ES2119208T3 - Disposicion de pixels que tiene elementos de pixel de formacion de imagenes integrados con elementos de circuito periferico. - Google Patents
Disposicion de pixels que tiene elementos de pixel de formacion de imagenes integrados con elementos de circuito periferico.Info
- Publication number
- ES2119208T3 ES2119208T3 ES94919213T ES94919213T ES2119208T3 ES 2119208 T3 ES2119208 T3 ES 2119208T3 ES 94919213 T ES94919213 T ES 94919213T ES 94919213 T ES94919213 T ES 94919213T ES 2119208 T3 ES2119208 T3 ES 2119208T3
- Authority
- ES
- Spain
- Prior art keywords
- pixel
- pixels
- elements
- pixel element
- configurable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 230000002093 peripheral effect Effects 0.000 title 1
- 239000002131 composite material Substances 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/767—Horizontal readout lines, multiplexers or registers
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Abstract
EN UN SISTEMA DE PIXELS QUE TIENE UN SISTEMA DE ELEMENTOS DE PIXELS, UNA PLURALIDAD DE LINEAS SELECCIONADAS DE FILAS, UNA PLURALIDAD DE LINEAS SELECCIONADAS DE COLUMNAS Y UNA PLURALIDAD DE LINEAS DE SEÑALES, SE PRESENTA UN ELEMENTO DE PIXEL PARA MINIMIZAR EL ESPACIO MUERTO DE UNA MATRIZ CAPTADORA DE IMAGENES GENERAL QUE INCLUYE MUCHOS SISTEMAS DE PIXELS. EL ELEMENTO DE PIXEL INCLUYE UN DISPOSITIVO FOTOTRANSDUCTOR PARA DETECTAR LA LUZ, TRANSMITIR LUZ O EMITIR LUZ Y UN PAR DE TRANSISTORES DE CONMUTACION EN SERIE ACOPLADOS ENTRE EL DISPOSITIVO FOTOTRANSDUCTOR Y UNA LINEA DE SEÑAL PREDETERMINADA. ADEMAS, EL ELEMENTO DE PIXEL INCLUYE AL MENOS UN TRANSISTOR CONFIGURABLE QUE ES INDEPENDIENTE DEL PAR DE TRANSISTORES DE CONMUTACION. ESTE TRANSISTOR CONFIGURABLE QUEDA INTERCONECTADO A OTROS TRANSISTORES CONFIGURABLES DESDE OTROS ELEMENTOS DE PIXELS POR TODO EL SISTEMA PARA PODER IMPLEMENTAR FUNCIONES DESEADAS, POR EJEMPLO UN CIRCUITO DE EXPLORACION, Y UN CIRCUITO DE AMPLIFICACION PARA ASI MINIMIZAR EL ESPACIO MUERTO DE CADA SISTEMA DE PIXELS Y, EN CONSECUENCIA, EL SISTEMA CAPTADOR DE IMAGENES GENERAL. EL ESPACIO MUERTO QUE HAY ALREDEDOR DE LA PERIFERIA DEL SISTEMA SE MINIMIZA PERMITIENDO QUE MULTIPLES SISTEMAS LINDEN CON LOS CUATRO LADOS PARA FORMAR UN SISTEMA DE FORMACION DE IMAGENES COMPUESTO RELATIVAMENTE GRANDE.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/068,340 US5336879A (en) | 1993-05-28 | 1993-05-28 | Pixel array having image forming pixel elements integral with peripheral circuit elements |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2119208T3 true ES2119208T3 (es) | 1998-10-01 |
Family
ID=22081937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES94919213T Expired - Lifetime ES2119208T3 (es) | 1993-05-28 | 1994-05-27 | Disposicion de pixels que tiene elementos de pixel de formacion de imagenes integrados con elementos de circuito periferico. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5336879A (es) |
EP (1) | EP0700582B1 (es) |
JP (1) | JP3552233B2 (es) |
DE (1) | DE69411914T2 (es) |
ES (1) | ES2119208T3 (es) |
WO (1) | WO1994028583A1 (es) |
Families Citing this family (52)
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US5436458A (en) * | 1993-12-06 | 1995-07-25 | Minnesota Mining And Manufacturing Company | Solid state radiation detection panel having tiled photosensitive detectors arranged to minimize edge effects between tiles |
US6456326B2 (en) | 1994-01-28 | 2002-09-24 | California Institute Of Technology | Single chip camera device having double sampling operation |
US5471515A (en) | 1994-01-28 | 1995-11-28 | California Institute Of Technology | Active pixel sensor with intra-pixel charge transfer |
USRE42918E1 (en) | 1994-01-28 | 2011-11-15 | California Institute Of Technology | Single substrate camera device with CMOS image sensor |
US5933190A (en) * | 1995-04-18 | 1999-08-03 | Imec Vzw | Pixel structure, image sensor using such pixel structure and corresponding peripheral circuitry |
US5644327A (en) * | 1995-06-07 | 1997-07-01 | David Sarnoff Research Center, Inc. | Tessellated electroluminescent display having a multilayer ceramic substrate |
US6236050B1 (en) * | 1996-02-02 | 2001-05-22 | TüMER TüMAY O. | Method and apparatus for radiation detection |
JP3713088B2 (ja) * | 1996-02-19 | 2005-11-02 | ローム株式会社 | 表示装置 |
US6232607B1 (en) * | 1996-05-08 | 2001-05-15 | Ifire Technology Inc. | High resolution flat panel for radiation imaging |
US5844663A (en) | 1996-09-13 | 1998-12-01 | Electronic Systems Engineering Co. | Method and apparatus for sequential exposure printing of ultra high resolution digital images using multiple multiple sub-image generation and a programmable moving-matrix light valve |
US5973311A (en) * | 1997-02-12 | 1999-10-26 | Imation Corp | Pixel array with high and low resolution mode |
JPH10248034A (ja) * | 1997-03-03 | 1998-09-14 | Nissan Motor Co Ltd | イメージセンサ |
GB2332562B (en) * | 1997-12-18 | 2000-01-12 | Simage Oy | Hybrid semiconductor imaging device |
US6897855B1 (en) * | 1998-02-17 | 2005-05-24 | Sarnoff Corporation | Tiled electronic display structure |
JP4058789B2 (ja) * | 1998-02-24 | 2008-03-12 | ソニー株式会社 | 固体撮像装置及びその駆動方法、並びにカメラ |
JP3629939B2 (ja) * | 1998-03-18 | 2005-03-16 | セイコーエプソン株式会社 | トランジスタ回路、表示パネル及び電子機器 |
US6498592B1 (en) | 1999-02-16 | 2002-12-24 | Sarnoff Corp. | Display tile structure using organic light emitting materials |
US7333156B2 (en) * | 1999-08-26 | 2008-02-19 | Canadian Space Agency | Sequential colour visual telepresence system |
DE10004891C2 (de) * | 2000-02-04 | 2002-10-31 | Astrium Gmbh | Fokalfläche und Detektor für optoelektronische Bildaufnahmesysteme, Herstellungsverfahren und optoelektronisches Bildaufnahmesystem |
TW521303B (en) * | 2000-02-28 | 2003-02-21 | Semiconductor Energy Lab | Electronic device |
US6795367B1 (en) * | 2000-05-16 | 2004-09-21 | Micron Technology, Inc. | Layout technique for address signal lines in decoders including stitched blocks |
US6809769B1 (en) | 2000-06-22 | 2004-10-26 | Pixim, Inc. | Designs of digital pixel sensors |
US6717151B2 (en) * | 2000-07-10 | 2004-04-06 | Canon Kabushiki Kaisha | Image pickup apparatus |
JP2002112117A (ja) * | 2000-09-27 | 2002-04-12 | Sakai Yasue | 固体撮像装置およびシステム、相関二重サンプリング回路 |
US7102600B2 (en) * | 2001-08-02 | 2006-09-05 | Seiko Epson Corporation | System and method for manufacturing a electro-optical device |
JP4209606B2 (ja) * | 2001-08-17 | 2009-01-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
GB0120110D0 (en) | 2001-08-17 | 2001-10-10 | Koninkl Philips Electronics Nv | Active matrix liquid crystal display |
JP4681774B2 (ja) * | 2001-08-30 | 2011-05-11 | キヤノン株式会社 | 撮像素子、その撮像素子を用いた撮像装置、及びその撮像装置を用いた撮像システム |
TWI282126B (en) * | 2001-08-30 | 2007-06-01 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
US7112517B2 (en) | 2001-09-10 | 2006-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Laser treatment device, laser treatment method, and semiconductor device fabrication method |
US7317205B2 (en) * | 2001-09-10 | 2008-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing a semiconductor device |
US7138696B2 (en) * | 2001-10-19 | 2006-11-21 | Canon Kabushiki Kaisha | Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system |
US7205526B2 (en) * | 2003-12-22 | 2007-04-17 | Micron Technology, Inc. | Methods of fabricating layered lens structures |
CN1654977A (zh) * | 2004-02-10 | 2005-08-17 | 西门子公司 | 用于x射线计算机层析摄影仪中的探测器模块和探测器 |
US7634061B1 (en) * | 2004-03-26 | 2009-12-15 | Nova R & D, Inc. | High resolution imaging system |
DE102005045895B3 (de) * | 2005-09-26 | 2007-06-14 | Siemens Ag | CMOS Röntgenflachdetektor |
US8053853B2 (en) * | 2006-05-03 | 2011-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Color filter-embedded MSM image sensor |
US7517783B2 (en) * | 2007-02-13 | 2009-04-14 | Micron Technology, Inc. | Molybdenum-doped indium oxide structures and methods |
US8054371B2 (en) * | 2007-02-19 | 2011-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Color filter for image sensor |
US7615754B2 (en) * | 2007-03-08 | 2009-11-10 | Fairchild Imaging, Inc. | Compact CMOS-based x-ray detector adapted for dental applications |
US7916836B2 (en) * | 2007-09-26 | 2011-03-29 | General Electric Company | Method and apparatus for flexibly binning energy discriminating data |
CN101904017A (zh) * | 2008-02-26 | 2010-12-01 | 硅绝缘体技术有限公司 | 制造半导体衬底的方法 |
EP2202795A1 (en) * | 2008-12-24 | 2010-06-30 | S.O.I. TEC Silicon | Method for fabricating a semiconductor substrate and semiconductor substrate |
CN102109698A (zh) * | 2009-12-23 | 2011-06-29 | 鸿富锦精密工业(深圳)有限公司 | 相机模组、液晶显示器及该相机模组的封装方法 |
US9357972B2 (en) | 2012-07-17 | 2016-06-07 | Cyber Medical Imaging, Inc. | Intraoral radiographic sensors with cables having increased user comfort and methods of using the same |
JP5424371B1 (ja) | 2013-05-08 | 2014-02-26 | 誠 雫石 | 固体撮像素子及び撮像装置 |
JP6188433B2 (ja) | 2013-06-07 | 2017-08-30 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US9571765B2 (en) | 2015-06-25 | 2017-02-14 | General Electric Company | Universal four-side buttable digital CMOS imager |
US10283557B2 (en) | 2015-12-31 | 2019-05-07 | General Electric Company | Radiation detector assembly |
US10686003B2 (en) * | 2015-12-31 | 2020-06-16 | General Electric Company | Radiation detector assembly |
JP6255527B1 (ja) * | 2017-08-01 | 2017-12-27 | 浜松ホトニクス株式会社 | 固体撮像装置 |
GB2574619B (en) * | 2018-06-12 | 2022-10-12 | Res & Innovation Uk | Image sensor |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5738073A (en) | 1980-08-20 | 1982-03-02 | Hitachi Ltd | Solid-state image sensor |
US4529884A (en) * | 1982-09-22 | 1985-07-16 | Wolicki Eligius A | Spectral dosimeter |
US4905265A (en) * | 1985-12-11 | 1990-02-27 | General Imaging Corporation | X-ray imaging system and solid state detector therefor |
US5220170A (en) | 1985-12-11 | 1993-06-15 | General Imaging Corporation | X-ray imaging system and solid state detector therefor |
JPH07117380B2 (ja) | 1986-07-18 | 1995-12-18 | アンリツ株式会社 | 受光変換装置 |
US4994877A (en) * | 1987-02-12 | 1991-02-19 | Ricoh Company, Ltd. | Photoelectric conversion semiconductor device with noise limiting circuit |
JP2594992B2 (ja) * | 1987-12-04 | 1997-03-26 | 株式会社日立製作所 | 固体撮像装置 |
NL8802252A (nl) * | 1988-05-31 | 1989-12-18 | Imec Inter Uni Micro Electr | Detectie-inrichting voor straling. |
JPH0785568B2 (ja) * | 1989-04-05 | 1995-09-13 | 富士ゼロックス株式会社 | 密着型イメージセンサ装置 |
US5196721A (en) * | 1989-10-03 | 1993-03-23 | Fuji Xerox Co., Ltd. | Image reading device |
US5115293A (en) * | 1989-12-11 | 1992-05-19 | Fuji Photo Film Co., Ltd. | Solid-state imaging device |
DE4002431A1 (de) * | 1990-01-27 | 1991-08-01 | Philips Patentverwaltung | Sensormatrix |
US5182625A (en) * | 1990-04-26 | 1993-01-26 | Fuji Xerox Co., Ltd. | Image sensor and method of manufacturing the same |
US5105087A (en) * | 1990-11-28 | 1992-04-14 | Eastman Kodak Company | Large solid state sensor assembly formed from smaller sensors |
-
1993
- 1993-05-28 US US08/068,340 patent/US5336879A/en not_active Expired - Lifetime
-
1994
- 1994-05-27 ES ES94919213T patent/ES2119208T3/es not_active Expired - Lifetime
- 1994-05-27 JP JP50088295A patent/JP3552233B2/ja not_active Expired - Lifetime
- 1994-05-27 EP EP94919213A patent/EP0700582B1/en not_active Expired - Lifetime
- 1994-05-27 WO PCT/US1994/005801 patent/WO1994028583A1/en active IP Right Grant
- 1994-05-27 DE DE69411914T patent/DE69411914T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3552233B2 (ja) | 2004-08-11 |
DE69411914D1 (de) | 1998-08-27 |
JPH08510883A (ja) | 1996-11-12 |
DE69411914T2 (de) | 1999-03-04 |
EP0700582B1 (en) | 1998-07-22 |
US5336879A (en) | 1994-08-09 |
WO1994028583A1 (en) | 1994-12-08 |
EP0700582A1 (en) | 1996-03-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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