ES2116426T3 - Formacion de capas semiconductoras dopadas con tierras raras sobresaturadas por cvd. - Google Patents

Formacion de capas semiconductoras dopadas con tierras raras sobresaturadas por cvd.

Info

Publication number
ES2116426T3
ES2116426T3 ES93480110T ES93480110T ES2116426T3 ES 2116426 T3 ES2116426 T3 ES 2116426T3 ES 93480110 T ES93480110 T ES 93480110T ES 93480110 T ES93480110 T ES 93480110T ES 2116426 T3 ES2116426 T3 ES 2116426T3
Authority
ES
Spain
Prior art keywords
reactor
rare earth
erbio
doped
dvq
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93480110T
Other languages
English (en)
Inventor
David Bruce Beach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of ES2116426T3 publication Critical patent/ES2116426T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H10P32/12—
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3411—
    • H10P14/3446—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

SE DESCUBRE UN PROCESO DVQ PARA PRODUCIR UNA CAPA SEMICONDUCTORA EPITAXIAL, DOPADA CON TIERRA RARA, SOBRE UN SUSTRATO. EL EQUIPO ES UN REACTOR DE DEPOSICION DE VAPOR QUIMICO EN VACIO ULTRA ALTO (DVQVUA) DE 7,6 CM DE DIAMETRO, EN DONDE EL BOMBEO Y LA CARGA DE LA PASTILLA SON HECHOS EN EL MISMO EXTREMO DEL REACTOR. ESTA MODIFICACION PERMITE LA INSTALACION DE UN DEPOSITO (1) DE PRECURSOR CALENTADO SOBRE EL EXTREMO OPUESTO DEL REACTOR. EL DEPOSITO ESTA CONECTADO AL FLANCO DEL EXTREMO DEL REACTOR USANDO UN TUBO (12) DE ACERO INOXIDABLE DE DIAMETRO CORTO. EL REACTOR ES CALENTADO POR CALENTADORES (4) RESISTIVOS EXTERNOS. EL REACTOR ES BOMBEADO ANTES Y DURANTE LA DEPOSICION POR UNA BOMBA (8) TURBOMOLECULAR DE 150 L/SEG RESPALDADA POR UNA BOMBA (9) DE ACEITE DE DOS ETAPAS. LA CAMARA DE INMOVILIZACION DE CARGA ES TAMBIEN BOMBEADA POR UNA BOMBA (10) TURBOMOLECULAR PARA PREVENIR LA CONTAMINACION DE LA BOMBA DE ACEITE. EL PROCESO UTILIZA SILANO O GERMANIO Y UN COMPUESTO DE TIERRA RARA EN LA FASE DE GAS.POR ESTE METODO DE FASE UNICA SE PRODUCEN CAPAS SEMICONDUCTORAS DOPADAS CON TIERRA RARA, SUPERSATURADAS CON LA TIERRA RARA. LA TIERRA RARA PREFERIDA ES ERBIO Y LOS PRECURSORES PREFERIDOS PARA DEPOSITAR ERBIO POR DVQ SON ERBIO HEXAFLUOROACETILOACETONATO, ACETILOACETONATO, TETRAMETILOEPTANODIONATO Y FLUOROOCTANODIONATO. EL PROCESO PUEDE SER USADO PARA PRODUCIR DISPOSITIVOS OPTOELECTRONICOS QUE COMPRENDEN UN SUSTRATO DE SILICIO Y UNA PELICULA DE SILICIO EPITAXIAL DOPADA CON ERBIO.
ES93480110T 1992-08-31 1993-07-30 Formacion de capas semiconductoras dopadas con tierras raras sobresaturadas por cvd. Expired - Lifetime ES2116426T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/940,416 US5322813A (en) 1992-08-31 1992-08-31 Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition

Publications (1)

Publication Number Publication Date
ES2116426T3 true ES2116426T3 (es) 1998-07-16

Family

ID=25474795

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93480110T Expired - Lifetime ES2116426T3 (es) 1992-08-31 1993-07-30 Formacion de capas semiconductoras dopadas con tierras raras sobresaturadas por cvd.

Country Status (11)

Country Link
US (3) US5322813A (es)
EP (1) EP0586321B1 (es)
JP (1) JPH0785467B2 (es)
KR (1) KR970008339B1 (es)
CN (3) CN1054234C (es)
AT (1) ATE166491T1 (es)
CA (1) CA2095449C (es)
DE (1) DE69318653T2 (es)
ES (1) ES2116426T3 (es)
MX (1) MX9305267A (es)
TW (1) TW229325B (es)

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KR100377716B1 (ko) * 1998-02-25 2003-03-26 인터내셔널 비지네스 머신즈 코포레이션 광학적 방사를 위해 희토류 원소로 도핑된 실리콘 구조체 및 방사방법
EP1131611A4 (en) 1998-06-29 2003-01-02 Univ State San Diego METHOD AND DEVICE FOR DETERMINING HYDROCARBON COMPOUNDS AND THEIR APPLICATIONS THEREOF
US6140669A (en) * 1999-02-20 2000-10-31 Ohio University Gallium nitride doped with rare earth ions and method and structure for achieving visible light emission
US6143072A (en) * 1999-04-06 2000-11-07 Ut-Battelle, Llc Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate
US6255669B1 (en) * 1999-04-23 2001-07-03 The University Of Cincinnati Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element
KR100510996B1 (ko) * 1999-12-30 2005-08-31 주식회사 하이닉스반도체 선택적 에피텍셜 성장 공정의 최적화 방법
US6519543B1 (en) * 2000-05-09 2003-02-11 Agere Systems Inc. Calibration method for quantitative elemental analysis
US6734453B2 (en) 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
KR100384892B1 (ko) * 2000-12-01 2003-05-22 한국전자통신연구원 에르븀이 도핑된 실리콘나노점의 형성 방법
US6853447B2 (en) * 2001-02-12 2005-02-08 Analytical Spectral Devices, Inc. System and method for the collection of spectral image data
US6894772B2 (en) * 2001-02-12 2005-05-17 Analytical Spectral Devices System and method for grouping reflectance data
JP2002334868A (ja) * 2001-05-10 2002-11-22 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US6771369B2 (en) * 2002-03-12 2004-08-03 Analytical Spectral Devices, Inc. System and method for pharmacy validation and inspection
US7081664B2 (en) * 2003-01-22 2006-07-25 Group Iv Semiconductor Inc. Doped semiconductor powder and preparation thereof
US7440180B2 (en) * 2004-02-13 2008-10-21 Tang Yin S Integration of rare-earth doped amplifiers into semiconductor structures and uses of same
US7163878B2 (en) * 2004-11-12 2007-01-16 Texas Instruments Incorporated Ultra-shallow arsenic junction formation in silicon germanium
CN100385693C (zh) * 2005-08-18 2008-04-30 中国科学院半导体研究所 用等离子体处理提高硅基晶体薄膜发光的方法
DE102006031300A1 (de) * 2006-06-29 2008-01-03 Schmid Technology Systems Gmbh Verfahren zur Dotierung von Siliziummaterial für Solarzellen, entsprechend dotiertes Siliziummaterial und Solarzelle
US20080138955A1 (en) * 2006-12-12 2008-06-12 Zhiyuan Ye Formation of epitaxial layer containing silicon
KR101711356B1 (ko) * 2008-06-05 2017-02-28 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 란탄족 함유 전구체의 제조 및 란탄족 함유 필름의 증착 방법
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US9481917B2 (en) * 2012-12-20 2016-11-01 United Technologies Corporation Gaseous based desulfurization of alloys
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Also Published As

Publication number Publication date
US5534079A (en) 1996-07-09
DE69318653D1 (de) 1998-06-25
CN1114225C (zh) 2003-07-09
US5322813A (en) 1994-06-21
EP0586321B1 (en) 1998-05-20
EP0586321A2 (en) 1994-03-09
EP0586321A3 (en) 1996-03-27
MX9305267A (es) 1994-02-28
CN1054234C (zh) 2000-07-05
CA2095449C (en) 1997-09-16
ATE166491T1 (de) 1998-06-15
CN1255735A (zh) 2000-06-07
KR940004714A (ko) 1994-03-15
CN1255736A (zh) 2000-06-07
DE69318653T2 (de) 1999-02-04
JPH06177062A (ja) 1994-06-24
CN1085353A (zh) 1994-04-13
JPH0785467B2 (ja) 1995-09-13
CA2095449A1 (en) 1994-03-01
TW229325B (es) 1994-09-01
KR970008339B1 (ko) 1997-05-23
CN1117389C (zh) 2003-08-06
US5646425A (en) 1997-07-08

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