EP0430403B1
(en)
|
1989-11-30 |
1998-01-07 |
STMicroelectronics, Inc. |
Method for fabricating interlevel contacts
|
US5108951A
(en)
*
|
1990-11-05 |
1992-04-28 |
Sgs-Thomson Microelectronics, Inc. |
Method for forming a metal contact
|
US5472912A
(en)
*
|
1989-11-30 |
1995-12-05 |
Sgs-Thomson Microelectronics, Inc. |
Method of making an integrated circuit structure by using a non-conductive plug
|
US6242811B1
(en)
|
1989-11-30 |
2001-06-05 |
Stmicroelectronics, Inc. |
Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature
|
US5658828A
(en)
*
|
1989-11-30 |
1997-08-19 |
Sgs-Thomson Microelectronics, Inc. |
Method for forming an aluminum contact through an insulating layer
|
US6271137B1
(en)
|
1989-11-30 |
2001-08-07 |
Stmicroelectronics, Inc. |
Method of producing an aluminum stacked contact/via for multilayer
|
DE4028776C2
(de)
*
|
1990-07-03 |
1994-03-10 |
Samsung Electronics Co Ltd |
Verfahren zur Bildung einer metallischen Verdrahtungsschicht und Füllen einer Kontaktöffnung in einem Halbleiterbauelement
|
US6287963B1
(en)
*
|
1990-11-05 |
2001-09-11 |
Stmicroelectronics, Inc. |
Method for forming a metal contact
|
KR920010620A
(ko)
*
|
1990-11-30 |
1992-06-26 |
원본미기재 |
다층 상호접속선을 위한 알루미늄 적층 접점/통로 형성방법
|
JPH04363024A
(ja)
*
|
1990-11-30 |
1992-12-15 |
Toshiba Corp |
半導体装置の製造方法
|
JP2946978B2
(ja)
*
|
1991-11-29 |
1999-09-13 |
ソニー株式会社 |
配線形成方法
|
US6051490A
(en)
*
|
1991-11-29 |
2000-04-18 |
Sony Corporation |
Method of forming wirings
|
DE69300918T2
(de)
*
|
1992-01-21 |
1996-04-25 |
Sgs Thomson Microelectronics |
Verfahren zur Herstellung eines Aluminiumkontakts.
|
US6033534A
(en)
*
|
1992-05-20 |
2000-03-07 |
Siemens Aktiengesellschaft |
Method for producing an Al-containing layer with a planar surface on a substrate having hole structures with a high aspect ratio in the surface
|
DE69319993T2
(de)
*
|
1992-09-22 |
1998-12-10 |
Sgs-Thomson Microelectronics, Inc., Carrollton, Tex. |
Methode zur Herstellung eines Metallkontaktes
|
US5358616A
(en)
*
|
1993-02-17 |
1994-10-25 |
Ward Michael G |
Filling of vias and contacts employing an aluminum-germanium alloy
|
US5360524A
(en)
*
|
1993-04-13 |
1994-11-01 |
Rudi Hendel |
Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits
|
US5540821A
(en)
*
|
1993-07-16 |
1996-07-30 |
Applied Materials, Inc. |
Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing
|
US5639357A
(en)
*
|
1994-05-12 |
1997-06-17 |
Applied Materials |
Synchronous modulation bias sputter method and apparatus for complete planarization of metal films
|
EP0735577A3
(en)
*
|
1994-12-14 |
1997-04-02 |
Applied Materials Inc |
Deposit process and apparatus
|
US5766426A
(en)
*
|
1995-02-14 |
1998-06-16 |
Sputtered Films, Inc. |
Apparatus for, and method of, depositing a film on a substrate
|
US6238533B1
(en)
|
1995-08-07 |
2001-05-29 |
Applied Materials, Inc. |
Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
|
US5962923A
(en)
|
1995-08-07 |
1999-10-05 |
Applied Materials, Inc. |
Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
|
US5807467A
(en)
|
1996-01-22 |
1998-09-15 |
Micron Technology, Inc. |
In situ preclean in a PVD chamber with a biased substrate configuration
|
US5741406A
(en)
*
|
1996-04-02 |
1998-04-21 |
Northerwestern University |
Solid oxide fuel cells having dense yttria-stabilized zirconia electrolyte films and method of depositing electrolyte films
|
EP0799903A3
(en)
|
1996-04-05 |
1999-11-17 |
Applied Materials, Inc. |
Methods of sputtering a metal onto a substrate and semiconductor processing apparatus
|
US5997699A
(en)
*
|
1996-04-08 |
1999-12-07 |
Micron Technology Inc. |
Insitu faceting during deposition
|
US5827408A
(en)
*
|
1996-07-26 |
1998-10-27 |
Applied Materials, Inc |
Method and apparatus for improving the conformality of sputter deposited films
|
US6309971B1
(en)
|
1996-08-01 |
2001-10-30 |
Cypress Semiconductor Corporation |
Hot metallization process
|
KR100402941B1
(ko)
*
|
1996-08-19 |
2004-03-18 |
주식회사 하이닉스반도체 |
반도체 소자의 금속층 형성방법
|
GB9619461D0
(en)
*
|
1996-09-18 |
1996-10-30 |
Electrotech Ltd |
Method of processing a workpiece
|
US6156645A
(en)
*
|
1996-10-25 |
2000-12-05 |
Cypress Semiconductor Corporation |
Method of forming a metal layer on a substrate, including formation of wetting layer at a high temperature
|
US5873983A
(en)
*
|
1997-01-13 |
1999-02-23 |
Vanguard International Semiconductor Corporation |
Method for minimizing substrate to clamp sticking during thermal processing of thermally flowable layers
|
US6605197B1
(en)
*
|
1997-05-13 |
2003-08-12 |
Applied Materials, Inc. |
Method of sputtering copper to fill trenches and vias
|
US6176983B1
(en)
*
|
1997-09-03 |
2001-01-23 |
Vlsi Technology, Inc. |
Methods of forming a semiconductor device
|
FR2769923B1
(fr)
*
|
1997-10-17 |
2001-12-28 |
Cypress Semiconductor Corp |
Procede ameliore de metallisation a chaud
|
US6140228A
(en)
|
1997-11-13 |
2000-10-31 |
Cypress Semiconductor Corporation |
Low temperature metallization process
|
WO1999027579A1
(en)
|
1997-11-26 |
1999-06-03 |
Applied Materials, Inc. |
Damage-free sculptured coating deposition
|
US20050272254A1
(en)
*
|
1997-11-26 |
2005-12-08 |
Applied Materials, Inc. |
Method of depositing low resistivity barrier layers for copper interconnects
|
US7253109B2
(en)
*
|
1997-11-26 |
2007-08-07 |
Applied Materials, Inc. |
Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
|
US6169030B1
(en)
|
1998-01-14 |
2001-01-02 |
Applied Materials, Inc. |
Metallization process and method
|
US6177350B1
(en)
|
1998-04-14 |
2001-01-23 |
Applied Materials, Inc. |
Method for forming a multilayered aluminum-comprising structure on a substrate
|
US6140236A
(en)
*
|
1998-04-21 |
2000-10-31 |
Kabushiki Kaisha Toshiba |
High throughput A1-Cu thin film sputtering process on small contact via for manufacturable beol wiring
|
US6162332A
(en)
*
|
1998-05-07 |
2000-12-19 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method and apparatus for preventing arcing in sputter chamber
|
US6187667B1
(en)
|
1998-06-17 |
2001-02-13 |
Cypress Semiconductor Corp. |
Method of forming metal layer(s) and/or antireflective coating layer(s) on an integrated circuit
|
US6638856B1
(en)
|
1998-09-11 |
2003-10-28 |
Cypress Semiconductor Corporation |
Method of depositing metal onto a substrate
|
US6306265B1
(en)
*
|
1999-02-12 |
2001-10-23 |
Applied Materials, Inc. |
High-density plasma for ionized metal deposition capable of exciting a plasma wave
|
US6556949B1
(en)
*
|
1999-05-18 |
2003-04-29 |
Applied Materials, Inc. |
Semiconductor processing techniques
|
US6456894B1
(en)
|
1999-06-01 |
2002-09-24 |
Applied Materials, Inc. |
Semiconductor processing techniques
|
US6303395B1
(en)
|
1999-06-01 |
2001-10-16 |
Applied Materials, Inc. |
Semiconductor processing techniques
|
US6408220B1
(en)
|
1999-06-01 |
2002-06-18 |
Applied Materials, Inc. |
Semiconductor processing techniques
|
US7069101B1
(en)
|
1999-07-29 |
2006-06-27 |
Applied Materials, Inc. |
Computer integrated manufacturing techniques
|
US10047430B2
(en)
|
1999-10-08 |
2018-08-14 |
Applied Materials, Inc. |
Self-ionized and inductively-coupled plasma for sputtering and resputtering
|
US8696875B2
(en)
*
|
1999-10-08 |
2014-04-15 |
Applied Materials, Inc. |
Self-ionized and inductively-coupled plasma for sputtering and resputtering
|
US6640151B1
(en)
|
1999-12-22 |
2003-10-28 |
Applied Materials, Inc. |
Multi-tool control system, method and medium
|
US6969448B1
(en)
|
1999-12-30 |
2005-11-29 |
Cypress Semiconductor Corp. |
Method for forming a metallization structure in an integrated circuit
|
US6455427B1
(en)
|
1999-12-30 |
2002-09-24 |
Cypress Semiconductor Corp. |
Method for forming void-free metallization in an integrated circuit
|
US6627056B2
(en)
*
|
2000-02-16 |
2003-09-30 |
Applied Materials, Inc. |
Method and apparatus for ionized plasma deposition
|
US6420263B1
(en)
*
|
2000-02-28 |
2002-07-16 |
International Business Machines Corporation |
Method for controlling extrusions in aluminum metal lines and the device formed therefrom
|
US6952656B1
(en)
|
2000-04-28 |
2005-10-04 |
Applied Materials, Inc. |
Wafer fabrication data acquisition and management systems
|
US6708074B1
(en)
|
2000-08-11 |
2004-03-16 |
Applied Materials, Inc. |
Generic interface builder
|
US7188142B2
(en)
*
|
2000-11-30 |
2007-03-06 |
Applied Materials, Inc. |
Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
|
US20020128735A1
(en)
*
|
2001-03-08 |
2002-09-12 |
Hawkins Parris C.M. |
Dynamic and extensible task guide
|
US20020138321A1
(en)
*
|
2001-03-20 |
2002-09-26 |
Applied Materials, Inc. |
Fault tolerant and automated computer software workflow
|
US6910947B2
(en)
|
2001-06-19 |
2005-06-28 |
Applied Materials, Inc. |
Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
|
US7201936B2
(en)
*
|
2001-06-19 |
2007-04-10 |
Applied Materials, Inc. |
Method of feedback control of sub-atmospheric chemical vapor deposition processes
|
US7082345B2
(en)
*
|
2001-06-19 |
2006-07-25 |
Applied Materials, Inc. |
Method, system and medium for process control for the matching of tools, chambers and/or other semiconductor-related entities
|
US7698012B2
(en)
|
2001-06-19 |
2010-04-13 |
Applied Materials, Inc. |
Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
|
US7047099B2
(en)
|
2001-06-19 |
2006-05-16 |
Applied Materials Inc. |
Integrating tool, module, and fab level control
|
US7101799B2
(en)
*
|
2001-06-19 |
2006-09-05 |
Applied Materials, Inc. |
Feedforward and feedback control for conditioning of chemical mechanical polishing pad
|
US6913938B2
(en)
*
|
2001-06-19 |
2005-07-05 |
Applied Materials, Inc. |
Feedback control of plasma-enhanced chemical vapor deposition processes
|
US7160739B2
(en)
*
|
2001-06-19 |
2007-01-09 |
Applied Materials, Inc. |
Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
|
US7337019B2
(en)
*
|
2001-07-16 |
2008-02-26 |
Applied Materials, Inc. |
Integration of fault detection with run-to-run control
|
US7225047B2
(en)
*
|
2002-03-19 |
2007-05-29 |
Applied Materials, Inc. |
Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
|
US20030199112A1
(en)
*
|
2002-03-22 |
2003-10-23 |
Applied Materials, Inc. |
Copper wiring module control
|
EP1546828A1
(en)
*
|
2002-08-01 |
2005-06-29 |
Applied Materials, Inc. |
Method, system, and medium for handling misrepresentative metrology data within an advanced process control system
|
US7504006B2
(en)
*
|
2002-08-01 |
2009-03-17 |
Applied Materials, Inc. |
Self-ionized and capacitively-coupled plasma for sputtering and resputtering
|
CN1720490B
(zh)
*
|
2002-11-15 |
2010-12-08 |
应用材料有限公司 |
用于控制具有多变量输入参数的制造工艺的方法和系统
|
US6794282B2
(en)
*
|
2002-11-27 |
2004-09-21 |
Infineon Technologies Ag |
Three layer aluminum deposition process for high aspect ratio CL contacts
|
US7333871B2
(en)
*
|
2003-01-21 |
2008-02-19 |
Applied Materials, Inc. |
Automated design and execution of experiments with integrated model creation for semiconductor manufacturing tools
|
DE10308968B4
(de)
*
|
2003-02-28 |
2006-09-14 |
Advanced Micro Devices, Inc., Sunnyvale |
Verfahren zur Herstellung einer leitenden Barrierenschicht mit verbesserter Bedeckung innerhalb kritischer Öffnungen
|
US7205228B2
(en)
*
|
2003-06-03 |
2007-04-17 |
Applied Materials, Inc. |
Selective metal encapsulation schemes
|
US20050014299A1
(en)
*
|
2003-07-15 |
2005-01-20 |
Applied Materials, Inc. |
Control of metal resistance in semiconductor products via integrated metrology
|
US7354332B2
(en)
*
|
2003-08-04 |
2008-04-08 |
Applied Materials, Inc. |
Technique for process-qualifying a semiconductor manufacturing tool using metrology data
|
US7356377B2
(en)
*
|
2004-01-29 |
2008-04-08 |
Applied Materials, Inc. |
System, method, and medium for monitoring performance of an advanced process control system
|
US20080264340A1
(en)
*
|
2004-04-12 |
2008-10-30 |
Novellus Systems, Inc. |
Moving interleaved sputter chamber shields
|
US7096085B2
(en)
*
|
2004-05-28 |
2006-08-22 |
Applied Materials |
Process control by distinguishing a white noise component of a process variance
|
US6961626B1
(en)
*
|
2004-05-28 |
2005-11-01 |
Applied Materials, Inc |
Dynamic offset and feedback threshold
|
US7378002B2
(en)
|
2005-08-23 |
2008-05-27 |
Applied Materials, Inc. |
Aluminum sputtering while biasing wafer
|
US8156892B2
(en)
*
|
2008-05-19 |
2012-04-17 |
Novellus Systems, Inc. |
Edge profiling for process chamber shields
|
US9181619B2
(en)
*
|
2010-02-26 |
2015-11-10 |
Fujifilm Corporation |
Physical vapor deposition with heat diffuser
|
US20110217465A1
(en)
*
|
2010-03-08 |
2011-09-08 |
Novellus Systems Inc. |
Shields for substrate processing systems
|
EP2599115B1
(en)
|
2010-07-27 |
2015-02-25 |
TEL Solar AG |
Heating arrangement and method for heating substrates
|
US20140120711A1
(en)
*
|
2012-10-26 |
2014-05-01 |
United Microelectronics Corp. |
Method of forming metal gate
|
US10354871B2
(en)
*
|
2017-09-11 |
2019-07-16 |
General Electric Company |
Sputtering system and method for forming a metal layer on a semiconductor device
|