ES2080131T3 - Substrato transparente electroconductor de dos capas de oxidos metalicos, util particularmente en dispositivos optoelectronicos. - Google Patents

Substrato transparente electroconductor de dos capas de oxidos metalicos, util particularmente en dispositivos optoelectronicos.

Info

Publication number
ES2080131T3
ES2080131T3 ES90400330T ES90400330T ES2080131T3 ES 2080131 T3 ES2080131 T3 ES 2080131T3 ES 90400330 T ES90400330 T ES 90400330T ES 90400330 T ES90400330 T ES 90400330T ES 2080131 T3 ES2080131 T3 ES 2080131T3
Authority
ES
Spain
Prior art keywords
substrate
optoelectronic devices
layers
particularly useful
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90400330T
Other languages
English (en)
Inventor
Kyuichi Shirado
Hideo Kawahara
Masaro Mizonou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Vitrage SA
Original Assignee
Saint Gobain Vitrage SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Vitrage SA filed Critical Saint Gobain Vitrage SA
Application granted granted Critical
Publication of ES2080131T3 publication Critical patent/ES2080131T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Surface Treatment Of Glass (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

EL INVENTO SE REFIERE A LAMINAS DE CRISTAL QUE LLEVAN CAPAS DE OXIDOS METALICOS TRANSPARENTES. EL SUBSTRATO, SEGUN EL INVENTO, CONSTA DE UN SOPORTE DE VIDRIO, UNA PRIMERA CAPA, DENOMINADA SUBCAPA, TRANSPARENTE, ELECTROCONDUCTORA DE OXIDO METALICO Y UNA SEGUNDA CAPA TRANSPARENTE, DENOMINADA SOBRECAPA, CUYO COMPONENTE PRINCIPAL ES EL OXIDO DE ESTAÑO, NO CONSTANDO PRACTICAMENTE DE FLUOR Y CUYO CONTENIDO EN CLORO ES INFERIOR AL 0,1% EN PESO. APLICACION EN DISPOSITIVOS OPTO-ELECTRONICOS
ES90400330T 1989-02-08 1990-02-07 Substrato transparente electroconductor de dos capas de oxidos metalicos, util particularmente en dispositivos optoelectronicos. Expired - Lifetime ES2080131T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1029373A JPH02210715A (ja) 1989-02-08 1989-02-08 二層構造を有する透明導電基体

Publications (1)

Publication Number Publication Date
ES2080131T3 true ES2080131T3 (es) 1996-02-01

Family

ID=12274343

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90400330T Expired - Lifetime ES2080131T3 (es) 1989-02-08 1990-02-07 Substrato transparente electroconductor de dos capas de oxidos metalicos, util particularmente en dispositivos optoelectronicos.

Country Status (6)

Country Link
EP (1) EP0382632B1 (es)
JP (1) JPH02210715A (es)
AT (1) ATE129094T1 (es)
DE (1) DE69022862T2 (es)
DK (1) DK0382632T3 (es)
ES (1) ES2080131T3 (es)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397920A (en) * 1994-03-24 1995-03-14 Minnesota Mining And Manufacturing Company Light transmissive, electrically-conductive, oxide film and methods of production
JP4516657B2 (ja) * 1999-06-18 2010-08-04 日本板硝子株式会社 光電変換装置用基板とその製造方法、およびこれを用いた光電変換装置
WO2001026161A1 (fr) * 1999-10-05 2001-04-12 Matsushita Battery Industrial Co., Ltd. Pile solaire a compose semiconducteur et procede de fabrication
US7449220B2 (en) 2004-04-30 2008-11-11 Oc Oerlikon Blazers Ag Method for manufacturing a plate-shaped workpiece
CH706979B1 (en) * 2004-04-30 2014-03-31 Tel Solar Ag Method for producing a disc-shaped workpiece based on a dielectric substrate and vacuum treatment plant therefor.
DE102011005484A1 (de) 2011-03-14 2012-09-20 Evonik Goldschmidt Gmbh Zusammensetzung zur Optimierung von mineralischen Baustoffmassen
WO2022114026A1 (ja) * 2020-11-30 2022-06-02 Ａｇｃ株式会社 透明電極基板及び太陽電池
CN113929313B (zh) * 2021-10-18 2022-12-16 西安电子科技大学 一种三维导电纳米棒及其阵列电子传输层的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3280112D1 (de) * 1981-07-17 1990-03-15 Kanegafuchi Chemical Ind Amorpher halbleiter und photovoltaische einrichtung aus amorphem silizium.
JPS58204572A (ja) * 1982-05-24 1983-11-29 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS5958874A (ja) * 1982-09-29 1984-04-04 Toshiba Corp アモルフアスシリコン太陽電池
JPS62198169A (ja) * 1986-02-25 1987-09-01 Fuji Electric Corp Res & Dev Ltd 太陽電池
JPS62211966A (ja) * 1986-03-12 1987-09-17 Nippon Sheet Glass Co Ltd 透明導電膜付き基板
JPS62216108A (ja) * 1986-03-17 1987-09-22 日本板硝子株式会社 透明導電膜

Also Published As

Publication number Publication date
ATE129094T1 (de) 1995-10-15
JPH02210715A (ja) 1990-08-22
DK0382632T3 (da) 1996-03-04
EP0382632A2 (fr) 1990-08-16
EP0382632A3 (en) 1990-10-03
DE69022862T2 (de) 1996-05-23
EP0382632B1 (fr) 1995-10-11
DE69022862D1 (de) 1995-11-16

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