ATE166491T1 - Herstellung von dotierten, mit seltener erde übersättigten halbleiterschichten durch cvd - Google Patents

Herstellung von dotierten, mit seltener erde übersättigten halbleiterschichten durch cvd

Info

Publication number
ATE166491T1
ATE166491T1 AT93480110T AT93480110T ATE166491T1 AT E166491 T1 ATE166491 T1 AT E166491T1 AT 93480110 T AT93480110 T AT 93480110T AT 93480110 T AT93480110 T AT 93480110T AT E166491 T1 ATE166491 T1 AT E166491T1
Authority
AT
Austria
Prior art keywords
rare earth
reactor
erbium
cvd
doped
Prior art date
Application number
AT93480110T
Other languages
English (en)
Inventor
David Bruce Beach
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE166491T1 publication Critical patent/ATE166491T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H10P32/12—
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3411—
    • H10P14/3446—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT93480110T 1992-08-31 1993-07-30 Herstellung von dotierten, mit seltener erde übersättigten halbleiterschichten durch cvd ATE166491T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/940,416 US5322813A (en) 1992-08-31 1992-08-31 Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition

Publications (1)

Publication Number Publication Date
ATE166491T1 true ATE166491T1 (de) 1998-06-15

Family

ID=25474795

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93480110T ATE166491T1 (de) 1992-08-31 1993-07-30 Herstellung von dotierten, mit seltener erde übersättigten halbleiterschichten durch cvd

Country Status (11)

Country Link
US (3) US5322813A (de)
EP (1) EP0586321B1 (de)
JP (1) JPH0785467B2 (de)
KR (1) KR970008339B1 (de)
CN (3) CN1054234C (de)
AT (1) ATE166491T1 (de)
CA (1) CA2095449C (de)
DE (1) DE69318653T2 (de)
ES (1) ES2116426T3 (de)
MX (1) MX9305267A (de)
TW (1) TW229325B (de)

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WO2000000811A2 (en) * 1998-06-29 2000-01-06 San Diego State University Foundation Method and apparatus for determination of carbon-halogen compounds and applications thereof
US6140669A (en) * 1999-02-20 2000-10-31 Ohio University Gallium nitride doped with rare earth ions and method and structure for achieving visible light emission
US6143072A (en) * 1999-04-06 2000-11-07 Ut-Battelle, Llc Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate
US6255669B1 (en) * 1999-04-23 2001-07-03 The University Of Cincinnati Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element
KR100510996B1 (ko) * 1999-12-30 2005-08-31 주식회사 하이닉스반도체 선택적 에피텍셜 성장 공정의 최적화 방법
US6519543B1 (en) * 2000-05-09 2003-02-11 Agere Systems Inc. Calibration method for quantitative elemental analysis
US6734453B2 (en) 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
KR100384892B1 (ko) * 2000-12-01 2003-05-22 한국전자통신연구원 에르븀이 도핑된 실리콘나노점의 형성 방법
US6853447B2 (en) * 2001-02-12 2005-02-08 Analytical Spectral Devices, Inc. System and method for the collection of spectral image data
US6894772B2 (en) * 2001-02-12 2005-05-17 Analytical Spectral Devices System and method for grouping reflectance data
JP2002334868A (ja) * 2001-05-10 2002-11-22 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US6771369B2 (en) * 2002-03-12 2004-08-03 Analytical Spectral Devices, Inc. System and method for pharmacy validation and inspection
WO2004066345A2 (en) * 2003-01-22 2004-08-05 Group Iv Semiconductor Inc. Doped semiconductor nanocrystal layers and preparation thereof
US7440180B2 (en) * 2004-02-13 2008-10-21 Tang Yin S Integration of rare-earth doped amplifiers into semiconductor structures and uses of same
US7163878B2 (en) * 2004-11-12 2007-01-16 Texas Instruments Incorporated Ultra-shallow arsenic junction formation in silicon germanium
CN100385693C (zh) * 2005-08-18 2008-04-30 中国科学院半导体研究所 用等离子体处理提高硅基晶体薄膜发光的方法
DE102006031300A1 (de) * 2006-06-29 2008-01-03 Schmid Technology Systems Gmbh Verfahren zur Dotierung von Siliziummaterial für Solarzellen, entsprechend dotiertes Siliziummaterial und Solarzelle
US20080138955A1 (en) * 2006-12-12 2008-06-12 Zhiyuan Ye Formation of epitaxial layer containing silicon
JP5666433B2 (ja) * 2008-06-05 2015-02-12 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ランタニド含有前駆体の調製およびランタニド含有膜の堆積
US8269253B2 (en) * 2009-06-08 2012-09-18 International Rectifier Corporation Rare earth enhanced high electron mobility transistor and method for fabricating same
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US9481917B2 (en) * 2012-12-20 2016-11-01 United Technologies Corporation Gaseous based desulfurization of alloys
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US9850573B1 (en) 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US10364259B2 (en) * 2016-12-30 2019-07-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same
US10975469B2 (en) 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
GB201812765D0 (en) * 2018-08-06 2018-09-19 Univ London Queen Mary Substrate layer
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Also Published As

Publication number Publication date
MX9305267A (es) 1994-02-28
CN1085353A (zh) 1994-04-13
CN1255736A (zh) 2000-06-07
JPH0785467B2 (ja) 1995-09-13
CN1054234C (zh) 2000-07-05
US5534079A (en) 1996-07-09
KR970008339B1 (ko) 1997-05-23
EP0586321A2 (de) 1994-03-09
CN1255735A (zh) 2000-06-07
EP0586321B1 (de) 1998-05-20
ES2116426T3 (es) 1998-07-16
DE69318653D1 (de) 1998-06-25
JPH06177062A (ja) 1994-06-24
US5322813A (en) 1994-06-21
CN1117389C (zh) 2003-08-06
EP0586321A3 (en) 1996-03-27
CA2095449C (en) 1997-09-16
KR940004714A (ko) 1994-03-15
CN1114225C (zh) 2003-07-09
US5646425A (en) 1997-07-08
CA2095449A1 (en) 1994-03-01
TW229325B (de) 1994-09-01
DE69318653T2 (de) 1999-02-04

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