ES2107036T3 - Dispositivo de deteccion selectiva de gases. - Google Patents

Dispositivo de deteccion selectiva de gases.

Info

Publication number
ES2107036T3
ES2107036T3 ES93913090T ES93913090T ES2107036T3 ES 2107036 T3 ES2107036 T3 ES 2107036T3 ES 93913090 T ES93913090 T ES 93913090T ES 93913090 T ES93913090 T ES 93913090T ES 2107036 T3 ES2107036 T3 ES 2107036T3
Authority
ES
Spain
Prior art keywords
voltage
face
pct
gas
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93913090T
Other languages
English (en)
Inventor
Muriel Loesch
Francis Menil
Claude Lucat
Pascale Dutronc
Veronique Marteau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Engie SA
Original Assignee
Gaz de France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gaz de France SA filed Critical Gaz de France SA
Application granted granted Critical
Publication of ES2107036T3 publication Critical patent/ES2107036T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/122—Circuits particularly adapted therefor, e.g. linearising circuits
    • G01N27/123—Circuits particularly adapted therefor, e.g. linearising circuits for controlling the temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

LA PRESENTE INVENCION SE REFIERE A UN DISPOSITIVO DE DETECCION SELECTIVA DE GAS, QUE PERMITE LA DETECCION DE UN PRIMER GAS RESPECTO A UN SEGUNDO GAS, Y QUE COMPRENDE UN CAPTADOR EN ESTADO SOLIDO, PROVISTO DE UN SUBSTRATO AISLANTE (1) QUE TIENE UNA PRIMERA Y UNA SEGUNDA CARAS; DE UN ELEMENTO TERMICO DEPOSITADO SOBRE LA PRIMERA CARA DEL CITADO SUBSTRATO, DE ELECTRODOS METALICOS (3), DEPOSITADOS SOBRE LA SEGUNDA CARA DEL CITADO SUBSTRATO, Y DE UNA CAPA SEMICONDUCTORA (4), FORMADA SOBRE LOS CITADOS ELECTRODOS Y SOBRE LA SEGUNDA CARA DEL CITADO SUBSTRATO. LA DETECCION SE REALIZA MEDIANTE LA DETERMINACION SIMULTANEA DE UNA TENSION U QUE REPRESENTA LA RESISTENCIA DEL ELEMENTO SEMICONDUCTOR (4) DEL CAPTADOR EN ESTADO SOLIDO (10) Y DE LA DIFERENCIA DE TENSION S ENTRE UNA TENSION REPRESENTATIVA DE LA TEMPERATURA DEL ELEMENTO DE CALDEO (2) DEL CITADO CAPTADOR EN ESTADO SOLIDO Y UNA TENSION REPRESENTATIVA DE LA TEMPERATURA DE UN ELEMENTO TERMICO (12) DE UN CAPTADOR DE REFERENCIA (20) DEL CITADO CAPTADOR EN ESTADO SOLIDO Y UNA TENSION REPRESENTATIVA DE LA TEMPERATURA DE UN ELEMENTO TERMICO (12) DE UN CAPTADOR DE REFERENCIA (20), ESTA TENSION U Y ESTA DIFERENCIA DE TENSION S COMPARANDOSE CADA UNA CON UNA TENSION DE UMBRAL DIFERENTE Y PREDETERMINADA, CON EL FIN DE PERMITIR LA DETECCION SELECTIVA DE GAS.
ES93913090T 1992-06-04 1993-06-04 Dispositivo de deteccion selectiva de gases. Expired - Lifetime ES2107036T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9206791A FR2692047B1 (fr) 1992-06-04 1992-06-04 Capteur de detection selective de gaz et dispositif pour sa mise en óoeuvre.

Publications (1)

Publication Number Publication Date
ES2107036T3 true ES2107036T3 (es) 1997-11-16

Family

ID=9430444

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93913090T Expired - Lifetime ES2107036T3 (es) 1992-06-04 1993-06-04 Dispositivo de deteccion selectiva de gases.

Country Status (9)

Country Link
US (1) US5573728A (es)
EP (1) EP0597078B1 (es)
JP (1) JPH07500916A (es)
AT (1) ATE157450T1 (es)
CA (1) CA2114633A1 (es)
DE (1) DE69313406D1 (es)
ES (1) ES2107036T3 (es)
FR (1) FR2692047B1 (es)
WO (1) WO1993024827A1 (es)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5977687A (en) * 1996-07-12 1999-11-02 Advanced Technology Materials, Inc. Piezoelectric end point sensor for detection of breakthrough of fluid, and fluid processing apparatus comprising same
US5827947A (en) * 1997-01-17 1998-10-27 Advanced Technology Materials, Inc. Piezoelectric sensor for hydride gases, and fluid monitoring apparatus comprising same
US6244121B1 (en) * 1998-03-06 2001-06-12 Applied Materials, Inc. Sensor device for non-intrusive diagnosis of a semiconductor processing system
DE19818474A1 (de) * 1998-04-24 1999-11-25 Siemens Ag Gassensor und Verwendung
US6029500A (en) * 1998-05-19 2000-02-29 Advanced Technology Materials, Inc. Piezoelectric quartz crystal hydrogen sensor, and hydrogen sensing method utilizing same
US6079252A (en) * 1998-05-20 2000-06-27 Advanced Technology Materials, Inc. Leak detection device, and fluid vessel assembly comprising same
US6156578A (en) * 1998-06-01 2000-12-05 Advanced Technology Materials, Inc. Quartz crystal microbalance system for detecting concentration of a selected gas component in a multicomponent gas stream
ITMI981248A1 (it) * 1998-06-04 1999-12-04 Enitecnologie Spa Processo per la determinazione di mtbe nei terreni e nell'aria
US6095681A (en) * 1998-07-28 2000-08-01 The United States Of America As Represented By The Secretary Of Commerce Method for operating a sensor to differentiate between analytes in a sample
US6295861B1 (en) 1999-01-28 2001-10-02 Advanced Technology Materials, Inc. Quartz crystal microbalance sensors and semiconductor manufacturing process systems comprising same
US6166356A (en) * 1999-04-19 2000-12-26 Hewlett-Packard Temperature monitoring system
DE10066163B4 (de) * 1999-04-19 2004-12-16 Hewlett-Packard Co. (N.D.Ges.D.Staates Delaware), Palo Alto Temperaturüberwachungssystem
US7289230B2 (en) * 2002-02-06 2007-10-30 Cyberoptics Semiconductors, Inc. Wireless substrate-like sensor
US20050224902A1 (en) * 2002-02-06 2005-10-13 Ramsey Craig C Wireless substrate-like sensor
US20050233770A1 (en) * 2002-02-06 2005-10-20 Ramsey Craig C Wireless substrate-like sensor
GB2450261A (en) 2006-02-21 2008-12-17 Cyberoptics Semiconductor Inc Capacitive distance sensing in semiconductor processing tools
US7893697B2 (en) 2006-02-21 2011-02-22 Cyberoptics Semiconductor, Inc. Capacitive distance sensing in semiconductor processing tools
CN101517701B (zh) * 2006-09-29 2011-08-10 赛博光学半导体公司 衬底形的粒子传感器
US7778793B2 (en) * 2007-03-12 2010-08-17 Cyberoptics Semiconductor, Inc. Wireless sensor for semiconductor processing systems
EP2105733A1 (de) * 2008-03-26 2009-09-30 Micronas GmbH Verfahren zum Messen der Konzentration eines Gases
EP2762868B1 (en) * 2013-01-31 2017-03-15 Sensirion AG Diffusion based metal oxide gas sensor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2737385A1 (de) * 1977-08-19 1979-03-22 Licentia Gmbh Gasspuerelement zum nachweis von fetten und geruchsstoffen in duensten
US4443791A (en) * 1978-01-05 1984-04-17 Risgin Ojars Self-compensating gas detection apparatus
JPS5766347A (en) * 1980-10-09 1982-04-22 Hitachi Ltd Detector for mixture gas
JPS6014148A (ja) * 1983-07-05 1985-01-24 Nippon Soken Inc ガスセンサ
US4541988A (en) * 1983-12-13 1985-09-17 Bacharach Instrument Company Constant temperature catalytic gas detection instrument
JPH01109250A (ja) * 1987-10-22 1989-04-26 Toshiba Corp ガスセンサ
US4911892A (en) * 1987-02-24 1990-03-27 American Intell-Sensors Corporation Apparatus for simultaneous detection of target gases
JPH07104309B2 (ja) * 1987-03-20 1995-11-13 株式会社東芝 ガスセンサの製造方法
US4847783A (en) * 1987-05-27 1989-07-11 Richard Grace Gas sensing instrument
US5047214A (en) * 1989-03-08 1991-09-10 New Cosmos Electric Co., Ltd. Smell sensing element and smell sensing device
IT1241405B (it) * 1990-03-02 1994-01-14 Eniricerche Spa Sensori di gas per determinare idrocarburi gassosi realizzati con film sottili di ossido di stagno
IT1256759B (it) * 1992-12-23 1995-12-15 Eniricerche Spa Sensore di gas a base di ossido semiconduttore per determinare idrocarburi gassosi

Also Published As

Publication number Publication date
US5573728A (en) 1996-11-12
EP0597078A1 (fr) 1994-05-18
EP0597078B1 (fr) 1997-08-27
ATE157450T1 (de) 1997-09-15
FR2692047B1 (fr) 1995-08-04
FR2692047A1 (fr) 1993-12-10
CA2114633A1 (fr) 1993-12-09
JPH07500916A (ja) 1995-01-26
WO1993024827A1 (fr) 1993-12-09
DE69313406D1 (de) 1997-10-02

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