ES2093822T3 - Dispositivo de silicio electroluminiscente. - Google Patents
Dispositivo de silicio electroluminiscente.Info
- Publication number
- ES2093822T3 ES2093822T3 ES92907005T ES92907005T ES2093822T3 ES 2093822 T3 ES2093822 T3 ES 2093822T3 ES 92907005 T ES92907005 T ES 92907005T ES 92907005 T ES92907005 T ES 92907005T ES 2093822 T3 ES2093822 T3 ES 2093822T3
- Authority
- ES
- Spain
- Prior art keywords
- silicon
- layer
- pct
- quantum wires
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 7
- 229910052710 silicon Inorganic materials 0.000 title abstract 5
- 239000010703 silicon Substances 0.000 title abstract 5
- 239000004020 conductor Substances 0.000 abstract 3
- 238000002161 passivation Methods 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 239000003792 electrolyte Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000005424 photoluminescence Methods 0.000 abstract 1
- 239000011148 porous material Substances 0.000 abstract 1
- 229910021426 porous silicon Inorganic materials 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
- H01L33/346—Materials of the light emitting region containing only elements of Group IV of the Periodic Table containing porous silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Theoretical Computer Science (AREA)
- Biophysics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
UN DISPOSITIVO (10) DE SILICIO ELECTROLUMINISCENTE INCLUYE UNA ESTRUCTURA (12) DE SILICIO LA CUAL COMPRENDE UNA CAPA (14) DE SILICIO HOMOGENEO Y UNA CAPA (16) DE SILICIO POROSO. LA CAPA (16) DE SILICIO POROSO TIENE POROS (20) INTERCALADOS LOS CUALES DEFINEN CONDUCTORES (18) CUANTICOS DE SILICIO. LOS CONDUCTORES (18) CUANTICOS TIENEN UNA CAPA (22) DE ESTABILIZACION SUPERFICIAL. LA CAPA (16) POROSA EXHIBE FOTOLUMINISCENCIA BAJO IRRADIACION ULTRA VIOLETA. LA CAPA POROSA (16) ESTA SATURADA POR UN MATERIAL CONDUCTOR TAL COMO UN ELECTROLITO (24) O UN METAL (48). EL MATERIAL CONDUCTOR (24) ASEGURA QUE UN CAMINO DE CORRIENTE ELECTRICAMENTE CONTINUA SE EXTIENDE A TRAVES DE LA CAPA (16) POROSA; EL NO DEGRADA LA SUPERFICIE (22) DE ESTABILIZACION DEL CONDUCTOR CUANTICO SUFICIENTEMENTE COMO PARA QUE EL CONDUCTOR (18) CUANTICO NO PRODUZCA LUMINISCENCIA, E INJERTA PORTADORES MINORITARIOS DENTRO DEL CONDUCTOR CUANTICO. UN ELECTRODO (26) SE CONECTA EL MATERIAL CONDUCTOR (24) Y LA CAPA DE SILICIO HOMOGENEO TIENE CONEXION (28) OHMICA. CUANDO SE POLARIZA EL ELECTRODO (26) ES EL ANODO Y LA ESTRUCTURA (12) DE SILICIO ES EL CATODO. ENTONCES SE OBSERVA LA ELECTROLUMINISCENCIA EN LA REGION VISIBLE DEL ESPECTRO.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB919108176A GB9108176D0 (en) | 1991-04-17 | 1991-04-17 | Electroluminescent silicon device |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2093822T3 true ES2093822T3 (es) | 1997-01-01 |
Family
ID=10693425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES92907005T Expired - Lifetime ES2093822T3 (es) | 1991-04-17 | 1992-03-25 | Dispositivo de silicio electroluminiscente. |
Country Status (11)
Country | Link |
---|---|
US (1) | US5561304A (es) |
EP (1) | EP0580618B1 (es) |
JP (1) | JP3014756B2 (es) |
KR (1) | KR100249747B1 (es) |
AT (1) | ATE145111T1 (es) |
CA (1) | CA2108559C (es) |
DE (1) | DE69215084T2 (es) |
DK (1) | DK0580618T3 (es) |
ES (1) | ES2093822T3 (es) |
GB (2) | GB9108176D0 (es) |
WO (1) | WO1992019084A1 (es) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9213824D0 (en) * | 1992-06-30 | 1992-08-12 | Isis Innovation | Light emitting devices |
DE4315075A1 (de) * | 1993-02-17 | 1994-11-10 | Fraunhofer Ges Forschung | Anordnung zur Plasmaerzeugung |
US5689603A (en) * | 1993-07-07 | 1997-11-18 | Huth; Gerald C. | Optically interactive nanostructure |
ES2095793B1 (es) * | 1994-01-18 | 1997-12-16 | Univ Madrid Autonoma | Metodo de formacion de estructuras luminiscentes de silicio poroso. |
FR2716748B1 (fr) * | 1994-02-25 | 1996-06-07 | France Telecom | Procédé de tapissage ou de remplissage par dépôt en phase gazeuse d'une structure en relief et application de ce procédé pour la fabrication d'éléments semi-conducteurs. |
GB2313479B (en) * | 1995-03-20 | 1999-10-20 | Secr Defence | Electroluminescent device comprising porous silicon |
GB2299204A (en) * | 1995-03-20 | 1996-09-25 | Secr Defence | Electroluminescent device |
EP0797258B1 (en) * | 1996-03-18 | 2011-07-20 | Sony Corporation | Method for making thin film semiconductor, solar cell, and light emitting diode |
WO2000026019A1 (en) * | 1998-11-02 | 2000-05-11 | Purdue Research Foundation | Functionalized porous silicon surfaces |
US6432724B1 (en) * | 1998-11-25 | 2002-08-13 | Micron Technology, Inc. | Buried ground plane for high performance system modules |
WO2000054309A1 (en) | 1999-03-09 | 2000-09-14 | The Scripps Research Institute | Improved desorption/ionization of analytes from porous light-absorbing semiconductor |
WO2002090465A1 (en) * | 2001-05-04 | 2002-11-14 | Elam-T Limited | Electroluminescent devices |
US6970239B2 (en) * | 2002-06-12 | 2005-11-29 | Intel Corporation | Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate |
US6989897B2 (en) * | 2002-06-12 | 2006-01-24 | Intel Corporation | Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate |
US7400395B2 (en) * | 2002-06-12 | 2008-07-15 | Intel Corporation | Metal coated nanocrystalline silicon as an active surface enhanced raman spectroscopy (SERS) substrate |
US7361313B2 (en) * | 2003-02-18 | 2008-04-22 | Intel Corporation | Methods for uniform metal impregnation into a nanoporous material |
JP4760005B2 (ja) * | 2004-12-17 | 2011-08-31 | ソニー株式会社 | 発光素子、発光素子の製造方法および表示装置 |
CN100347870C (zh) * | 2005-11-23 | 2007-11-07 | 天津大学 | 电致发光多孔硅材料的制备方法 |
JP2010505728A (ja) * | 2006-10-05 | 2010-02-25 | 日立化成工業株式会社 | 高配列、高アスペクト比、高密度のシリコンナノワイヤー及びその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3030542A (en) * | 1959-06-23 | 1962-04-17 | Westinghouse Electric Corp | Electroluminescent device |
US3082175A (en) * | 1959-11-09 | 1963-03-19 | Westinghouse Electric Corp | Method of improving electroluminescent phosphor |
US3621321A (en) * | 1969-10-28 | 1971-11-16 | Canadian Patents Dev | Electroluminescent device with light emitting aromatic, hydrocarbon material |
GB8927709D0 (en) * | 1989-12-07 | 1990-02-07 | Secretary Of The State For Def | Silicon quantum wires |
US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
US5324965A (en) * | 1993-03-26 | 1994-06-28 | The United States Of America As Represented By The Secretary Of The Army | Light emitting diode with electro-chemically etched porous silicon |
-
1991
- 1991-04-17 GB GB919108176A patent/GB9108176D0/en active Pending
-
1992
- 1992-03-25 WO PCT/GB1992/000547 patent/WO1992019084A1/en active IP Right Grant
- 1992-03-25 ES ES92907005T patent/ES2093822T3/es not_active Expired - Lifetime
- 1992-03-25 EP EP92907005A patent/EP0580618B1/en not_active Expired - Lifetime
- 1992-03-25 CA CA002108559A patent/CA2108559C/en not_active Expired - Fee Related
- 1992-03-25 DK DK92907005.0T patent/DK0580618T3/da active
- 1992-03-25 US US08/129,208 patent/US5561304A/en not_active Expired - Lifetime
- 1992-03-25 JP JP4506565A patent/JP3014756B2/ja not_active Expired - Fee Related
- 1992-03-25 DE DE69215084T patent/DE69215084T2/de not_active Expired - Fee Related
- 1992-03-25 AT AT92907005T patent/ATE145111T1/de not_active IP Right Cessation
- 1992-03-25 KR KR1019930703178A patent/KR100249747B1/ko not_active IP Right Cessation
-
1993
- 1993-08-19 GB GB9317309A patent/GB2268333B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
ATE145111T1 (de) | 1996-11-15 |
EP0580618A1 (en) | 1994-02-02 |
GB2268333A (en) | 1994-01-05 |
EP0580618B1 (en) | 1996-11-06 |
DE69215084D1 (de) | 1996-12-12 |
GB9108176D0 (en) | 1991-06-05 |
GB2268333B (en) | 1994-11-23 |
WO1992019084A1 (en) | 1992-10-29 |
JP3014756B2 (ja) | 2000-02-28 |
KR100249747B1 (ko) | 2000-04-01 |
DK0580618T3 (da) | 1996-11-25 |
CA2108559C (en) | 2002-02-19 |
DE69215084T2 (de) | 1997-03-27 |
US5561304A (en) | 1996-10-01 |
CA2108559A1 (en) | 1992-10-18 |
JPH06509212A (ja) | 1994-10-13 |
GB9317309D0 (en) | 1993-10-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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