (de) 2002-12-15
JP2002501300A (ja) 2002-01-15
AU737624B2 (en) 2001-08-23
CA2318350A1 (fr) 1999-07-15
US7132222B2 (en) 2006-11-07
DE69904019T2 (de) 2003-09-25
EP1050056A1 (fr) 2000-11-08
WO1999035657A1 (fr) 1999-07-15
FR2773632A1 (fr) 1999-07-16
CA2318350C (fr) 2015-04-28
CN1289442A (zh) 2001-03-28
JP4511026B2 (ja) 2010-07-28
KR20010034090A (ko) 2001-04-25
DE69904019D1 (de) 2003-01-02
KR100740844B1 (ko) 2007-07-20
FR2773632B1 (fr) 2000-03-31

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