ES2083864T3 - Disposicion de circuito para el accionamiento de un transistor de efecto de campo-mos. - Google Patents
Disposicion de circuito para el accionamiento de un transistor de efecto de campo-mos.Info
- Publication number
- ES2083864T3 ES2083864T3 ES93911430T ES93911430T ES2083864T3 ES 2083864 T3 ES2083864 T3 ES 2083864T3 ES 93911430 T ES93911430 T ES 93911430T ES 93911430 T ES93911430 T ES 93911430T ES 2083864 T3 ES2083864 T3 ES 2083864T3
- Authority
- ES
- Spain
- Prior art keywords
- transistor
- supplementary
- voltage
- connection
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0083—Converters characterised by their input or output configuration
- H02M1/009—Converters characterised by their input or output configuration having two or more independently controlled outputs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Electronic Switches (AREA)
Abstract
PARA EL CONTROL DE UN TRANSISTOR MOS DE EFECTO DE CAMPO COMO INTERRUPTOR DE TENSION EN UN CONVERTIDOR DE VOLTAJE DIRECTO, QUE TRABAJA DE ACUERDO CON EL PRINCIPIO DE VIBRADOR, UNA DISPOSICION DE CIRCUITO TIENE UN TRANSISTOR (T1) DE ENTRADA PARA EL ACCIONAMIENTO DE UNA FUENTE DE CORRIENTE EN EL LADO DE ENTRADA CON OSCILACION DE BAJO VOLTAJE, UN TRANSISTOR (T2) DE INVERSION DE FASE CONECTADO AGUAS ABAJO Y UNA ETAPA COMPLEMENTARIA FORMADA POR UN PRIMER Y SEGUNDO TRANSISTOR (T3, T4) SUPLEMENTARIO CON COLECTORES INTERCONECTADOS. SE AÑADE UN VOLTAJE AUXILIAR AL VOLTAJE DE ENTRADA A SER REGULADO. GRACIAS A LOS DIFERENTES UMBRALES DE CONEXION DE CORRIENTE PARA EL PRIMER TRANSISTOR (T3) SUPLEMENTARIO Y PARA EL TRANSISTOR (T2) INVERSOR DE FASE QUE ACCIONA EL SEGUNDO TRANSISTOR (T4) SUPLEMENTARIO, LA ETAPA COMPLEMENTARIA SE CONECTA CON SOLAPE. ADICIONALMENTE, SE CONECTA CON UN RETRASO DE CONEXION, DE TAL MODO QUE EL TIEMPO DE CONEXION DE UN COMPONENTE REGULADOR DE CONEXION CONECTADO EN SERIE PUEDE SERINCREMENTADO HASTA EL 100 %. LOS REQUERIMIENTOS DE CORRIENTE PROPIA DEL CIRCUITO SON DE ESTA FORMA MUY BAJOS.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4215042 | 1992-05-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2083864T3 true ES2083864T3 (es) | 1996-04-16 |
Family
ID=6458338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES93911430T Expired - Lifetime ES2083864T3 (es) | 1992-05-07 | 1993-05-03 | Disposicion de circuito para el accionamiento de un transistor de efecto de campo-mos. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5546043A (es) |
EP (1) | EP0639308B1 (es) |
JP (1) | JPH07506478A (es) |
KR (1) | KR950701469A (es) |
DE (1) | DE59301809D1 (es) |
ES (1) | ES2083864T3 (es) |
WO (1) | WO1993022835A1 (es) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5828261A (en) * | 1996-11-13 | 1998-10-27 | Caterpillar Inc. | Gate drive circuit that controls a power transistor in three states |
US5923210A (en) * | 1997-05-07 | 1999-07-13 | Caterpillar Inc. | High side driver circuit with diagnostic output |
US5903173A (en) * | 1997-05-12 | 1999-05-11 | Caterpillar Inc. | Low side driver circuit with diagnostic output |
US6211727B1 (en) * | 1998-02-26 | 2001-04-03 | Stmicroelectronics, Inc. | Circuit and method for intelligently regulating a supply voltage |
DE19914466C1 (de) * | 1999-03-30 | 2000-09-14 | Siemens Ag | Treiberstufe zum Schalten einer Last |
US6377088B1 (en) * | 2000-07-21 | 2002-04-23 | Semiconductor Components Industries Llc | Sharp transition push-pull drive circuit with switching signal input circuit |
EP1783910B1 (de) * | 2005-11-07 | 2012-10-31 | Bosch Rexroth AG | Schaltungsanordnung und ein Verfahren zur galvanisch getrennten Ansteuerung eines Halbleiterschalters |
DE102005055832A1 (de) * | 2005-11-23 | 2007-05-24 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Schaltungsanordnung und Verfahren zum Ansteuern eines elektronischen Bauelements mit einem Ausgangssignal eines Mikroprozessors |
DE202006002762U1 (de) * | 2006-02-21 | 2006-05-04 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Schaltung zum Schalten eines spannungsgesteuerten Transistors |
CN101222196A (zh) * | 2007-01-08 | 2008-07-16 | 鸿富锦精密工业(深圳)有限公司 | 风扇驱动电路 |
EP2001130B1 (en) * | 2007-06-05 | 2012-01-25 | Saab Ab | Gate driver circuit for a monolithic microwave integrated circuit power converter |
US8228112B2 (en) * | 2007-07-13 | 2012-07-24 | International Business Machines Corporation | Switch with reduced insertion loss |
US8618785B2 (en) * | 2009-12-23 | 2013-12-31 | Marvell World Trade Ltd. | Start-up supply |
TW201210021A (en) * | 2010-08-31 | 2012-03-01 | Hon Hai Prec Ind Co Ltd | MOSFET element |
US8742735B2 (en) | 2011-05-16 | 2014-06-03 | Marvell World Trade Ltd. | High-voltage startup circuit |
EP2710724A2 (en) | 2011-05-16 | 2014-03-26 | Marvell World Trade Ltd. | High-voltage startup circuit |
FR3043287B1 (fr) * | 2015-10-28 | 2017-12-22 | Valeo Systemes De Controle Moteur | Dispositif de commande pour transistors |
EP3316463A1 (de) * | 2016-10-27 | 2018-05-02 | Siemens Aktiengesellschaft | Ändern eines schaltzustands einer schalt-halbbrücke |
CN107222177B (zh) * | 2017-05-08 | 2020-06-16 | 西安电子工程研究所 | 一种放大器漏极电源电压切换电路 |
US11038502B1 (en) | 2020-03-23 | 2021-06-15 | Texas Instruments Incorporated | Methods, apparatus, and systems to drive a transistor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3654490A (en) * | 1970-06-17 | 1972-04-04 | Signetics Corp | Gate circuit with ttl input and complimentary outputs |
US4940906A (en) * | 1988-08-08 | 1990-07-10 | Zdzislaw Gulczynski | Power switch driver |
US4859927A (en) * | 1988-10-28 | 1989-08-22 | Fisher Scientific Company | Power supply with improved switching regulator |
DE59207678D1 (de) * | 1992-06-05 | 1997-01-23 | Siemens Ag | Ansteuerschaltung für einen Leistungs-FET mit sourceseitiger Last |
DE59308057D1 (de) * | 1992-08-04 | 1998-03-05 | Siemens Ag | Ansteuerschaltung für einen Leistungs-MOSFET mit sourceseitiger Last |
US5416361A (en) * | 1993-09-02 | 1995-05-16 | At&T Corp. | Low dissipation snubber for switching power transistor |
US5376831A (en) * | 1993-09-24 | 1994-12-27 | International Business Machines Corporation | Power switch circuit providing linear voltage rise |
EP0666703A1 (en) * | 1994-02-08 | 1995-08-09 | HUANG, Wen-Liang | Power transistor driving circuit of electromagnetic induction heating device |
-
1993
- 1993-05-03 WO PCT/DE1993/000386 patent/WO1993022835A1/de active IP Right Grant
- 1993-05-03 EP EP93911430A patent/EP0639308B1/de not_active Expired - Lifetime
- 1993-05-03 ES ES93911430T patent/ES2083864T3/es not_active Expired - Lifetime
- 1993-05-03 KR KR1019940703960A patent/KR950701469A/ko not_active Application Discontinuation
- 1993-05-03 DE DE59301809T patent/DE59301809D1/de not_active Expired - Fee Related
- 1993-05-03 US US08/325,301 patent/US5546043A/en not_active Expired - Fee Related
- 1993-05-03 JP JP5518838A patent/JPH07506478A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR950701469A (ko) | 1995-03-23 |
WO1993022835A1 (de) | 1993-11-11 |
DE59301809D1 (de) | 1996-04-11 |
JPH07506478A (ja) | 1995-07-13 |
EP0639308A1 (de) | 1995-02-22 |
US5546043A (en) | 1996-08-13 |
EP0639308B1 (de) | 1996-03-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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