ES2129652T3 - Carburo de silicio de alta resistencia y procedimiento para su fabricacion. - Google Patents

Carburo de silicio de alta resistencia y procedimiento para su fabricacion.

Info

Publication number
ES2129652T3
ES2129652T3 ES94921662T ES94921662T ES2129652T3 ES 2129652 T3 ES2129652 T3 ES 2129652T3 ES 94921662 T ES94921662 T ES 94921662T ES 94921662 T ES94921662 T ES 94921662T ES 2129652 T3 ES2129652 T3 ES 2129652T3
Authority
ES
Spain
Prior art keywords
sic
procedure
manufacture
silicon carbide
high strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES94921662T
Other languages
English (en)
Inventor
Ekkehard Niemann
Jurgen Schneider
Harald Muller
Karin Maier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mercedes Benz Group AG
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
DaimlerChrysler AG
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6494211&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES2129652(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by DaimlerChrysler AG, Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical DaimlerChrysler AG
Application granted granted Critical
Publication of ES2129652T3 publication Critical patent/ES2129652T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Ceramic Products (AREA)

Abstract

EL OBJETIVO DE LA INVENCION ES UN PROCESO PARA LA ELABORACION DE SIC DE ALTA RESISTENCIA A PARTIR DE UN MATERIAL DE PARTIDA DE BAJA RESISTENCIA. SE COMPONE DE TAL MODO, QUE LOS NIVELES DONADORES PLANOS DE UNA IMPUREZA DE NITROGENO PREVALECIENTE SON SOBRECOMPENSADOS MEDIANTE ADMINISTRACION DE UN ELEMENTO TRIVALENTE, SIENDO LA CONCENTRACION DEL INDICADO ELEMENTO EN EL SIC TAL, QUE CAMBIA EL TIPO DE CONDUCTIVIDAD DESDE UNA CONDUCTIVIDAD N A UNA CONDUCTIVIDAD P. ADICIONALMENTE SE AÑADE UN ELEMENTO DE TRANSICION TENDIENDO DONADORES APROXIMADOS EN EL MEDIO DEL ESPACIO DE ENERGIA SIC, DE MODO QUE LOS NIVELES DE ACEPTADOR EN EXCESO SON COMPENSADOS Y SE CONSIGUE UNA RESISTENCIA ESPECIFICA ALTA.
ES94921662T 1993-07-31 1994-07-21 Carburo de silicio de alta resistencia y procedimiento para su fabricacion. Expired - Lifetime ES2129652T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4325804A DE4325804C3 (de) 1993-07-31 1993-07-31 Verfahren zum Herstellen von hochohmigem Siliziumkarbid

Publications (1)

Publication Number Publication Date
ES2129652T3 true ES2129652T3 (es) 1999-06-16

Family

ID=6494211

Family Applications (1)

Application Number Title Priority Date Filing Date
ES94921662T Expired - Lifetime ES2129652T3 (es) 1993-07-31 1994-07-21 Carburo de silicio de alta resistencia y procedimiento para su fabricacion.

Country Status (7)

Country Link
US (1) US5856231A (es)
EP (1) EP0711363B1 (es)
JP (1) JP3307647B2 (es)
AT (1) ATE176552T1 (es)
DE (2) DE4325804C3 (es)
ES (1) ES2129652T3 (es)
WO (1) WO1995004171A1 (es)

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EP0956594A1 (en) 1997-01-31 1999-11-17 Northrop Grumman Corporation High resistivity silicon carbide substrates for high power microwave devices
AU8261498A (en) * 1997-06-23 1999-01-04 James Albert Cooper Jr. Power devices in wide bandgap semiconductor
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6396080B2 (en) 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
US7009209B2 (en) * 2001-01-03 2006-03-07 Mississippi State University Research And Technology Corporation (Rtc) Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
US6507046B2 (en) * 2001-05-11 2003-01-14 Cree, Inc. High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
JP4733882B2 (ja) * 2001-09-28 2011-07-27 新日本製鐵株式会社 炭化珪素単結晶及びその製造方法並びに炭化珪素単結晶育成用炭化珪素結晶原料
SE520968C2 (sv) * 2001-10-29 2003-09-16 Okmetic Oyj Högresistiv monokristallin kiselkarbid och metod för dess framställning
JP4118045B2 (ja) * 2001-12-07 2008-07-16 富士通株式会社 半導体装置
SE525574C2 (sv) * 2002-08-30 2005-03-15 Okmetic Oyj Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter
US7275357B2 (en) * 2004-03-30 2007-10-02 Cnh America Llc Cotton module program control using yield monitor signal
JP5068423B2 (ja) 2004-10-13 2012-11-07 新日本製鐵株式会社 炭化珪素単結晶インゴット、炭化珪素単結晶ウェハ及びその製造方法
JP4470690B2 (ja) * 2004-10-29 2010-06-02 住友電気工業株式会社 炭化珪素単結晶、炭化珪素基板および炭化珪素単結晶の製造方法
WO2006070480A1 (ja) * 2004-12-27 2006-07-06 Nippon Steel Corporation 炭化珪素単結晶、炭化珪素単結晶ウェハ及びその製造方法
US7772601B2 (en) * 2005-02-04 2010-08-10 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and method of fabricating the same
US7276117B2 (en) * 2005-02-09 2007-10-02 Cree Dulles, Inc. Method of forming semi-insulating silicon carbide single crystal
US7476594B2 (en) * 2005-03-30 2009-01-13 Cree, Inc. Methods of fabricating silicon nitride regions in silicon carbide and resulting structures
US8698184B2 (en) 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
DE102008063129B4 (de) * 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat
DE102008063124B4 (de) 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat
US8377806B2 (en) 2010-04-28 2013-02-19 Cree, Inc. Method for controlled growth of silicon carbide and structures produced by same
CN104364428B (zh) 2012-05-24 2017-09-05 Ⅱ－Ⅵ公司 钒补偿的NU型和PI型SI SiC单晶及其晶体生长方法
JP6419414B2 (ja) 2013-03-22 2018-11-07 株式会社東芝 ＳｉＣエピタキシャルウェハおよび半導体装置
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US9245944B2 (en) 2013-07-02 2016-01-26 Infineon Technologies Ag Silicon carbide device and a method for manufacturing a silicon carbide device
JP6341056B2 (ja) 2014-10-24 2018-06-13 日亜化学工業株式会社 サブマウント及びその製造方法並びに半導体レーザ装置及びその製造方法
US9627473B2 (en) * 2015-09-08 2017-04-18 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation in III-nitride material semiconductor structures
US9806182B2 (en) * 2015-09-08 2017-10-31 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using elemental diboride diffusion barrier regions
CN115594508A (zh) 2017-03-29 2023-01-13 帕里杜斯有限公司（Us） 碳化硅空间形体及形成球状体的方法
US10793972B1 (en) 2017-07-11 2020-10-06 Ii-Vi Delaware, Inc. High quality silicon carbide crystals and method of making the same
WO2020255343A1 (ja) * 2019-06-20 2020-12-24 三菱電機株式会社 炭化ケイ素単結晶、半導体素子
US12006591B2 (en) * 2020-03-02 2024-06-11 Ii-Vi Advanced Materials, Llc Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material
CN113990938B (zh) 2020-07-27 2024-12-06 环球晶圆股份有限公司 碳化硅晶片及其制备方法
CN119010820B (zh) * 2024-10-24 2025-03-14 山东大学 一种声表面波器件的制备方法及声表面波器件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
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US344071A (en) * 1886-06-22 Robert w
US3344071A (en) * 1963-09-25 1967-09-26 Texas Instruments Inc High resistivity chromium doped gallium arsenide and process of making same
CH510328A (de) * 1969-10-01 1971-07-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden
JPS58191419A (ja) * 1982-05-04 1983-11-08 Nippon Telegr & Teleph Corp <Ntt> 半絶縁性ガリウムヒ素基板
FR2596777B1 (fr) * 1986-04-08 1994-01-21 Etat Francais Cnet Procede de preparation de semi-isolants 3-5 mono-cristallins par dopage et application des semi-isolants ainsi obtenus
US5087576A (en) * 1987-10-26 1992-02-11 North Carolina State University Implantation and electrical activation of dopants into monocrystalline silicon carbide
US5200805A (en) * 1987-12-28 1993-04-06 Hughes Aircraft Company Silicon carbide:metal carbide alloy semiconductor and method of making the same
US5135885A (en) * 1989-03-27 1992-08-04 Sharp Corporation Method of manufacturing silicon carbide fets
JPH0383332A (ja) * 1989-08-28 1991-04-09 Sharp Corp 炭化珪素半導体装置の製造方法
JP3146694B2 (ja) * 1992-11-12 2001-03-19 富士電機株式会社 炭化けい素ｍｏｓｆｅｔおよび炭化けい素ｍｏｓｆｅｔの製造方法

Also Published As

Publication number Publication date
DE4325804C3 (de) 2001-08-09
DE4325804A1 (de) 1995-02-02
ATE176552T1 (de) 1999-02-15
DE4325804C2 (de) 1997-07-24
JPH09500861A (ja) 1997-01-28
EP0711363A1 (de) 1996-05-15
WO1995004171A1 (de) 1995-02-09
US5856231A (en) 1999-01-05
EP0711363B1 (de) 1999-02-03
JP3307647B2 (ja) 2002-07-24
DE59407776D1 (de) 1999-03-18

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