ES2129652T3 - Carburo de silicio de alta resistencia y procedimiento para su fabricacion. - Google Patents

Carburo de silicio de alta resistencia y procedimiento para su fabricacion.

Info

Publication number
ES2129652T3
ES2129652T3 ES94921662T ES94921662T ES2129652T3 ES 2129652 T3 ES2129652 T3 ES 2129652T3 ES 94921662 T ES94921662 T ES 94921662T ES 94921662 T ES94921662 T ES 94921662T ES 2129652 T3 ES2129652 T3 ES 2129652T3
Authority
ES
Spain
Prior art keywords
sic
procedure
manufacture
silicon carbide
high strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES94921662T
Other languages
English (en)
Inventor
Ekkehard Niemann
Jurgen Schneider
Harald Muller
Karin Maier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Daimler AG
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
DaimlerChrysler AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6494211&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES2129652(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV, DaimlerChrysler AG filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Application granted granted Critical
Publication of ES2129652T3 publication Critical patent/ES2129652T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Abstract

EL OBJETIVO DE LA INVENCION ES UN PROCESO PARA LA ELABORACION DE SIC DE ALTA RESISTENCIA A PARTIR DE UN MATERIAL DE PARTIDA DE BAJA RESISTENCIA. SE COMPONE DE TAL MODO, QUE LOS NIVELES DONADORES PLANOS DE UNA IMPUREZA DE NITROGENO PREVALECIENTE SON SOBRECOMPENSADOS MEDIANTE ADMINISTRACION DE UN ELEMENTO TRIVALENTE, SIENDO LA CONCENTRACION DEL INDICADO ELEMENTO EN EL SIC TAL, QUE CAMBIA EL TIPO DE CONDUCTIVIDAD DESDE UNA CONDUCTIVIDAD N A UNA CONDUCTIVIDAD P. ADICIONALMENTE SE AÑADE UN ELEMENTO DE TRANSICION TENDIENDO DONADORES APROXIMADOS EN EL MEDIO DEL ESPACIO DE ENERGIA SIC, DE MODO QUE LOS NIVELES DE ACEPTADOR EN EXCESO SON COMPENSADOS Y SE CONSIGUE UNA RESISTENCIA ESPECIFICA ALTA.
ES94921662T 1993-07-31 1994-07-21 Carburo de silicio de alta resistencia y procedimiento para su fabricacion. Expired - Lifetime ES2129652T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4325804A DE4325804C3 (de) 1993-07-31 1993-07-31 Verfahren zum Herstellen von hochohmigem Siliziumkarbid

Publications (1)

Publication Number Publication Date
ES2129652T3 true ES2129652T3 (es) 1999-06-16

Family

ID=6494211

Family Applications (1)

Application Number Title Priority Date Filing Date
ES94921662T Expired - Lifetime ES2129652T3 (es) 1993-07-31 1994-07-21 Carburo de silicio de alta resistencia y procedimiento para su fabricacion.

Country Status (7)

Country Link
US (1) US5856231A (es)
EP (1) EP0711363B1 (es)
JP (1) JP3307647B2 (es)
AT (1) ATE176552T1 (es)
DE (2) DE4325804C3 (es)
ES (1) ES2129652T3 (es)
WO (1) WO1995004171A1 (es)

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EP0956594A1 (en) 1997-01-31 1999-11-17 Northrop Grumman Corporation High resistivity silicon carbide substrates for high power microwave devices
KR100553650B1 (ko) * 1997-06-23 2006-02-24 제임스 알버트 주니어 쿠퍼 폭이 넓은 밴드갭 반도체 내의 전력 소자
US6396080B2 (en) 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
AU2002246934A1 (en) * 2001-01-03 2002-07-16 Mississippi State University Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
US6507046B2 (en) * 2001-05-11 2003-01-14 Cree, Inc. High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
JP4733882B2 (ja) * 2001-09-28 2011-07-27 新日本製鐵株式会社 炭化珪素単結晶及びその製造方法並びに炭化珪素単結晶育成用炭化珪素結晶原料
SE520968C2 (sv) * 2001-10-29 2003-09-16 Okmetic Oyj Högresistiv monokristallin kiselkarbid och metod för dess framställning
JP4118045B2 (ja) * 2001-12-07 2008-07-16 富士通株式会社 半導体装置
SE525574C2 (sv) * 2002-08-30 2005-03-15 Okmetic Oyj Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter
US7275357B2 (en) * 2004-03-30 2007-10-02 Cnh America Llc Cotton module program control using yield monitor signal
JP5068423B2 (ja) 2004-10-13 2012-11-07 新日本製鐵株式会社 炭化珪素単結晶インゴット、炭化珪素単結晶ウェハ及びその製造方法
JP4470690B2 (ja) * 2004-10-29 2010-06-02 住友電気工業株式会社 炭化珪素単結晶、炭化珪素基板および炭化珪素単結晶の製造方法
WO2006070480A1 (ja) 2004-12-27 2006-07-06 Nippon Steel Corporation 炭化珪素単結晶、炭化珪素単結晶ウェハ及びその製造方法
EP1864338A4 (en) * 2005-02-04 2010-01-20 Seoul Opto Device Co Ltd LIGHT-EMITTING COMPONENT WITH SEVERAL LIGHT-EMITTING CELLS AND MANUFACTURING METHOD THEREFOR
US7276117B2 (en) * 2005-02-09 2007-10-02 Cree Dulles, Inc. Method of forming semi-insulating silicon carbide single crystal
US7476594B2 (en) * 2005-03-30 2009-01-13 Cree, Inc. Methods of fabricating silicon nitride regions in silicon carbide and resulting structures
US8698184B2 (en) 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
DE102008063129B4 (de) 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat
DE102008063124B4 (de) * 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat
US8377806B2 (en) 2010-04-28 2013-02-19 Cree, Inc. Method for controlled growth of silicon carbide and structures produced by same
KR101661053B1 (ko) 2012-05-24 2016-09-28 투-식스 인코포레이티드 Nu형과 pi형의 바나듐 보상된 si sic 단결정 및 그 결정 성장 공정
JP6419414B2 (ja) * 2013-03-22 2018-11-07 株式会社東芝 ＳｉＣエピタキシャルウェハおよび半導体装置
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US9245944B2 (en) 2013-07-02 2016-01-26 Infineon Technologies Ag Silicon carbide device and a method for manufacturing a silicon carbide device
JP6341056B2 (ja) * 2014-10-24 2018-06-13 日亜化学工業株式会社 サブマウント及びその製造方法並びに半導体レーザ装置及びその製造方法
US9806182B2 (en) * 2015-09-08 2017-10-31 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using elemental diboride diffusion barrier regions
US10793972B1 (en) 2017-07-11 2020-10-06 Ii-Vi Delaware, Inc. High quality silicon carbide crystals and method of making the same
WO2020255343A1 (ja) * 2019-06-20 2020-12-24 三菱電機株式会社 炭化ケイ素単結晶、半導体素子
US20210269937A1 (en) * 2020-03-02 2021-09-02 Ii-Vi Delaware, Inc. Silicon carbide crystals and methods for producing same
US20220025548A1 (en) * 2020-07-27 2022-01-27 Globalwafers Co., Ltd. Silicon carbide ingot and method of fabricating the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US344071A (en) * 1886-06-22 Robert w
US3344071A (en) * 1963-09-25 1967-09-26 Texas Instruments Inc High resistivity chromium doped gallium arsenide and process of making same
CH510328A (de) * 1969-10-01 1971-07-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden
JPS58191419A (ja) * 1982-05-04 1983-11-08 Nippon Telegr & Teleph Corp <Ntt> 半絶縁性ガリウムヒ素基板
FR2596777B1 (fr) * 1986-04-08 1994-01-21 Etat Francais Cnet Procede de preparation de semi-isolants 3-5 mono-cristallins par dopage et application des semi-isolants ainsi obtenus
US5087576A (en) * 1987-10-26 1992-02-11 North Carolina State University Implantation and electrical activation of dopants into monocrystalline silicon carbide
US5200805A (en) * 1987-12-28 1993-04-06 Hughes Aircraft Company Silicon carbide:metal carbide alloy semiconductor and method of making the same
US5135885A (en) * 1989-03-27 1992-08-04 Sharp Corporation Method of manufacturing silicon carbide fets
JPH0383332A (ja) * 1989-08-28 1991-04-09 Sharp Corp 炭化珪素半導体装置の製造方法
JP3146694B2 (ja) * 1992-11-12 2001-03-19 富士電機株式会社 炭化けい素ｍｏｓｆｅｔおよび炭化けい素ｍｏｓｆｅｔの製造方法

Also Published As

Publication number Publication date
JPH09500861A (ja) 1997-01-28
US5856231A (en) 1999-01-05
DE4325804A1 (de) 1995-02-02
DE59407776D1 (de) 1999-03-18
WO1995004171A1 (de) 1995-02-09
DE4325804C3 (de) 2001-08-09
EP0711363A1 (de) 1996-05-15
JP3307647B2 (ja) 2002-07-24
ATE176552T1 (de) 1999-02-15
EP0711363B1 (de) 1999-02-03
DE4325804C2 (de) 1997-07-24

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