ES2077332T3 - Procedimiento para la obtencion de un conductor optico de ondas de capa delgada formada por tio2. - Google Patents

Procedimiento para la obtencion de un conductor optico de ondas de capa delgada formada por tio2.

Info

Publication number
ES2077332T3
ES2077332T3 ES92119239T ES92119239T ES2077332T3 ES 2077332 T3 ES2077332 T3 ES 2077332T3 ES 92119239 T ES92119239 T ES 92119239T ES 92119239 T ES92119239 T ES 92119239T ES 2077332 T3 ES2077332 T3 ES 2077332T3
Authority
ES
Spain
Prior art keywords
thin layer
tio2
procedure
obtaining
optical conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92119239T
Other languages
English (en)
Spanish (es)
Inventor
Martin Dr Heming
Roland Hochhaus
Jurgen Dr Otto
Volker Paquet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott AG
Original Assignee
Schott Glaswerke AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott Glaswerke AG filed Critical Schott Glaswerke AG
Application granted granted Critical
Publication of ES2077332T3 publication Critical patent/ES2077332T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Chemical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
ES92119239T 1991-11-15 1992-11-11 Procedimiento para la obtencion de un conductor optico de ondas de capa delgada formada por tio2. Expired - Lifetime ES2077332T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4137606A DE4137606C1 (enExample) 1991-11-15 1991-11-15

Publications (1)

Publication Number Publication Date
ES2077332T3 true ES2077332T3 (es) 1995-11-16

Family

ID=6444884

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92119239T Expired - Lifetime ES2077332T3 (es) 1991-11-15 1992-11-11 Procedimiento para la obtencion de un conductor optico de ondas de capa delgada formada por tio2.

Country Status (7)

Country Link
US (1) US5295220A (enExample)
EP (1) EP0542210B1 (enExample)
JP (1) JP2613533B2 (enExample)
AT (1) ATE128774T1 (enExample)
CA (1) CA2082853C (enExample)
DE (2) DE4137606C1 (enExample)
ES (1) ES2077332T3 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0615147B1 (en) * 1992-01-16 1998-08-05 Texas Instruments Incorporated Micromechanical deformable mirror device (DMD)
DE4228853C2 (de) * 1991-09-18 1993-10-21 Schott Glaswerke Optischer Wellenleiter mit einem planaren oder nur geringfügig gewölbten Substrat und Verfahren zu dessen Herstellung sowie Verwendung eines solchen
CH686747A5 (de) 1993-04-01 1996-06-14 Balzers Hochvakuum Optisches Schichtmaterial.
WO1995026427A1 (de) * 1994-03-29 1995-10-05 Schott Glaswerke Pcvd-verfahren und vorrichtung zur beschichtung von gewölbten substraten
DE4445427C2 (de) * 1994-12-20 1997-04-30 Schott Glaswerke Plasma-CVD-Verfahren zur Herstellung einer Gradientenschicht
JPH0978228A (ja) * 1995-09-18 1997-03-25 Itochu Fine Chem Kk 薄膜樹脂マトリックスの製造方法
DE19634795C2 (de) * 1996-08-29 1999-11-04 Schott Glas Plasma-CVD-Anlage mit einem Array von Mikrowellen-Plasmaelektroden und Plasma-CVD-Verfahren
US6994837B2 (en) * 2001-04-24 2006-02-07 Tekna Plasma Systems, Inc. Plasma synthesis of metal oxide nanopowder and apparatus therefor
US6614977B2 (en) 2001-07-12 2003-09-02 Little Optics, Inc. Use of deuterated gases for the vapor deposition of thin films for low-loss optical devices and waveguides
US7043133B2 (en) * 2001-07-12 2006-05-09 Little Optics, Inc. Silicon-oxycarbide high index contrast, low-loss optical waveguides and integrated thermo-optic devices
US20030110808A1 (en) * 2001-12-14 2003-06-19 Applied Materials Inc., A Delaware Corporation Method of manufacturing an optical core
US20030113085A1 (en) * 2001-12-14 2003-06-19 Applied Materials, Inc., A Delaware Corporation HDP-CVD film for uppercladding application in optical waveguides
KR100418908B1 (ko) * 2001-12-21 2004-02-14 엘지전자 주식회사 광도파로용 실리카막 제조방법
US6618537B2 (en) * 2002-01-14 2003-09-09 Applied Wdm, Inc. Optical waveguide structures and methods of fabrication
GB0217553D0 (en) * 2002-07-30 2002-09-11 Sheel David W Titania coatings by CVD at atmospheric pressure
US7080528B2 (en) * 2002-10-23 2006-07-25 Applied Materials, Inc. Method of forming a phosphorus doped optical core using a PECVD process
KR100813517B1 (ko) * 2006-10-27 2008-03-17 삼성전자주식회사 데이터 저장을 위한 강유전체 박막의 제조방법 및 이를이용한 강유전체 기록매체의 제조방법
DE102006053366A1 (de) * 2006-11-10 2008-05-15 Schott Ag Verfahren und Vorrichtung zur plasmaunterstützten chemischen Dampfphasenabscheidung
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3114652A (en) * 1960-04-15 1963-12-17 Alloyd Corp Vapor deposition process
JPS5924807A (ja) * 1982-07-31 1984-02-08 Nippon Telegr & Teleph Corp <Ntt> 光集積回路及びその製造方法
EP0103461B1 (en) * 1982-09-10 1988-11-17 Nippon Telegraph And Telephone Corporation Plasma deposition method and apparatus
GB8516537D0 (en) * 1985-06-29 1985-07-31 Standard Telephones Cables Ltd Pulsed plasma apparatus
GB2208656B (en) * 1985-06-29 1990-01-17 Stc Plc Pulsed radio frequency plasma apparatus and process
DE3641285A1 (de) * 1986-12-03 1988-06-09 Schott Glaswerke Verfahren zur messung von (alpha) und ss-strahlen geringer intensitaet
US5030574A (en) * 1987-06-19 1991-07-09 Vary Patricia S Plasmidless Lac strain of bacilus megaterium QM B1551
KR0145302B1 (ko) * 1988-04-28 1998-08-17 카자마 젠쥬 얇은 막의 형성방법
WO1990002964A1 (en) * 1988-09-05 1990-03-22 United States Department Of Energy Multilayer optical dielectric coating
DE3830249A1 (de) * 1988-09-06 1990-03-15 Schott Glaswerke Plasmaverfahren zum beschichten ebener substrate
US4873118A (en) * 1988-11-18 1989-10-10 Atlantic Richfield Company Oxygen glow treating of ZnO electrode for thin film silicon solar cell
JPH0318803A (ja) * 1989-06-16 1991-01-28 Hitachi Ltd 光導波路の製造方法および光導波路
JPH0328832A (ja) * 1989-06-27 1991-02-07 Asahi Glass Co Ltd 光波長変換素子
US5170291A (en) * 1989-12-19 1992-12-08 Leybold Aktiengesellschaft Coating, composed of an optically effective layer system, for substrates, whereby the layer system has a high anti-reflective effect, and method for manufacturing the coating
DE4008405C1 (enExample) * 1990-03-16 1991-07-11 Schott Glaswerke, 6500 Mainz, De
US5537853A (en) * 1994-09-12 1996-07-23 Ivac Corporation Air-in-line sensing apparatus
JPH10295749A (ja) * 1997-04-22 1998-11-10 Handei Network Internatl:Kk 歩行補助器

Also Published As

Publication number Publication date
CA2082853C (en) 2000-04-11
DE4137606C1 (enExample) 1992-07-30
DE59203896D1 (de) 1995-11-09
JP2613533B2 (ja) 1997-05-28
EP0542210B1 (de) 1995-10-04
ATE128774T1 (de) 1995-10-15
CA2082853A1 (en) 1993-05-16
US5295220A (en) 1994-03-15
EP0542210A1 (de) 1993-05-19
JPH05257024A (ja) 1993-10-08

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