ES2092250T3 - Procedimiento para formar un deposito que contiene silicio en la superficie de un sustrato metalico, y procedimiento de tratamiento anticorrosion. - Google Patents

Procedimiento para formar un deposito que contiene silicio en la superficie de un sustrato metalico, y procedimiento de tratamiento anticorrosion.

Info

Publication number
ES2092250T3
ES2092250T3 ES93401396T ES93401396T ES2092250T3 ES 2092250 T3 ES2092250 T3 ES 2092250T3 ES 93401396 T ES93401396 T ES 93401396T ES 93401396 T ES93401396 T ES 93401396T ES 2092250 T3 ES2092250 T3 ES 2092250T3
Authority
ES
Spain
Prior art keywords
procedure
forming
containing silicon
anticorrosion treatment
tank containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93401396T
Other languages
English (en)
Inventor
Frank Slootman
Pascal Bouard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Original Assignee
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide SA, LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical Air Liquide SA
Application granted granted Critical
Publication of ES2092250T3 publication Critical patent/ES2092250T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • C23C16/0227Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • C23C16/402Silicon dioxide
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

LA INVENCION CONCIERNE A UN PROCESO PARA FORMAR UN DEPOSITO CONTENIENDO SILICIO EN LA SUPERFICIE DE UN SUBSTRATO METALICO SEGUN EL CUAL SE PONE EN MARCHA, CONCOMITANTEMENTE O SUCESIVAMENTE, LAS ETAPAS SIGUIENTES: (1) LA SUMISION DE LA DICHA SUPERFICIE A UNA DESCARGA ELECTRICA CON BARRERA DIELECTRICA; (2) LA EXPOSICION DE LA DICHA SUPERFICIE A UNA ATMOSFERA QUE COMPORTA UN COMPUESTO DE SILICIO EN EL ESTADO GASEOSO, LAS ETAPAS (1) Y (2) SON EFECTUADAS A UNA PRESION SUPERIOR A 10.000 PA. LA INVENCION CONCIERNE IGUALMENTE A UN PROCESO DE TRATAMIENTO ANTICORROSION DE SUBSTRATO METALICO, ASI COMO UN SOPORTE POLIMERO METALIZADO.
ES93401396T 1992-06-17 1993-06-02 Procedimiento para formar un deposito que contiene silicio en la superficie de un sustrato metalico, y procedimiento de tratamiento anticorrosion. Expired - Lifetime ES2092250T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9207377A FR2692598B1 (fr) 1992-06-17 1992-06-17 Procédé de dépôt d'un film contenant du silicium à la surface d'un substrat métallique et procédé de traitement anti-corrosion.

Publications (1)

Publication Number Publication Date
ES2092250T3 true ES2092250T3 (es) 1996-11-16

Family

ID=9430856

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93401396T Expired - Lifetime ES2092250T3 (es) 1992-06-17 1993-06-02 Procedimiento para formar un deposito que contiene silicio en la superficie de un sustrato metalico, y procedimiento de tratamiento anticorrosion.

Country Status (9)

Country Link
US (1) US5523124A (es)
EP (1) EP0577447B1 (es)
JP (1) JP3403219B2 (es)
AT (1) ATE143061T1 (es)
AU (1) AU666546B2 (es)
CA (1) CA2098436A1 (es)
DE (1) DE69304819T2 (es)
ES (1) ES2092250T3 (es)
FR (1) FR2692598B1 (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2714917B1 (fr) * 1994-01-07 1996-03-01 Pechiney Recherche Bande à base d'aluminium revêtue, résistant à la corrosion et déformable, procédé d'obtention et applications.
US5900317A (en) * 1996-09-13 1999-05-04 Minnesota Mining & Manufacturing Company Flame-treating process
US6083355A (en) * 1997-07-14 2000-07-04 The University Of Tennessee Research Corporation Electrodes for plasma treater systems
US6106659A (en) * 1997-07-14 2000-08-22 The University Of Tennessee Research Corporation Treater systems and methods for generating moderate-to-high-pressure plasma discharges for treating materials and related treated materials
NL1009956C2 (nl) * 1998-08-27 2000-02-29 Tno Werkwijze voor het aanbrengen van een bekleding op een substraat.
US6054018A (en) * 1998-08-28 2000-04-25 Wisconsin Alumni Research Foundation Outside chamber sealing roller system for surface treatment gas reactors
FR2782837B1 (fr) * 1998-08-28 2000-09-29 Air Liquide Procede et dispositif de traitement de surface par plasma a pression atmospherique
US6082292A (en) * 1999-01-05 2000-07-04 Wisconsin Alumni Research Foundation Sealing roller system for surface treatment gas reactors
CA2399090A1 (en) * 2000-02-04 2001-08-09 Anna Nihlstrand Fibrous structure and absorbent article comprising said fibrous structure
KR20010088089A (ko) * 2000-03-10 2001-09-26 구자홍 플라즈마 중합처리 시스템의 친수성 향상 방법
EP1582270A1 (en) * 2004-03-31 2005-10-05 Vlaamse Instelling voor Technologisch Onderzoek Method and apparatus for coating a substrate using dielectric barrier discharge
US20050238816A1 (en) * 2004-04-23 2005-10-27 Li Hou Method and apparatus of depositing low temperature inorganic films on plastic substrates
CN101184615A (zh) * 2005-03-24 2008-05-21 3M创新有限公司 耐腐蚀性金属化膜和其制造方法
EP1866154A1 (en) * 2005-03-24 2007-12-19 3M Innovative Properties Company Metallized films and articles containing the same
DE102005028121A1 (de) 2005-06-10 2006-12-14 Decoma (Germany) Gmbh Verfahren zum Behandeln einer Oberfläche
WO2013110963A1 (fr) 2012-01-24 2013-08-01 Arcelormittal Investigacion Y Desarrollo Sl Appareil et procédé de revêtement d'un substrat métallique en défilement

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE275264C (es) *
US3655438A (en) * 1969-10-20 1972-04-11 Int Standard Electric Corp Method of forming silicon oxide coatings in an electric discharge
JPS5821814B2 (ja) * 1975-11-08 1983-05-04 松下電器産業株式会社 ケンカイガタコンデンサ
GB2104054B (en) * 1981-08-11 1984-11-14 British Petroleum Co Plc Protective silica coatings
GB2107360B (en) * 1981-10-12 1985-09-25 Central Electr Generat Board Depositing silicon on metal
DE3379816D1 (en) * 1982-06-18 1989-06-08 Kempten Elektroschmelz Gmbh Process for the stable deposition of metallic layers on a plastic foil, and their utilization in self-healing capacitors
US4603056A (en) * 1985-04-25 1986-07-29 International Business Machines Corporation Surface treatment of a molybdenum screening mask
JPS62130503A (ja) * 1985-11-30 1987-06-12 本州製紙株式会社 メタライズドコンデンサ用の亜鉛蒸着基材ならびにその製造法
JPS62156943A (ja) * 1985-12-28 1987-07-11 東洋紡績株式会社 蒸着層内蔵型の複層ガスバリヤ−性フイルム又はシ−ト及びその製造方法
US4792460A (en) * 1986-07-15 1988-12-20 Electric Power Research Institute, Inc. Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium
JPS6369958A (ja) * 1986-09-10 1988-03-30 Daiichi Jitsugyo Kk 溶射プロセスの前処理方法
US4869929A (en) * 1987-11-10 1989-09-26 Air Products And Chemicals, Inc. Process for preparing sic protective films on metallic or metal impregnated substrates
DE68922244T2 (de) * 1988-06-06 1995-09-14 Japan Res Dev Corp Verfahren zur Durchführung einer Plasmareaktion bei Atmosphärendruck.
US5275665A (en) * 1988-06-06 1994-01-04 Research Development Corporation Of Japan Method and apparatus for causing plasma reaction under atmospheric pressure
US5079089A (en) * 1988-07-28 1992-01-07 Nippon Steel Corporation Multi ceramic layer-coated metal plate and process for manufacturing same
JP2811820B2 (ja) * 1989-10-30 1998-10-15 株式会社ブリヂストン シート状物の連続表面処理方法及び装置
US5185132A (en) * 1989-12-07 1993-02-09 Research Development Corporation Of Japan Atomspheric plasma reaction method and apparatus therefor
JP3014111B2 (ja) * 1990-02-01 2000-02-28 科学技術振興事業団 大気圧グロープラズマエッチング方法
IT1241922B (it) * 1990-03-09 1994-02-01 Eniricerche Spa Procedimento per realizzare rivestimenti di carburo di silicio
JPH04374A (ja) * 1990-04-16 1992-01-06 Mitsubishi Heavy Ind Ltd プラスチック基板表面の硬化保護膜製造方法
JP2640174B2 (ja) * 1990-10-30 1997-08-13 三菱電機株式会社 半導体装置およびその製造方法
JP3206095B2 (ja) * 1991-04-12 2001-09-04 株式会社ブリヂストン 表面処理方法及びその装置
JPH04337076A (ja) * 1991-05-14 1992-11-25 Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk 高圧力下でのプラズマ及びラジカルcvd法による高速成膜方法
JPH05258854A (ja) * 1992-03-16 1993-10-08 Matsushita Electric Ind Co Ltd 高周波加熱装置

Also Published As

Publication number Publication date
FR2692598A1 (fr) 1993-12-24
US5523124A (en) 1996-06-04
DE69304819D1 (de) 1996-10-24
FR2692598B1 (fr) 1995-02-10
EP0577447A1 (fr) 1994-01-05
CA2098436A1 (fr) 1993-12-18
ATE143061T1 (de) 1996-10-15
DE69304819T2 (de) 1997-01-30
EP0577447B1 (fr) 1996-09-18
AU666546B2 (en) 1996-02-15
AU4125093A (en) 1993-12-23
JPH0688240A (ja) 1994-03-29
JP3403219B2 (ja) 2003-05-06

Similar Documents

Publication Publication Date Title
ES2092250T3 (es) Procedimiento para formar un deposito que contiene silicio en la superficie de un sustrato metalico, y procedimiento de tratamiento anticorrosion.
TW358978B (en) Method to etch a destruction-area on a semiconductor substrate-edge as well as an etching equipment
TW253849B (es)
CA2091647A1 (en) Method for the surface treatment of a metal by atmospheric pressure plasma
GB2272995B (en) Method for making or treating a semiconductor
TW429481B (en) Process for treating semiconductor substrates and structures obtained by this process
TW283250B (en) Plasma enhanced chemical processing reactor and method
GB2322235A (en) Metals removal process
ES2075146T3 (es) Procedimiento de descomposicion inducida por plasma de silil-ciclobutanos para formar recubrimientos continuos de carburo de silicio amorfo.
GB2346898A (en) Deposition of a siloxane containing polymer
DE69418059D1 (de) Verfahren und vorrichtung zur herstellung angeregter gase
IL132165A (en) Article, method, and apparatus for electrochemical fabrication
EP0318395A3 (en) An apparatus for metal organic chemical vapor deposition and a method using the same
EP0589237A3 (en) Vacuum etching apparatus and method for processing its parts.
ES2117775T3 (es) Procedimiento y dispositivo de tratamiento con fundente, por via seca, de superficies metalicas antes de la soldadura o estañado.
DE69726444D1 (de) Verfahren und vorrichtung um die wachstumseigenschaften zu verbessern durch die benutzung von elektronenlawinen
MY120524A (en) Part or jig for gas carburizing furnace
FR2631346B1 (fr) Revetement protecteur multicouche pour substrat, procede de protection de substrat par depot par plasma d'un tel revetement, revetements obtenus et leurs applications
TW329017B (en) Method for forming dielectric film
TW374937B (en) Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers
MY118011A (en) Integrated circuit device and process for its manufacture
CA2317532A1 (en) Method and apparatus for aerating chemically-sterilized articles
GR3034871T3 (en) Method and apparatus for cleaning a metal substrate
CA2341608A1 (fr) Procede pour le depot sous vide d'un substrat courbe
PT95435A (pt) Processo de producao de uma pelicula depositada e de um dispositivo semicondutor

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 577447

Country of ref document: ES