JPS5479524A - Memory system - Google Patents
Memory systemInfo
- Publication number
- JPS5479524A JPS5479524A JP14677777A JP14677777A JPS5479524A JP S5479524 A JPS5479524 A JP S5479524A JP 14677777 A JP14677777 A JP 14677777A JP 14677777 A JP14677777 A JP 14677777A JP S5479524 A JPS5479524 A JP S5479524A
- Authority
- JP
- Japan
- Prior art keywords
- information
- substrate
- memory
- implanted
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/23—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes or William tubes
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
PURPOSE:To constitute a memory system which can superpose and store different information by storing information while making the desired element in the desired pattern on the surface of a substrate, by scanning on the surface by charged particle beams, and by reading out information over an energy analysis of generated X rays. CONSTITUTION:Memory substrate 1 employs a Si singel-crystal substrate and Al ions are implanted as large as fixed area at a fixed voltage via the mask previously supplied with required information. Next, As ions are implanted as large as fixed area at a fixed voltage via the mask stored with another information. In this way, the memory part is provided with four regions where no ion, either Al or As and both As and A are injected. To read information, deflective scanning on memory substrate 1 by electron beam 2 is done, and X ray 3 generated through the irradiation of this electron beam is detected by wavelength-dispersive X-ray spectroscope 4, thereby separating different information.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14677777A JPS5479524A (en) | 1977-12-07 | 1977-12-07 | Memory system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14677777A JPS5479524A (en) | 1977-12-07 | 1977-12-07 | Memory system |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5479524A true JPS5479524A (en) | 1979-06-25 |
Family
ID=15415292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14677777A Pending JPS5479524A (en) | 1977-12-07 | 1977-12-07 | Memory system |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5479524A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5735202A (en) * | 1980-08-11 | 1982-02-25 | Mitsubishi Heavy Ind Ltd | Boiler plant |
-
1977
- 1977-12-07 JP JP14677777A patent/JPS5479524A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5735202A (en) * | 1980-08-11 | 1982-02-25 | Mitsubishi Heavy Ind Ltd | Boiler plant |
JPS6239321B2 (en) * | 1980-08-11 | 1987-08-22 | Mitsubishi Heavy Ind Ltd |
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