DK0580618T3 - Elektroluminescent siliciumindretning - Google Patents

Elektroluminescent siliciumindretning

Info

Publication number
DK0580618T3
DK0580618T3 DK92907005.0T DK92907005T DK0580618T3 DK 0580618 T3 DK0580618 T3 DK 0580618T3 DK 92907005 T DK92907005 T DK 92907005T DK 0580618 T3 DK0580618 T3 DK 0580618T3
Authority
DK
Denmark
Prior art keywords
silicon
layer
pct
quantum wires
conductive material
Prior art date
Application number
DK92907005.0T
Other languages
English (en)
Inventor
Leigh Trevor Canham
Weng Yee Leong
Timothy Ingram Cox
Original Assignee
Secr Defence Brit
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Secr Defence Brit filed Critical Secr Defence Brit
Application granted granted Critical
Publication of DK0580618T3 publication Critical patent/DK0580618T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H01L33/346—Materials of the light emitting region containing only elements of Group IV of the Periodic Table containing porous silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Biophysics (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
DK92907005.0T 1991-04-17 1992-03-25 Elektroluminescent siliciumindretning DK0580618T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB919108176A GB9108176D0 (en) 1991-04-17 1991-04-17 Electroluminescent silicon device

Publications (1)

Publication Number Publication Date
DK0580618T3 true DK0580618T3 (da) 1996-11-25

Family

ID=10693425

Family Applications (1)

Application Number Title Priority Date Filing Date
DK92907005.0T DK0580618T3 (da) 1991-04-17 1992-03-25 Elektroluminescent siliciumindretning

Country Status (11)

Country Link
US (1) US5561304A (da)
EP (1) EP0580618B1 (da)
JP (1) JP3014756B2 (da)
KR (1) KR100249747B1 (da)
AT (1) ATE145111T1 (da)
CA (1) CA2108559C (da)
DE (1) DE69215084T2 (da)
DK (1) DK0580618T3 (da)
ES (1) ES2093822T3 (da)
GB (2) GB9108176D0 (da)
WO (1) WO1992019084A1 (da)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9213824D0 (en) * 1992-06-30 1992-08-12 Isis Innovation Light emitting devices
DE4315075A1 (de) * 1993-02-17 1994-11-10 Fraunhofer Ges Forschung Anordnung zur Plasmaerzeugung
US5689603A (en) * 1993-07-07 1997-11-18 Huth; Gerald C. Optically interactive nanostructure
ES2095793B1 (es) * 1994-01-18 1997-12-16 Univ Madrid Autonoma Metodo de formacion de estructuras luminiscentes de silicio poroso.
FR2716748B1 (fr) * 1994-02-25 1996-06-07 France Telecom Procédé de tapissage ou de remplissage par dépôt en phase gazeuse d'une structure en relief et application de ce procédé pour la fabrication d'éléments semi-conducteurs.
GB2299204A (en) 1995-03-20 1996-09-25 Secr Defence Electroluminescent device
GB2313479B (en) * 1995-03-20 1999-10-20 Secr Defence Electroluminescent device comprising porous silicon
EP0797258B1 (en) * 1996-03-18 2011-07-20 Sony Corporation Method for making thin film semiconductor, solar cell, and light emitting diode
WO2000026019A1 (en) * 1998-11-02 2000-05-11 Purdue Research Foundation Functionalized porous silicon surfaces
US6432724B1 (en) * 1998-11-25 2002-08-13 Micron Technology, Inc. Buried ground plane for high performance system modules
US6288390B1 (en) 1999-03-09 2001-09-11 Scripps Research Institute Desorption/ionization of analytes from porous light-absorbing semiconductor
WO2002090466A1 (en) * 2001-05-04 2002-11-14 Elam-T Limited Electroluminescent devices
US7400395B2 (en) * 2002-06-12 2008-07-15 Intel Corporation Metal coated nanocrystalline silicon as an active surface enhanced raman spectroscopy (SERS) substrate
US6970239B2 (en) * 2002-06-12 2005-11-29 Intel Corporation Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate
US7361313B2 (en) * 2003-02-18 2008-04-22 Intel Corporation Methods for uniform metal impregnation into a nanoporous material
US6989897B2 (en) * 2002-06-12 2006-01-24 Intel Corporation Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate
JP4760005B2 (ja) * 2004-12-17 2011-08-31 ソニー株式会社 発光素子、発光素子の製造方法および表示装置
CN100347870C (zh) * 2005-11-23 2007-11-07 天津大学 电致发光多孔硅材料的制备方法
WO2008045301A1 (en) * 2006-10-05 2008-04-17 Hitachi Chemical Co., Ltd. Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030542A (en) * 1959-06-23 1962-04-17 Westinghouse Electric Corp Electroluminescent device
US3082175A (en) * 1959-11-09 1963-03-19 Westinghouse Electric Corp Method of improving electroluminescent phosphor
US3621321A (en) * 1969-10-28 1971-11-16 Canadian Patents Dev Electroluminescent device with light emitting aromatic, hydrocarbon material
GB8927709D0 (en) * 1989-12-07 1990-02-07 Secretary Of The State For Def Silicon quantum wires
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5324965A (en) * 1993-03-26 1994-06-28 The United States Of America As Represented By The Secretary Of The Army Light emitting diode with electro-chemically etched porous silicon

Also Published As

Publication number Publication date
CA2108559A1 (en) 1992-10-18
DE69215084D1 (de) 1996-12-12
KR100249747B1 (ko) 2000-04-01
ES2093822T3 (es) 1997-01-01
US5561304A (en) 1996-10-01
WO1992019084A1 (en) 1992-10-29
GB2268333B (en) 1994-11-23
ATE145111T1 (de) 1996-11-15
GB9108176D0 (en) 1991-06-05
JP3014756B2 (ja) 2000-02-28
GB2268333A (en) 1994-01-05
EP0580618B1 (en) 1996-11-06
GB9317309D0 (en) 1993-10-27
CA2108559C (en) 2002-02-19
DE69215084T2 (de) 1997-03-27
EP0580618A1 (en) 1994-02-02
JPH06509212A (ja) 1994-10-13

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